Topic
Spreading resistance profiling
About: Spreading resistance profiling is a research topic. Over the lifetime, 1307 publications have been published within this topic receiving 15168 citations.
Papers published on a yearly basis
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Papers
TL;DR: In this article, the activation enthalpy and pre-exponential factor for dopant diffusion under intrinsic condition were determined to 2.85 eV and 9.1 cm2−1 for P, 2.71 eV for As, and 2.55eV for Sb.
Abstract: Diffusion experiments of phosphorus (P), arsenic (As), and antimony (Sb) in high purity germanium (Ge) were performed at temperatures between 600 and 920 °C. Secondary ion mass spectrometry and spreading resistance profiling were applied to determine the concentration profiles of the chemically and electrically active dopants. Intrinsic and extrinsic doping conditions result in a complementary error function and box-shaped diffusion profiles, respectively. These profiles demonstrate enhanced dopant diffusion under extrinsic doping. Accurate modeling of dopant diffusion is achieved on the basis of the vacancy mechanism taking into account singly negatively charged dopant-vacancy pairs and doubly negatively charged vacancies. The activation enthalpy and pre-exponential factor for dopant diffusion under intrinsic condition were determined to 2.85 eV and 9.1 cm2 s−1 for P, 2.71 eV and 32 cm2 s−1 for As, and 2.55 eV and 16.7 cm2 s−1 for Sb. With increasing atomic size of the dopants the activation enthalpy dec...
218 citations
TL;DR: In this article, nonvolatile and reversible resistive switching of copper doped MoOx film was studied and the authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots.
Abstract: Nonvolatile and reversible resistance switching of copper doped MoOx film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 106cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25h at 85°C. The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into MoOx film from the bottom electrode.
154 citations
TL;DR: In this paper, the authors investigated the in-and out-diffusion of gold in silicon with the aid of a neutronactivation analysis in combination with mechanical sectioning or by the spreading resistance technique.
Abstract: In- and out-diffusion of gold in silicon were investigated with the aid of a neutronactivation analysis in combination with mechanical sectioning or by the spreadingresistance technique. In-diffusion profiles in the range 1371–1073 K show that Au diffuses in Si mainly via the so-called kick-out mechanism. From the Au diffusion and solubility measurements the interstitialcy contributionDISD to the Si self-diffusion coefficient was determined, which shows that the self-diffusion occurs to a considerable extent via selfinterstitials. Out-diffusion profiles at 1173 K were measured on wafers homogeneously supersaturated with Au. The observed decrease of the electrical activity of Au in the bulk indicates that during the out-diffusion anneal the majority of Au atoms originally dissolved substitutionally changes its configuration.
122 citations
TL;DR: In this paper, a sensitive porous silicon (PS) gas sensor which utilizes photoluminescence induced electroless metallization as a means of obtaining a highly efficient electrical contact has been demonstrated for the detection of HCl, NH3, and NO at the 10 ppm level.
Abstract: The development of a sensitive porous silicon (PS) gas sensor which utilizes photoluminescence induced electroless metallization as a means of obtaining a highly efficient electrical contact has been demonstrated for the detection of HCl, NH3, and NO at the 10 ppm level. The problem of spreading resistance (kΩ–MΩ) is overcome as low resistance contacts ∼20–100 Ω are made to the mesoporous PS structure through electroless gold plating. The response of this device, which operates at a bias voltage of 1–10 mV, is rapid and reversible.
121 citations
TL;DR: In this paper, the effects of temperature, oxygen partial pressure, and mechanical loading on the contact impedance of gold electrodes on nanophase cerium dioxide was investigated using pixel-based computer simulations.
116 citations
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Performance Metrics
| Year | Papers |
|---|---|
| 2025 | 1 |
| 2024 | 7 |
| 2023 | 6 |
| 2022 | 11 |
| 2021 | 12 |
| 2020 | 21 |