TL;DR: In this paper, an annealing procedure was proposed to improve the performance of iron-contaminated silicon solar cells, and the optimal transformation rate for string ribbon multicrystalline silicon was examined.
Abstract: In this work, we propose and demonstrate an annealing procedure designed to improve the performance of iron-contaminated silicon solar cells. Specifically, we put forward the idea that cells contaminated with iron should be annealed at appropriate times and temperatures to allow for the transformation from supersaturated point defects to distributed iron silicide precipitates. We examine the optimal transformation rate for string ribbon multicrystalline silicon and demonstrate that a 30min annealing can improve the efficiency of cells manufactured from low-purity feedstock.
TL;DR: A silicon ribbon growth method, String Ribbon, is discussed and compared with the two other vertical ribbon technologies as discussed by the authors, and manufacturing advances in production of 300 μm String Ribbon are described along with characterization of this ribbon, particularly dislocation distribution.
TL;DR: In this article, an improved understanding and hydrogenation of defects in ribbon materials contributed to the significant increase in bulk lifetime from 1 −5 μs to as high as 90 −100 μs during cell processing.
Abstract: Solar cell efficiencies of 18.2 and 17.8% were achieved on edge-defined film-fed grown and string ribbon multicrystalline silicon, respectively. Improved understanding and hydrogenation of defects in ribbon materials contributed to the significant increase in bulk lifetime from 1–5 μs to as high as 90–100 μs during cell processing. It was found that SiNx-induced defect hydrogenation in these ribbon materials takes place within one second at 740–750 °C. The bulk lifetime decreases at annealing temperatures above 750 °C or annealing times above one second due to the enhanced dissociation of the hydrogenated defects coupled with the decrease in hydrogen supply from the SiNx film deposited by plasma enhanced chemical vapor deposition.
TL;DR: The first solar cell made on the 100 μm-thick, p-type silicon ribbon (ρ=0.1 Ω cm) was 14.7% efficient as mentioned in this paper, with a V oc of 639 mV and a fill factor of 0.798 with a J sc of 28.8 mA/cm 2.
TL;DR: The edge stabilized ribbon (ESR) growth method is a shaped crystal growth technique wherein a ribbon is grown from the surface of the melt and the edge positions are determined by capillary attachment to wetted strings which pass up through the melt as discussed by the authors.