Topic
Suboxide
About: Suboxide is a research topic. Over the lifetime, 891 publications have been published within this topic receiving 17731 citations.
Papers published on a yearly basis
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Papers
TL;DR: The results show the importance of kinetic effects for the formation of well-defined suboxides during a reduction process and the activation of oxide catalysts.
Abstract: Time-resolved X-ray diffraction, X-ray absorption fine structure, and first-principles density functional calculations were used to investigate the reaction of CuO and Cu(2)O with H(2) in detail. The mechanism for the reduction of CuO is complex, involving an induction period and the embedding of H into the bulk of the oxide. The in-situ experiments show that, under a normal supply of hydrogen, CuO reduces directly to metallic Cu without formation of an intermediate or suboxide (i.e., no Cu(4)O(3) or Cu(2)O). The reduction of CuO is easier than the reduction of Cu(2)O. The apparent activation energy for the reduction of CuO is about 14.5 kcal/mol, while the value is 27.4 kcal/mol for Cu(2)O. During the reduction of CuO, the system can reach metastable states (MS) and react with hydrogen instead of forming Cu(2)O. To see the formation of Cu(2)O, one has to limit the flow of hydrogen, slowing the rate of reduction to allow a MS --> Cu(2)O transformation. These results show the importance of kinetic effects for the formation of well-defined suboxides during a reduction process and the activation of oxide catalysts.
548 citations
Patent•
27 Mar 1995
TL;DR: In this paper, an excellent PN junction was obtained by doping controlled metal oxide semiconductor with impurities, by controlling defects by introducing hydrogen or the like in the defects due to the excessive oxygen in a part of metal oxide, and controlling the carrier density and the conductivity type.
Abstract: PURPOSE: To obtain an excellent PN junction by doping controlled metal oxide semiconductor with impurities, by controlling defects by introducing hydrogen or the like in the defects due to the excessive oxygen in a part of metal oxide semiconductor of copper suboxide or the like, and controlling the carrier density and the conductivity type. CONSTITUTION: A metal oxide semiconductor 25 is metal semiconductor obtained by oxidizing metal films 24, 24'. An insulating protective film is formed on the surfaces of an insulating film 26 and the metal oxide semiconductor 25. By leading out electrodes connected with source drain electrodes 24, 24', a transistor having a gate electrode 22 is formed. The carrier density and the conductivity type are controlled by eliminating oxygen defects. The P-type conductivity or the N-type conductivity, and the resistivity can be controlled by impurity doping. In these cases, ion implantation method or the like can be applied. Thereby a thin film transistor of high mobility can be formed in a large area by low temperature treatment.
535 citations
TL;DR: This work reveals the essential first step for activating CO2 on a Cu surface, in particular, highlighting the importance of copper suboxide and the critical role of water, and provides fresh insights into how to design improved carbon dioxide reduction catalysts.
Abstract: A national priority is to convert CO2 into high-value chemical products such as liquid fuels. Because current electrocatalysts are not adequate, we aim to discover new catalysts by obtaining a detailed understanding of the initial steps of CO2 electroreduction on copper surfaces, the best current catalysts. Using ambient pressure X-ray photoelectron spectroscopy interpreted with quantum mechanical prediction of the structures and free energies, we show that the presence of a thin suboxide structure below the copper surface is essential to bind the CO2 in the physisorbed configuration at 298 K, and we show that this suboxide is essential for converting to the chemisorbed CO2 in the presence of water as the first step toward CO2 reduction products such as formate and CO. This optimum suboxide leads to both neutral and charged Cu surface sites, providing fresh insights into how to design improved carbon dioxide reduction catalysts.
411 citations
TL;DR: In this article, the role of the most stable bound native oxides GaOx (0.5≤x≤1.5) is investigated using monochromatic x-ray photoelectron spectroscopy.
Abstract: The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaOx (0.5≤x≤1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga2O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga2O3) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices.
277 citations
TL;DR: In this article, the positions of the Bi 4 f 7 2 and 4 f 5 2 peaks were considered and peak-fitting routines were used to find a linear relation between the binding energies and oxidation state.
237 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2025 | 12 |
| 2024 | 20 |
| 2023 | 29 |
| 2022 | 49 |
| 2021 | 28 |
| 2020 | 29 |