TL;DR: The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range.
Abstract: The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. Anisotropy of mu vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting mu, an indication that the filled traps do not scatter polarons.
TL;DR: In this paper, the authors demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors by the use of nine organosilanes with different functional groups.
Abstract: We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self-assembled monolayer (SAM). The observed shifts of the transfer characteristics range from −2to50V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4×1012∕cm2. In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold re...
TL;DR: In this paper, the organic field-effect transistors (OFETs) on the surface of single crystals of rubrene have been fabricated and the parylene polymer film has been used as the gate insulator.
Abstract: We report on the fabrication and characterization of the organic field-effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field-effect mobility 0.1–1 cm2/V s and the on/off ratio⩾104. The temperature dependence of the mobility is discussed.
TL;DR: In this article, the electronic and optical properties of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant πconjugation systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3 and Inq3); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2t, α-3T,β-4T and α-
TL;DR: In this paper, an EA dopant system for obtaining organic light-emitting diodes (OLEDs) with pure red emission was proposed, which did not itself emit but assisted the energy transfer from the host (Alq3) to the red emitting dopant (DCM2).
Abstract: We propose an emitting assist (EA) dopant system for obtaining organic light-emitting diodes (OLEDs) with pure red emission. The EA dopant (rubrene) did not itself emit but assisted the energy transfer from the host (Alq3) to the red emitting dopant (DCM2). The cell structure used was {indium tin oxide/hole injection layer [(20 nm), CuPc/hole transport layer (50 nm), NPB/emitting layer (40 nm), Alq3+DCM2 (2%)+rubrene (5 wt %)]/MgIn}. (CuPc: Copper (II) phthalocyanine, NPB: N, N′-Di(naphthalen-1-yl)-N, N′-diphenyl-benzidine, DCM2: 4-Dicyanomethylene- 2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-8-yl)vinyl]-4H-pyran). A stable red emission (chromaticity coordinates: x=0.64, y=0.36) was obtained in this cell within the luminance range of 100–4000 cd/m2. When the cell was not doped with rubrene, the emission color changed from red to orange as the luminance increased. The EA dopant system is a promising method for obtaining red OLEDs.