Synchronous dynamic random-access memory

Abstract: A computer system including synchronous dynamic random access memory (SDRAM) circuits that are capable of operating at different frequencies. A memory controller generates multiple clock signals with appropriate frequencies for use by the SDRAM memory devices. Asynchronous data queues are used to provide data transfers between the SDRAM memory and the processor or other bus master devices residing on a peripheral bus. Upon initialization, the computer system determines the type of SDRAM devices present and provides status information to the memory controller which, in response, generates appropriate clock signals to the SDRAM memory circuits.

Abstract: An output driver circuit is described which offers control and logic level adjustment for high speed data communications in a synchronous memory such as a synchronous dynamic random access memory (SDRAM). Level adjustment is obtained by resistive division between a termination resistor and controllable impedances between an output node and VDD and VSS power supplies. Control functions include slew rate modification of the signal at the output node, by sequentially turning on or off output transistors in response to a transition in an input signal. Different schemes of weighting the output transistors obtain different characteristics of the output signal. Load matching circuitry and voltage level forcing circuitry are described for improving high frequency operation.

Abstract: An output driver circuit offers control and logic level adjustment for high speed data communications in a synchronous memory such as a synchronous dynamic random access memory (SDRAM). Level adjustment is obtained by resistive division between a termination resistor and controllable impedances between an output node and VDD and VSS power supplies. Control functions include slew rate modification of the signal at the output node, by sequentially turning on or off output transistors in response to a transition in an input signal. Different schemes of weighting the output transistors obtains different characteristics of the output signal. Load matching circuitry and voltage level forcing circuitry is described for improving high frequency operation.

Abstract: A synchronous semiconductor memory device has improved layout and circuitry so as to provide rapid operation. Data paths between sub-arrays and memory cells and corresponding DQ pads are equalized to provide approximately equal line delays, transmission losses, etc. Input clock circuitry converts a “asynchronous” external clock signal and external clock enable signal to an internal “synchronous” clock signal. Input command signals are not stored in input registers, but instead are latched so as to provide such input signals rapidly downstream. Multiple redundant compare circuitry is provided to improve delays inherent in selecting between external or internal addresses. Input/output pull up circuitry is enabled during both read and write operations, but shortened during write operations. Two or more voltage pump circuits are employed that permit sharing of power therebetween to compensate for increased power demands to row lines, data output lines, etc.