Topic
Semiconductor characterization techniques
About: Semiconductor characterization techniques is a research topic. Over the lifetime, 7 publications have been published within this topic receiving 137 citations.
Papers
TL;DR: The use of surface voltage and surface photovoltage measurements has broadened from initial application of minority carrier diffusion length measurements to a wide variety of semiconductor characterization, including surface voltage, surface barrier height, flatband voltage, oxide thickness, oxide charge density, interface trap density, mobile chargedensity, oxide integrity, generation lifetime, recombination lifetime and doping density.
Abstract: Surface voltage and surface photovoltage measurements have become important semiconductor characterization techniques, largely because of their contactless nature and the availability of commercial equipment. The use of these contactless measurement techniques has broadened from initial application of minority carrier diffusion length measurements to a wide variety of semiconductor characterization, including surface voltage, surface barrier height, flatband voltage, oxide thickness, oxide charge density, interface trap density, mobile charge density, oxide integrity, generation lifetime, recombination lifetime and doping density. It is likely that this range of applications will broaden further. As with all characterization techniques, there are limitations but they are frequently compensated by the contactless nature of the measurement thereby simplifying test structure fabrication.
94 citations
TL;DR: In this article, the fundamental principles of scanning tunneling microscopy, atomic force microscopy and other scanning probe techniques are described, with particular emphasis on the elucidation of epitaxial growth mechanisms, and on the atomic-scale characterization of interface and alloy layer structure in III-V heterostructures by crosssectional techniques.
Abstract: Scanning probe techniques are applied to a rapidly growing degree in the characterization of advanced semiconductor materials and device structures. In this review, the fundamental principles of scanning tunneling microscopy, atomic force microscopy, and other scanning probe techniques are described. The application of these techniques to the characterization of III–V and Group IV semiconductor epitaxial growth and epitaxial layer structure is discussed, with particular emphasis on the elucidation of epitaxial growth mechanisms, and on the atomic-scale characterization of interface and alloy layer structure in III–V heterostructures by crosssectional techniques. Nanoscale characterization of buried metal-semiconductor and semiconductor-semiconductor interfaces using ballistic electron emission microscopy is also addressed. Finally, a detailed discussion is included concerning the use of scanning probe techniques for nanometer-scale characterization of ultrasubmicron Si electronic devices — a problem of central importance in ultralarge-scale integrated circuit technology for the coming decade and beyond. Throughout the review, emphasis is placed on the role of scanning probe microscopy in relation to other semiconductor characterization techniques, the influence of various atomic- to nanometer-scale material properties on semiconductor device behavior, and the importance in many instances of theoretical modeling and simulation in the interpretation of results obtained using scanning probe techniques.
37 citations
1 Jan 2009
TL;DR: Semiconductor characterization techniques are used in order to gain knowledge on the physical properties of a semiconductor crystal as discussed by the authors, which is similar to decoding the DNA sequence of a living organism as it involves understanding the nanoscale structure of the crystal, i.e., its atoms, electrons, structures, and interactions with the surrounding environment.
Abstract: Semiconductor characterization techniques are used in order to gain knowledge on the physical properties of a semiconductor crystal. The process is similar to decoding the DNA sequence of a living organism as it involves understanding the nanoscale structure of the crystal, i.e., its atoms, electrons, structures, and interactions with the surrounding environment. The knowledge gained from the characterization process is essential in determining whether the semiconductor crystal probed is suitable for a particular device component with certain functionalities.
28 citations
TL;DR: In this paper, the potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors is demonstrated for Si, ZnO, and multilayer structures, such as an AlGaAs/GaAs solar cell.
Abstract: The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors is demonstrated for Si, ZnO, and multilayer structures, such as an AlGaAs/GaAs solar cell. The types of defects discussed include: i) vacancy complexes, oxygen impurities and dopants, ii) the influence of cooling rates on spatial non-uniformities in defects, and iii) characterization of buried interfaces. In sev-eral instances, the results of the PAS investigations are correlated with data from other established semiconductor characterization techniques.
5 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2021 | 1 |
| 2010 | 1 |
| 2009 | 1 |
| 2002 | 1 |
| 1996 | 1 |
| 1989 | 1 |