Topic
Substrate (electronics)
About: Substrate (electronics) is a research topic. Over the lifetime, 116158 publications have been published within this topic receiving 1370499 citations. The topic is also known as: wafer.
Papers published on a yearly basis
1 / 2
Papers
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Abstract: Graphene devices on standard SiO(2) substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2). These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures.
7,457 citations
TL;DR: In this paper, the depth profiles of amorphous TbFeCo films sputtered onto polycarbonate substrate were studied by X-ray photoelectron spectroscopy.
Abstract: The depth-profiles of amorphous TbFeCo films sputtered onto polycarbonate substrate were studied by X-ray photoelectron spectroscopy. Oxidized metals, oxides and hydroxides for example, and adsorbed impurities were found to exist mainly in the vicinity of the film surface and film/ substrate interface.
3,588 citations
TL;DR: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching, and introduces templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithographic, and block-copolymer masks.
Abstract: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.
1,918 citations
TL;DR: The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride.
Abstract: Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN).
1,806 citations
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
Abstract: We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating β-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 μm and a source–drain spacing of 20 μm. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (VGS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < −20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 μA at the off-state led to a high on/off drain current ratio of about 10 000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications.
1,601 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2022 | 51 |
| 2021 | 1,848 |
| 2020 | 3,083 |
| 2019 | 3,995 |
| 2018 | 4,239 |
| 2017 | 4,557 |