Surface charge

Abstract: Characterizing the state of nanoparticles (such as size, surface charge, and degree of agglomeration) in aqueous suspensions and understanding the parameters that affect this state are imperative for toxicity investigations. In this study, the role of important factors such as solution ionic strength, pH, and particle surface chemistry that control nanoparticle dispersion was examined. The size and zeta potential of four TiO2 and three quantum dot samples dispersed in different solutions (including one physiological medium) were characterized. For 15 nm TiO2 dispersions, the increase of ionic strength from 0.001 M to 0.1 M led to a 50-fold increase in the hydrodynamic diameter, and the variation of pH resulted in significant change of particle surface charge and the hydrodynamic size. It was shown that both adsorbing multiply charged ions (e.g., pyrophosphate ions) onto the TiO2 nanoparticle surface and coating quantum dot nanocrystals with polymers (e.g., polyethylene glycol) suppressed agglomeration and stabilized the dispersions. DLVO theory was used to qualitatively understand nanoparticle dispersion stability. A methodology using different ultrasonication techniques (bath and probe) was developed to distinguish agglomerates from aggregates (strong bonds), and to estimate the extent of particle agglomeration. Probe ultrasonication performed better than bath ultrasonication in dispersing TiO2 agglomerates when the stabilizing agent sodium pyrophosphate was used. Commercially available Degussa P25 and in-house synthesized TiO2 nanoparticles were used to demonstrate identification of aggregated and agglomerated samples.

Abstract: The anisotropic etching behavior of single‐crystal silicon and the behavior of and in an ethylenediaminebased solution as well as in aqueous , , and were studied. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant composition. A correlation was found between the etch rates and their activation energies, with slowly etching crystal surfaces exhibiting higher activation energies and vice versa. For highly concentrated solutions, a decrease of the etch rate with the fourth power of the water concentration was observed. Based on these results, an electrochemical model is proposed, describing the anisotropic etching behavior of silicon in all alkaline solutions. In an oxidation step, four hydroxide ions react with one surface silicon atom, leading to the injection of four electrons into the conduction band. These electrons stay localized near the crystal surface due to the presence of a space charge layer. The reaction is accompanied by the breaking of the backbonds, which requires the thermal excitation of the respective surface state electrons into the conduction band. This step is considered to be rate limiting. In a reduction step, the injected electrons react with water molecules to form new hydroxide ions and hydrogen. It is assumed that these hydroxide ions generated at the silicon surface are consumed in the oxidation reaction rather than those from the bulk electrolyte, since the latter are kept away from the crystal by the repellent force of the negative surface charge. According to this model, monosilicic acid is formed as the primary dissolution product in all anisotropic silicon etchants. The anisotropic behavior is due to small differences of the energy levels of the backbond surface states as a function of the crystal orientation.