Semiconduction

Abstract: Chapter 1 - Introduction. 1.1 Historical Perspective 1.2 Materials Science and Engineering 1.3 Why Study Materials Science and Engineering? 1.4 Classification of Materials Materials of Importance-Carbonated Beverage Containers 1.5 Advanced Materials 1.6 Modern Materials Needs 1.7 Processing/Structure/Properties/Performance Correlations Chapter 2 - Atomic Structure and Interatomic Bonding. 2.1 Introduction 2.2 Fundamental Concepts 2.3 Electrons in Atoms 2.4 The Periodic Table 2.5 Bonding Forces and Energies 2.6 Primary Interatomic Bonds 2.7 Secondary Bonding or van der Waals Bonding Materials of Importance-Water (Its Volume Expansion Upon Freezing) 2.8 Molecules Chapter 3 - Structures of Metals and Ceramics 3.1 Introduction 3.2 Fundamental Concepts 3.3 Unit Cells 3.4 Metallic Crystal Structures 3.5 Density Computations-Metals 3.6 Ceramic Crystal Structures 3.7 Density Computations-Ceramics 3.8 Silicate Ceramics 3.9 Carbon Materials of Importance-Carbon Nanotubes 3.10 Polymorphism and Allotropy Material of Importance-Tin (Its Allotropic Transformation) 3.11 Crystal Systems 3.12 Point Coordinates 3.13 Crystallographic Directions 3.14 Crystallographic Planes 3.15 Linear and Planar Densities 3.16 Close-Packed Crystal Structures 3.17 Single Crystals 3.18 Polycrystalline Materials 3.19 Anisotropy 3.20 X-Ray Diffraction: Determination of Crystal Structures 3.21 Noncrystalline Solids Chapter 4 - Polymer Structures 4.1 Introduction 4.2 Hydrocarbon Molecules 4.3 Polymer Molecules 4.4 The Chemistry of Polymer Molecules 4.5 Molecular Weight 4.6 Molecular Shape 4.7 Molecular Structure 4.8 Molecular Configurations 4.9 Thermoplastic and Thermosetting Polymers 4.10 Copolymers 4.11 Polymer Crystallinity 4.12 Polymer Crystals Chapter 5 - Imperfections in Solids 5.1 Introduction 5.2 Point Defects in Metals 5.3 Point Defects in Ceramics 5.4 Impurities in Solids 5.5 Point Defects in Polymers 5.6 Specification of Composition 5.7 Dislocations-Linear Defects 5.8 Interfacial Defects Materials of Importance-Catalysts (and Surface Defects) 5.9 Bulk or Volume Defects 5.10 Atomic Vibrations 5.11 Basic Concepts of Microscopy 5.12 Microscopic Techniques 5.13 Grain Size Determination Chapter 6 - Diffusion 6.1 Introduction 6.2 Diffusion Mechanisms 6.3 Steady-State Diffusion 6.4 Nonsteady-State Diffusion 6.5 Factors That Influence Diffusion 6.6 Diffusion in Semiconducting Materials Material of Importance-Aluminum for Integrated Circuit Interconnects 6.7 Other Diffusion Paths 6.8 Diffusion in Ionic and Polymeric Materials Chapter 7 - Mechanical Properties 7.1 Introduction 7.2 Concepts of Stress and Strain 7.3 Stress-Strain Behavior 7.4 Anelasticity 7.5 Elastic Properties of Materials 7.6 Tensile Properties 7.7 True Stress and Strain 7.8 Elastic Recovery after Plastic Deformation 7.9 Compressive, Shear, and Torsional Deformation 7.10 Flexural Strength 7.11 Elastic Behavior 7.12 Influence of Porosity on the Mechanical Properties of Ceramics 7.13 Stress-Strain Behavior 7.14 Macroscopic Deformation 7.15 Viscoelastic Deformation 7.16 Hardness 7.17 Hardness of Ceramic Materials 7.18 Tear Strength and Hardness of Polymers 7.19 Variability of Material Properties 7.20 Design/Safety Factors Chapter 8 - Deformation and Strengthening Mechanisms 8.1 Introduction 8.2 Historical 8.3 Basic Concepts of Dislocations 8.4 Characteristics of Dislocations 8.5 Slip Systems 8.6 Slip in Single Crystals 8.7 Plastic Deformation of Polycrystalline Metals 8.8 Deformation by Twinning 8.9 Strengthening by Grain Size Reduction 8.10 Solid-Solution Strengthening 8.11 Strain Hardening 8.12 Recovery 8.13 Recrystallization 8.14 Grain Growth 8.15 Crystalline Ceramics 8.16 Noncrystalline Ceramics 8.17 Deformation of Semicrystalline Polymers 8.18 Factors That Influence the Mechanical Properties of Semicrystalline Polymers Materials of Importance-Shrink-Wrap Polymer Films 8.19 Deformation of Elastomers Chapter 9 - Failure 9.1 Introduction 9.2 Fundamentals of Fracture 9.3 Ductile Fracture 9.4 Brittle Fracture 9.5 Principles of Fracture Mechanics 9.6 Brittle Fracture of Ceramics 9.7 Fracture of Polymers 9.8 Fracture Toughness Testing 9.9 Cyclic Stresses 9.10 The S-N Curve 9.11 Fatigue in Polymeric Materials 9.12 Crack Initiation and Propagation 9.13 Factors That Affect Fatigue Life 9.14 Environmental Effects 9.15 Generalized Creep Behavior 9.16 Stress and Temperature Effects 9.17 Data Extrapolation Methods 9.18 Alloys for High-Temperature Use 9.19 Creep in Ceramic and Polymeric Materials Chapter 10 - Phase Diagrams 10.1 Introduction 10.2 Solubility Limit 10.3 Phases 10.4 Microstructure 10.5 Phase Equilibria 10.6 One-Component (or Unary) Phase Diagrams 10.7 Binary Isomorphous Systems 10.8 Interpretation of Phase Diagrams 10.9 Development of Microstructure in Isomorphous Alloys 10.10 Mechanical Properties of Isomorphous Alloys 10.11 Binary Eutectic Systems Materials of Importance-Lead-Free Solders 10.12 Development of Microstructure in Eutectic Alloys 10.13 Equilibrium Diagrams Having Intermediate Phases or Compounds 10.14 Eutectoid and Peritectic Reactions 10.15 Congruent Phase Transformations 10.16 Ceramic Phase Diagrams 10.17 Ternary Phase Diagrams 10.18 The Gibbs Phase Rule 10.19 The Iron-Iron Carbide (Fe-Fe3C) Phase Diagram 10.20 Development of Microstructure in Iron-Carbon Alloys 10.21 The Influence of Other Alloying Elements Chapter 11 - Phase Transformations 11.1 Introduction 11.2 Basic Concepts 11.3 The Kinetics of Phase Transformations 11.4 Metastable versus Equilibrium States 11.5 Isothermal Transformation Diagrams 11.6 Continuous-Cooling Transformation Diagrams 11.7 Mechanical Behavior of Iron-Carbon Alloys 11.8 Tempered Martensite 11.9 Review of Phase Transformations and Mechanical Properties for Iron-Carbon Alloys Materials of Importance-Shape-Memory Alloys 11.10 Heat Treatments 11.11 Mechanism of Hardening 11.12 Miscellaneous Considerations 11.13 Crystallization 11.14 Melting 11.15 The Glass Transition 11.16 Melting and Glass Transition Temperatures 11.17 Factors That Influence Melting and Glass Transition Temperatures Chapter 12 - Electrical Properties 12.1 Introduction 12.2 Ohm's Law 12.3 Electrical Conductivity 12.4 Electronic and Ionic Conduction 12.5 Energy Band Structures in Solids 12.6 Conduction in Terms of Band and Atomic Bonding Models 12.7 Electron Mobility 12.8 Electrical Resistivity of Metals 12.9 Electrical Characteristics of Commercial Alloys Materials of Importance-Aluminum Electrical Wires 12.10 Intrinsic Semiconduction 12.11 Extrinsic Semiconduction 12.12 The Temperature Dependence of Carrier Concentration 12.13 Factors that Affect Carrier Mobility 12.14 The Hall Effect 12.15 Semiconductor Devices 12.16 Conduction in Ionic Materials 12.17 Electrical Properties of Polymer 12.18 Capacitance 12.19 Field Vectors and Polarization 12.20 Types of Polarization 12.21 Frequency Dependence of the Dielectric Constant 12.22 Dielectric Strength 12.23 Dielectric Materials 12.24 Ferroelectricity 12.25 Piezoelectricity Chapter 13 - Types and Applications of Materials 13.1 Introduction 13.2 Ferrous Alloys 13.3 Nonferrous Alloys Materials of Importance-Metal Alloys Used for Euro Coins 13.4 Glasses 13.5 Glass-Ceramics.

Abstract: Part 1 Introduction: scope and plan of the book chemical aspects structural principles electronic classification. Part 2 Models of electronic structure: ionic models cluster models band theory intermediate models. Part 3 Insulating oxides: d0 compounds other closed-shell oxides transition metal impurities magnetic insulators. Part 4 Defects and semiconduction: electronic carrier properties the point-defect model carrier binding energies and spectroscopy transition to the metallic state. Part 5 Metallic oxides: simple metals electron correlation and magnetic anomalies Lattice interactions superconductivity.

Abstract: Experimental thermal property data of the Sony US-18650 lithium-ion battery and components are presented, as well as thermal property measuring techniques. The properties in question are specific heat capacity (C{sub p}), thermal diffusivity ({alpha}), and thermal conductivity ({kappa}), in the presence and absence of electrolyte [1 M LiPF{sub 6} in ethylene carbonate-dimethyl carbonate (EC:DMC, 1:1 wt %)]. The heat capacity of the battery, C{sub p}, is 0.96 {+-} 0.02 J/g K at an open-circuit voltage (OCV) of 2.75 V, and 1.04 {+-} 0.02 J/g K at 3.75 V. The thermal conductivity, {kappa}, was calculated from {kappa} {identical_to} {alpha}{rho}C{sub p} where {alpha} was measured by a xenon-flash technique. In the absence of electrolyte, {kappa} increases with OCV, for both the negative electrode (NE) and the positive electrode (PE). For the NE, the increase is 26% as the OCV increases from 2.75 to 3.75 V, whereas for the PE the increase is only 5 to 6%. The dependence of both C{sub p} and {kappa} on OCV is explained qualitatively by considering the effect of lithiation and delithiation on the electron carrier density, which leads to n-type semiconduction in the graphitic NE material, but a change from semiconducting to metallic character in Li{submore » x}CoO{sub 2} PE material. The overall effect is an increase of C{sub p} and {kappa} with OCV. For {kappa} this dependence is eliminated by electrolyte addition, which, however, greatly increases the effective {kappa} of the layered battery components by lowering the thermal contact resistance. For both NE and PE, the in-plane {kappa} value (measured along layers) is nearly one order of magnitude higher than the cross-plane {kappa}. This is ascribed mostly to the high thermal conductivity of the current collectors and to a lesser extent to the orientation of particles in the layers of electrodes.« less

Abstract: Although indium tin oxide (ITO) is widely used in optoelectronics due to its high optical transmittance and electrical conductivity, its degenerate doping limits exploitation as a semiconduction material. In this work, we created short-channel active transistors based on an ultra-thin (down to 4 nm) ITO channel and a high-quality, lanthanum-doped hafnium oxide dielectric of equivalent oxide thickness of 0.8 nm, with performance comparative to that of existing metal oxides and emerging two-dimensional materials. Short-channel immunity, with a subthreshold slope of 66 mV per decade, off-state current 10 GHz, have been demonstrated. The unique wide bandgap and low dielectric constant of ITO provide prospects for future scaling below the 5-nm regime for advanced low-power electronics. Controlled physical vapour deposition of indium tin oxide layers with thickness down to 4 nm allows the use of these materials as active channels in high-performing transistors for digital and radiofrequency electronics.