Topic
Transceiver Device Component
About: Transceiver Device Component is a research topic. Over the lifetime, 2 publications have been published within this topic receiving 3 citations.
Papers
Patent•
26 Dec 2012
TL;DR: In this article, a wireless sensor network-based building group energy consumption monitoring device, which comprises an information input and display device, a data center component, at least one group of information acquisition and transceiver device component, an information acquisition/transceiver device electric power storage device and an external data center power supply.
Abstract: The utility model discloses a wireless sensor network-based building group energy consumption monitoring device, which comprises an information input and display device, a data center component, at least one group of information acquisition and transceiver device component, an information acquisition and transceiver device electric power storage device and an external data center power supply. The data center component comprises a data center data management module, a data center wireless module and a data center database, which are connected with a data center central processor respectively. The information acquisition and transceiver device component comprises a sensor, an information acquisition and transceiver device power management module, an information acquisition and transceiver device wireless module, an information acquisition and transceiver device database and an information acquisition and transceiver device data analysis module, which are connected with the information acquisition and transceiver device central processor respectively.
3 citations
Proceedings Article•
1 Nov 2014TL;DR: A 60 GHz transmitter front-end with built-in temperature sensor is designed and measured using 90nm digital CMOS process and delivers the best performance of +11dBm saturated output power with more than 13dB conversion gain using digitalCMOS process at 63 GHz.
Abstract: A 60 GHz transmitter front-end with built-in temperature sensor is designed and measured using 90nm digital CMOS process. This transmitter front-end integrated into a transceiver delivers the best performance of +11dBm saturated output power with more than 13dB conversion gain using digital CMOS process at 63 GHz. The built-in temperature sensor achieves a resolution better than 5°C in the temperature ranges of −10°C to +90°C.
Performance Metrics
| Year | Papers |
|---|---|
| 2014 | 1 |
| 2012 | 1 |