TL;DR: In this paper, quaternary stannite-type semiconductor films of Cu2CdSnS4 and Cu2ZnSnSS4 with (112) orientation were deposited on heated glass substrates using atom beam sputtering.
Abstract: Quaternary stannite-type semiconductor films of Cu2CdSnS4 and Cu2ZnSnS4 with (112) orientation were deposited on heated glass substrates using atom beam sputtering. These p-type films showed resistivities which were decreasing functions of the substrate temperature up to 240°C. The films had an absorption coefficient larger than 1 × 104 cm-1 in the visible wavelength range. The direct optical band gaps of the (112) oriented polycrystalline films were estimated as 1.06 eV and 1.45 eV for Cu2CdSnS4 and Cu2ZnSnS4, respectively.
TL;DR: In this article, the results of the characterization by XRD, electron backscatter diffraction and scanning electron microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase.
TL;DR: In this article, a stoichiometric Cu2ZnSnS4 film with the stannite structure and resistivity of 2 × 10 2 Ω · cm has been prepared by annealing polycrystalline quaternary films at 550°C, which are spray-deposited on glass substrates, in an argon gas flow containing H2S.
TL;DR: In this paper, thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications.