Trimethylsilane

Abstract: Plasma-enhanced chemical vapor deposition (PECVD) of SiOx thin coatings on polymer surfaces yields tough hybrid materials with the gas barrier properties and transparency of glass. Combination of these properties makes these materials ideally suited for food packaging and biomedical device applications. In this study, we employ a Non-Parametric Response Surface Methods optimization to identify the Magnetron-PECVD conditions responsible for superlative SiOx barrier coatings on poly(ethylene terephthalate) (PET). Oxygen and water vapor permeances of optimized PET/SiOx composites produced by hexamethyldisiloxane and trimethylsilane have been measured as functions of temperature and are found to exhibit Arrhenius behavior. The thermal activation energy for water vapor permeation, unlike that for oxygen permeation, depends on barrier performance and increases by as much as 20 kJ/mol with an increase in barrier efficacy. Examination of these materials by phase-imaging atomic force microscopy and energy-filtered...

Abstract: The atomic layer deposition (ALD) of silicon dioxide (SiO2) was initially explored using a variety of silicon precursors with H2O as the oxidant. The silicon precursors were (N,N-dimethylamino)trimethylsilane) (CH3)3SiN(CH3)2, vinyltrimethoxysilane CH2═CHSi(OCH3)3, trivinylmethoxysilane (CH2═CH)3SiOCH3, tetrakis(dimethylamino)silane Si(N(CH3)2)4, and tris(dimethylamino)silane (TDMAS) SiH(N(CH3)2)3. TDMAS was determined to be the most effective of these precursors. However, additional studies determined that SiH* surface species from TDMAS were difficult to remove using only H2O. Subsequent studies utilized TDMAS and H2O2 as the oxidant and explored SiO2 ALD in the temperature range of 150−550 °C. The exposures required for the TDMAS and H2O2 surface reactions to reach completion were monitored using in situ FTIR spectroscopy. The FTIR vibrational spectra following the TDMAS exposures showed a loss of absorbance for O−H stretching vibrations and a gain of absorbance for C−Hx and Si−H stretching vibrations....

Abstract: Ultra low K nanoporous dielectric films may be formed by chemical vapor deposition of silicon-containing components and large non-silicon containing porogens having labile groups. In accordance with one embodiment of the present invention, a low K nanoporous film may be formed by the oxidative reaction between trimethylsilane (the silicon-containing component) and alpha-terpinene (the non-silicon containing component). In accordance with certain embodiments of the present invention, the oxidant can comprise other than molecular oxygen, for example water vapor introduced in-situ or remotely, and then exposed to RF energy to generate reactive ionic species.