Topic
Semiconductor process simulation
About: Semiconductor process simulation is a research topic. Over the lifetime, 261 publications have been published within this topic receiving 2366 citations.
Papers published on a yearly basis
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Papers
Book•
1 Mar 1994
TL;DR: In this article, the authors identify the reasons why three-dimensional process simulators are not widely available, when 3-dimensional device simulators have been widely available and possible solutions are provided.
Abstract: This paper will identify the reasons three-dimensional process simulators are not widely available, when three-dimensional device simulators are widely available. There appear to be four major obstacles; metrology, models, numerics, and structural barriers. Each of these will be discussed and possible solutions will be provided.
194 citations
TL;DR: The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional and three-dimensional models, including several choices of variables, including the basic semiconductor equations.
Abstract: The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] discusses the numerical simulation of such device models. Here we describe the basic semiconductor equations including several choices of variables. Our examples illustrate results obtained from finite-difference and finite-element implementations. We stress the necessary 3D calculations for small-size MOSFET's. Numerical results on inter-electrode capacitive coupling are included.
148 citations
1 Jan 1995
TL;DR: In this article, the authors present two essential integrated micro electro mechanical systems (iMEMS) development tools: (i) the data base ICMAT of material parameters obtained from measuring process-dependent IC thin film electrical, magnetic, thermal and mechanical properties by using dedicated materials characterisation microstructures and (ii) the toolbox SOLIDIS, providing coupled numerical modelling of the electrical, Magnetic, Thermal and Mechanical phenomena and their boundary and interface conditions occurring in iMEMS devices in a uniform and consistent environment.
Abstract: Integrated micro electro mechanical systems (iMEMS) include sensors, actuators and circuits made by silicon IC technology combined with micromachining, deposition or electroplating. We present two essential iMEMS development tools: (i) the data base ICMAT of material parameters obtained from measuring process-dependent IC thin film electrical, magnetic, thermal and mechanical properties by using dedicated materials characterisation microstructures and (ii) the toolbox SOLIDIS, providing coupled numerical modelling of the electrical, magnetic, thermal and mechanical phenomena and their boundary and interface conditions occurring in iMEMS devices in a uniform and consistent environment.
137 citations
TL;DR: In this article, a numerical iterative scheme is presented for the solution of the 1- and 2-dimensional semiconductor d.c. transport equations, applied to an n-p-n transistor structure.
Abstract: A numerical iterative scheme is presented for the solution of the 1- and 2-dimensional semiconductor d.c. transport equations. This scheme is applied to an n-p-n transistor structure. Input data are geometry, doping profile, boundary conditions and, optionally, mobility dependencies and generation-recombination law.
79 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2020 | 1 |
| 2017 | 9 |
| 2016 | 13 |
| 2015 | 16 |
| 2014 | 11 |
| 2013 | 7 |