TL;DR: This result has paved the way towards portable three-dimensional maskless laser direct writing with resolution fully comparable to electron beam lithography with dependence of the feature size and the two-line resolution in a newly developed two-photon absorption resin with high mechanical strength.
Abstract: The current nanofabrication techniques including electron beam lithography provide fabrication resolution in the nanometre range. The major limitation of these techniques is their incapability of arbitrary three-dimensional nanofabrication. This has stimulated the rapid development of far-field three-dimensional optical beam lithography where a laser beam is focused for maskless direct writing. However, the diffraction nature of light is a barrier for achieving nanometre feature and resolution in optical beam lithography. Here we report on three-dimensional optical beam lithography with 9 nm feature size and 52 nm two-line resolution in a newly developed two-photon absorption resin with high mechanical strength. The revealed dependence of the feature size and the two-line resolution confirms that they can reach deep sub-diffraction scale but are limited by the mechanical strength of the new resin. Our result has paved the way towards portable three-dimensional maskless laser direct writing with resolution fully comparable to electron beam lithography.
TL;DR: In this paper, the recent development of the electron beam lithography technique is reviewed with an emphasis on fabricating devices at the nanometer scale, and future trends in this technique are discussed.
Abstract: Miniaturization is the central theme in modern fabrication technology. Many of the components used in modern products are getting smaller and smaller. In this paper, the recent development of the electron beam lithography technique is reviewed with an emphasis on fabricating devices at the nanometer scale. Because of its very short wavelength and reasonable energy density characteristics, e-beam lithography has the ability to fabricate patterns having nanometer feature sizes. As a result, many nanoscale devices have been successfully fabricated by this technique. Following an introduction of this technique, recent developments in processing, tooling, resist, and pattern controlling are separately examined and discussed. Examples of nanodevices made by several different e-beam lithographic schemes are given, to illustrate the versatility and advancement of the e-beam lithography technique. Finally, future trends in this technique are discussed.
TL;DR: The recent developments on large-scale, multiple-functional-layer metamaterials are discussed in detail, and alternative methods for 3D fabrication of complex structures are mentioned.
TL;DR: In this article, major micro-and nanolithography techniques and their applications from commercial micro devices to emerging applications in nanoscale science and engineering are reviewed and summarized into four major areas: electronics and microsystems, medical and biotech, optics and photonics, and environment and energy harvesting.
Abstract: This article reviews major micro- and nanolithography techniques and their applications from commercial micro devices to emerging applications in nanoscale science and engineering. Micro- and nanolithography has been the key technology in manufacturing of integrated circuits and microchips in the semiconductor industry. Such a technology is also sparking a magnificent transformation of nanotechnology. The lithography techniques including photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography and scanning probe lithography are discussed. Furthermore, their applications are reviewed and summarized into four major areas: electronics and microsystems, medical and biotech, optics and photonics, and environment and energy harvesting.
TL;DR: In this paper, it was shown that water (n = 144) has been found as the best liquid for the ArF immersion lithography in the case of 193nm exposure, and that water has an equivalent performance to F2 (157nm) dry (NA=085 to 093).
Abstract: Imaging performance and issues of immersion lithography are discussed with the results of the recent feasibility studies Immersion lithography has advantage in the numerical aperture of optics by a factor of refractive index n of the liquid filled into the space between the bottom lens and wafer In case of 193nm exposure, water (n = 144) has been found as the best liquid It is shown, by using imaging simulations, that ArF (193nm) immersion lithography (NA=105 to 123) has equivalent performance to F2 (157nm) dry (NA=085 to 093) lithography Six fundamental issues in the ArF immersion lithography are investigated and studied Results of the study indicate that there are no “show stoppers” that prevent going into the next phase of feasibility study