Rutherford scattering

Abstract: of Volume 1.- I. Energy Loss and Straggling.- The Treatment of Energy-Loss Fluctuations in Surface-Layer Analysis by Ion Beams.- Evidence of Solid State Effects in the Energy Loss of 4He Ions in Matter.- Empirical Stopping Cross Sections for 4He Ions.- Determination of Stopping Cross Sections by Rutherford Backscattering.- Depth Profiling of Implanted 3He in Solids by Nuclear Reaction and Rutherford Backscattering.- Energy Loss Straggling of Protons in Thick Absorbers.- Energy Dependence of Proton Straggling in Carbon.- Energy Straggling of 4He Ions in Al and Cu in the Backscattering Geometry.- Energy Spreading Calculations and Consequences.- Analysis of Nuclear Scattering Cross Sections by Means of Molecular Ions.- II. Backscattering Analysis.- Determining Concentration vs. Depth Profiles from Backscattering Spectra without Using Energy Loss Values.- Comparative Analysis of Surface Layers by Backscattering and by Auger Electron Spectroscopy.- Analyzing the Formation of a Thin Compound Film by Taking Moments on Backscattering Spectra.- Computer Analysis of Nuclear Backscattering.- Some Practical Aspects of Depth Profiling Gases in Metals by Proton Backscattering: Application to Helium and Hydrogen Isotopes.- Depth Profiling of Deuterium and Helium in Metals by Elastic Proton Scattering: A Measurement of the Enhancement of the Elastic Scattering Cross Section over Rutherford Scattering Cross Section.- Near-Surface Investigation by Backscattering of N+ Ions and Grazing Angle Beam Incidence.- The Application of Low Angle Rutherford Backscattering to Surface Layer Analysis.- Measurement of Projected and Lateral Range Parameters for Low Energy Heavy Ions in Silicon by Rutherford Backscattering.- Range Parameters of Heavy Ions in Silicon and Germanium with Reduced Energies from 0.001 ? ? ? 10.- On Problems of Resolving Power in Rutherford Backscattering.- Studies of Surface Contaminations, Composition and Formation of Superconducting Layers of V, Nb3Sn and of Tunneling Elements Using High Energetic Protons Combined with Heavy Ions.- Determination of Implanted Carbon Profiles in NbC Single Crystals from Random Backscattering Spectra.- Pore Size from Resonant Charged Particle Backscattering.- Measurement of Thermal Diffusion Profiles of Gold Electrodes on Amorphous Semiconductor Devices by Deconvolution of Ion Backscattering Spectra.- Enhanced Sensitivity of Oxygen Detection by the 3.05 MeV (?,?) Plastic Scattering.- Progress Report on the Backscattering Standards Project (Abstract).- III. Applications of Backscattering and Combined Techniques.- Ion Beam Studies of Thin Films and Interfacial Reactions.- Studies of Tantalum Nitride Thin Film Resistors.- Investigation of CVD Tungsten Metallizations on Silicon by Backscattering.- Ion Beam Analysis of Aluminium Profiles in Heteroepitaxial Ga1-xAlxAs-Layers.- Analysis of Ga1-xA1xAs-GaAs Heteroepitaxial Layers by Proton Backscattering.- Interdiffusion Kinetics in Thin Film Couples.- Backscattering and T.E.M. Studies of Grain Boundary Diffusion in Thin Metal Films.- The Analysis of Nickel and Chromium Migration Through Gold Layers.- Applications of Ion Beam Analysis to Insulators.- Lithium Ion Backscattering as a Novel Tool for the Charac terization of Oxidized Phases of Aluminum Obtained from Industrial Anodization Procedures.- Investigation of an Amino Suger-Like Compound from the Cell Walls of Bacteria Using Backscattering of MeV Particles.- IV. Equipment.- Versatile Apparatus for Real-Time Profiling of Interacting Thin Films Deposited in Situ.- Application of a High-Resolution Magnetic Spectrometer to Near-Surface Materials Analysis.- Rutherford Backscattering Analysis with Very High Depth Resolution Using an Electrostatic Analysing System.- An Apparatus for the Study of Ion and Photon Emission from Ion Bombarded Surfaces: I. Some Preliminary Results.- Author Index.

Abstract: I. Implantation Modification of Superconductivity.- Superconductivity of Palladium and Pd-Alloys Charged with H or D by Ion Implantation at Helium Temperatures.- Ion Implantation in Superconducting Thin Films.- Ion Implantation in Superconducting Niobium Thin Films.- Superconducting Properties of the Dilute Magnetic Alloys Pb-Mn, Sn-Mn and Hg-Mn Obtained by Ion Implantation.- Ion Irradiation and Flux Pinning in Type II Superconductors.- II. Ion Induced Surface Reactions.- The Use of Ion Beams in Corrosion Science.- The Effects of Ion Bombardment on the Thin Film Oxidation Behavior of Zircaloy-4 and Zr-1.0 Nb.- Ion Implantation and Backscattering from Oxidized Single-Crystal Copper.- Movement of Ions During the Anodic Oxidation of Aluminum.- Friction and Wear of Ion Implanted Metals.- III. Thin Films and Interfaces.- Ion Beam Studies of Metal-Metal and Metal-Semiconductor Reactions.- Rutherford Scattering Studies of Diffusion in Thin Multilayer Metal Films.- Analysis of Compound Formation in Au-Al Thin Films.- Thin Film Interdiffusion of Chromium and Copper.- Ion Backscattering Study of WSi2 Layer Growth in Sputtered W Contacts on Silicon.- Reactions of Thin Metal Films with Si or SiO2 Substrates.- Ion Beam Induced Intermixing in the Pd/Si System.- IV. Alloying and Migration in High Fluence Implants.- Precipitation During Ion Bombardment of Metals.- Radiation Damage and Ion Behavior in Ion Implanted Vanadium and Nickel Single Crystals.- Sb-Implanted A? Studied by Ion Backscattering and Electron Microscopy.- The Changes in Electrical Properties of Tantalum Thin Films Following Ion Bombardment.- Implantation and Diffusion of Au in Be: Behavior During Annealing of a Low-Solubility Implant.- Anomalous Room Temperature Diffusion of Ion-Injected Ni in Zn Targets.- Study of Li-6 Implanted into Niobium.- V. Implanted Atom Location.- Lattice Location of Impurities Implanted into Metals.- High Substitutional Fractions in Cold Implantations of Xe and Te in Iron as Shown by Mossbauer Effect Measurements.- Valence Determination and Lattice Location via Mossbauer Spectroscopy of Gd151 Implanted into Iron.- Combined Lattice Location and Hyperfine Field Study of Yb Implanted into Fe.- Effect of Radiation Damage on Lattice Location and Hyperfine Interactions of Impurities Implanted in Iron.- Determination of Unique Site Population in Various In Implanted Non-Cubic Metals using Angular Correlations and the Nuclear Electric Quadrupole Interaction.- The Location of Displaced Manganese and Silver Atoms in Irradiated Aluminum Crystals by Backscattering.- Lattice Location Studies of 2D and 3He in W.- Location of He Atoms in a Metal Vacancy.- Simulation of Inert Gas Interstitial Atoms in Tungsten.- VI. Ion Lattice Damage.- Ion Damage Effects in Metals as Studied by Transmission Electron Microscopy.- Transmission Electron Microscopy Study of Implantation Induced Defects in Gold.- Transmission Electron Microscope Studies of Defect Clusters in Aluminium Irradiated with Gold Ions.- Dechanneling from Damage Clusters in Heavy Ion Irradiated Gold.- Heavy Ion Damage in Thin Metal Films.- Formation of Interstitial Agglomerates and Gas Bubbles in Cubic Metals Irradiated with 5 keV Argon Ions.- Observation of Ion Bombardment Damage in a Ni (100) Crystal by Helium Ion Injection.- VII. Ion Implanted Gas Buildup.- Helium Implantation Effects in Vanadium and Niobium.- Effect of He+ and D+ Ion Beam Flux on Blister Formation in Niobium and Vanadium.- Depth Distribution and Migration of Implanted Helium in Metal Foils using Proton Backscattering.- Blistering of Niobium due to Low Energy Helium Ion Bombardment Investigated by Rutherford Backscattering.- Radiation Damage and Gas Diffusion in Molybdenum Under Deuteron Bombardment.- Radiation Blistering After H+, D+ and He+ Ion Implantation into Surfaces of Stainless Steel, Mo, and Be.- VIII. Voids and Implantation Simulation of Neutron Damage.- A Review of Ion Simulation of High Temperature Neutron Damage and Void Formation.- Ion Radiation Damage.- 4 MeV Iron Atom Bombardment of Iron.- Flux (Dose Rate) Effects for 2.8 MeV 58Ni Irradiations of Pure Ni.- Heavy Ion-Induced Void Formation in Pure Nickel.- The Temperature Dependence of Irradiation Induced Void Swelling in 20% Cold Worked Type 316 Stainless Steel Irradiated with 5 MeV Nickel Ions.- Author Index.

Abstract: The near‐surface nucleation and crystallization behavior of Ag+ ion‐implanted lithia‐alumina‐silica glasses has been studied. For room‐temperature Ag implants, crystallization of the glass ceramic phase was prevented by dissolution of Ag precipitates and migration of Ag atoms at temperatures below that necessary for formation of the glass ceramic phase. Crystallization was demonstrated after low‐temperature or low‐dose‐rate implantations. Optical spectroscopy was used to monitor the size of colloidal Ag particles and to detect the presence of the crystalline phase. Rutherford backscattering spectroscopy (RBS) was used to obtain the depth distribution of Ag atoms in the glass and thus monitor Ag migration. For samples implanted at room temperature and at relatively high dose rates (∼1 μA/cm2), aggregation of the Ag atoms into colloids occurred during implantation and also during subsequent annealing to temperatures ?350 °C. The RBS spectra indicate some migration of the Ag to the surface at these temperatu...