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  4. 2015
Showing papers on "Reliability (semiconductor) published in 2015"
Journal Article•10.7567/JJAP.54.040103•
Material science and device physics in SiC technology for high-voltage power devices

[...]

Tsunenobu Kimoto1•
Kyoto University1
01 Apr 2015-Japanese Journal of Applied Physics
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

981 citations

Journal Article•10.1109/TPEL.2014.2373390•
Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

[...]

Ui-Min Choi1, Frede Blaabjerg1, Kyo-Beum Lee2•
Aalborg University1, Ajou University2
01 May 2015-IEEE Transactions on Power Electronics
TL;DR: An overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability is presented in this article, where fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.
Abstract: Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open- and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.

639 citations

Journal Article•10.1109/TPEL.2014.2380829•
Reliability Evaluation of Conventional and Interleaved DC–DC Boost Converters

[...]

Alireza E. Khosroshahi1, Mehdi Abapour1, Mehran Sabahi1•
University of Tabriz1
01 Oct 2015-IEEE Transactions on Power Electronics
TL;DR: In this paper, a reliability comparison is done between the conventional boost converter and the interleaved structure, and two different operation modes are defined for the Interleaved boost converter: half-power and full-power operation modes.
Abstract: Obviously for the correct operation of conventional boost converters, all components should work correctly. Interleaved boost converters having several stages, can be used to increase the reliability. So in this paper, a reliability comparison is done between the conventional boost converter and the interleaved structure. Two different operation modes are defined for the interleaved boost converter: half-power and full-power operation modes. The reliability calculation is based on the Markov model of the converters. The power loss effect of converter components on their failure rates, and therefore, on the reliability of converter has been assessed. For the first time different failure rates have been considered for different operation modes. Also a laboratory prototype of a two-stage interleaved boost dc–dc converter has been built up and the failure rate of components in different operation modes are calculated practically. Results show that in addition to other benefits, interleaved structure has higher reliability and as the power increases, there will be a decrease in the reliability.

202 citations

Journal Article•10.1109/MIE.2014.2352861•
Matching LED and Driver Life Spans: A Review of Different Techniques

[...]

Pedro S. Almeida1, Douglas Camponogara, Marco A. Dalla Costa2, Henrique A. C. Braga1, J. Marcos Alonso3 •
Universidade Federal de Juiz de Fora1, Universidade Federal de Santa Maria2, University of Oviedo3
22 Jun 2015-IEEE Industrial Electronics Magazine
TL;DR: A review of various proposed schemes to increase the reliability and life span of solid-state lighting (SSL) systems is presented in this article, where several power-?conversion configurations aimed to capacitance reduction and capacitor technology exchange are put forward as alternative solutions for implementing long-life drivers, with remarks on both their benefits and drawbacks.
Abstract: A review of various proposed schemes to increase the reliability and life span of solid-state lighting (SSL) systems is presented in this article. Since the mainstream devices employed for such lighting systems are inorganic, high-power light-emitting diodes (LEDs), which are devices characterized by their very long life, most of the questions in reliability and endurability arise from the electronic offline circuit driving the LEDs. Issues regarding the limited reliability of specific components, such as electrolytic capacitors, are introduced. Several power-?conversion configurations aimed to capacitance reduction and capacitor technology exchange are put forward as alternative solutions for implementing long-life drivers, with remarks on both their benefits and drawbacks. An extensive literature review on the topic is carried out, and some practical outcomes from recent research on offline LED driving are highlighted.

148 citations

Reliability of Power Electronic Converter Systems

[...]

Henry Shu-Hung Chung1, Huai Wang, Frede Blaabjerg, Michael Pecht2•
City University of Hong Kong1, University of Maryland, College Park2
1 Jan 2015

134 citations

Book•10.1007/978-1-4614-9266-5•
Fundamentals of lead-free solder interconnect technology: From microstructures to reliability

[...]

Tae-Kyu Lee1, Thomas R. Bieler, Choong-Un Kim, Hongtao Ma•
Cisco Systems, Inc.1
1 Jan 2015
TL;DR: In this article, the authors describe how to download and install the fundamentals of lead free solder interconnect technology from microstructures to reliability, it is definitely easy then, back currently we extend the colleague to buy and create bargains to download, install, and install fundamentals of LFSI from micro structures to reliability therefore simple!
Abstract: By searching the title, publisher, or authors of guide you essentially want, you can discover them rapidly. In the house, workplace, or perhaps in your method can be every best place within net connections. If you set sights on to download and install the fundamentals of lead free solder interconnect technology from microstructures to reliability, it is definitely easy then, back currently we extend the colleague to buy and create bargains to download and install fundamentals of lead free solder interconnect technology from microstructures to reliability therefore simple!

94 citations

Journal Article•10.1109/TIE.2014.2365433•
Decentralized Voltage-Sharing Control Strategy for Fully Modular Input-Series–Output-Series System With Improved Voltage Regulation

[...]

Wu Chen1, Guangjiang Wang1•
Southeast University1
01 May 2015-IEEE Transactions on Industrial Electronics
TL;DR: A novel decentralized voltage-sharing control strategy is proposed, which has the advantages of full modularity and high reliability, and each module is controlled independently without any control communication with other modules.
Abstract: Input-series–output-series (ISOS) system connection of dc–dc converters is suitable for high-input-voltage and high-output-voltage applications. Input voltage sharing and output voltage sharing of the constituent modules among the ISOS system must be ensured. This paper proposes a novel decentralized voltage-sharing control strategy, which has the advantages of full modularity and high reliability, and each module is controlled independently without any control communication with other modules. In order to ensure proper sharing of input and output voltages, the input voltage sensing signal is added to the reference voltage for each module, resulting in the positive output voltage gradient regulation characteristic of the ISOS system; moreover, a system output voltage shifting loop is introduced to improve the system voltage regulation. The proposed control strategy can effectively improve the modularity and reliability of the ISOS system. An ISOS system prototype consisting of three two-transistor forward converter modules is tested in the laboratory, and the experimental results verify the effectiveness of the control strategy.

88 citations

Journal Article•10.1016/J.RESS.2014.10.010•
A reliability-based design concept for lithium-ion battery pack in electric vehicles

[...]

Zhitao Liu, Cher Ming Tan1, Cher Ming Tan2, Feng Leng1•
Nanyang Technological University1, Chang Gung University2
01 Feb 2015-Reliability Engineering & System Safety
TL;DR: As adding new battery cells to the battery pack in the production process can improve its reliability but it also increases cost, tradeoff between the number of the redundant battery cells, the configuration of the redundancy cells and their reliability is investigated in this work.

80 citations

Proceedings Article•10.1109/IRPS.2015.7112692•
Transistor aging and reliability in 14nm tri-gate technology

[...]

S. Novak1, C. Parker1, D. Becher1, Mark Y. Liu1, M. Agostinelli1, M. Chahal1, Paul A. Packan1, P. Nayak1, S. Ramey1, Sanjay Natarajan1 •
Intel1
19 Apr 2015
TL;DR: The reliability metrics reported here highlight reliability gains attained through transistor optimizations as well as intrinsic challenges from device scaling.
Abstract: This paper details the transistor aging and gate oxide reliability of Intel's 14nm process technology. This technology introduces Intel's 2nd generation tri-gate transistor and the 4th generation of high-κ dielectrics and metal-gate electrodes. The reliability metrics reported here highlight reliability gains attained through transistor optimizations as well as intrinsic challenges from device scaling.

73 citations

Journal Article•10.1002/CHIN.201522310•
Memory on the Racetrack

[...]

Stuart S. P. Parkin1, See-Hun Yang1•
IBM1
01 Jun 2015-ChemInform
TL;DR: Racetrack memory as discussed by the authors stores digital data in the magnetic domain walls of nanowires, and it can yield information storage devices with high reliability, performance and capacity, but it is not suitable for high-dimensional data.
Abstract: Racetrack memory stores digital data in the magnetic domain walls of nanowires. This technology promises to yield information storage devices with high reliability, performance and capacity.

52 citations

Journal Article•10.1002/PIP.2461•
Temperature accelerated life test on commercial concentrator III–V triple‐junction solar cells and reliability analysis as a function of the operating temperature

[...]

Pilar Espinet-Gonzalez1, Carlos Algora1, Neftali Nuñez1, Vincenzo Orlando1, Manuel Vázquez1, Jesús Bautista1, Kenji Araki •
Technical University of Madrid1
01 May 2015-Progress in Photovoltaics
TL;DR: In this article, a temperature accelerated life test on commercial concentrator lattice-matched GaInP/GaInAs/Ge triple-junction solar cells has been carried out, where the acceleration of the aging has been accomplished by subjecting the solar cells at temperatures markedly higher than the nominal working temperature inside a concentrator, and the nominal photo current condition (820 X) has been emulated by injecting current in darkness.
Abstract: A temperature accelerated life test on commercial concentrator lattice-matched GaInP/GaInAs/Ge triple-junction solar cells has been carried out. The acceleration of the aging has been accomplished by subjecting the solar cells at temperatures markedly higher than the nominal working temperature inside a concentrator, and the nominal photo-current condition (820 X) has been emulated by injecting current in darkness. Three tests at different temperatures have been carried out. The failure distributions across the three test temperatures have been fitted to an Arrhenius–Weibull model. An Arrhenius activation energy of 1.59 eV was determined from the fit. The reliability functions and parameters of these solar cells at two nominal working conditions 80 and 100 ıC have been obtained. In both cases, the instantaneous failure rate function monotonically increases, that is, the failures are of the wear-out kind. We have also observed that the reliability data are very sensitive to the nominal temperature condition. In fact, at a nominal working condition of 820 X and 80 ıC, assuming that the concentration module works 5 h per day, the warranty time obtained for a failure population of 5% has been 113 years. However, for a nominal working condition of 820 X and 100 ıC, the warranty time obtained for a failure population of 5% has been 7 years. Therefore, in order to offer a long-term warranty, the working temperature could be a key factor in the design of the concentration photovoltaic systems. Copyright © 2014 John Wiley & Sons, Ltd.
Journal Article•10.3103/S106837121512010X•
Improving the reliability of electric drives of exhausters of the oxygen-converter process

[...]

M. A. Grigor’ev1, D. A. Sychev1, A. M. Zhuravlev1, E. S. Khayatov1, N. V. Savosteenko1 •
South Ural State University1
01 Dec 2015-Russian Electrical Engineering
TL;DR: In this article, it was shown that the reliability of the system can be improved in a synchronous electric drive with pulse-vector control at the reservation of a semiconductor converter.
Abstract: This paper deals with increasing the reliability of electric drives of exhausters of the oxygen-converter process. The dependences of the reliability parameters in the electrical converter–electric motor system on the power reserve were obtained. The costs for the installed equipment were taken as an optimization criterion. It is noted that improving the reliability of an electric drive is possible both by increasing the overall power of the power unit and by changing the number of phases. It is shown that the reliability of the system can be improved in a synchronous electric drive with pulse-vector control at the reservation of a semiconductor converter. A mathematical model of the electrical converter–reluctance motor with a field-regulated machine complex is proposed. The results of the mathematical modeling of the synchronous electric drive with pulse-vector control are considered. The dependence of the specific electric parameters on the number of phases is determined.
Journal Article•10.1002/CHIN.201547278•
High-Efficiency Silicon Solar Cells: A Review

[...]

Youngseok Lee1, Cheolmin Park1, Nagarajan Balaji1, Youn-Jung Lee1, Vinh Ai Dao1 •
Sungkyunkwan University1
01 Nov 2015-ChemInform
TL;DR: In this paper, the authors discuss key issues, cell concepts, and the status of recent high-efficiency crystalline silicon solar cells, and discuss the potential of Si cells for photovoltaic devices.
Abstract: Over the past few decades, crystalline silicon solar cells have been extensively studied due to their high efficiency, high reliability, and low cost. In addition, these types of cells lead the industry and account for more than half of the market. For the foreseeable future, Si will still be a critical material for photovoltaic devices in the solar cell industry. In this paper, we discuss key issues, cell concepts, and the status of recent high-efficiency crystalline silicon solar cells.
Proceedings Article•10.1063/1.4931563•
Enhancing ultra-high CPV passive cooling using least-material finned heat sinks

[...]

Leonardo Micheli1, Eduardo F. Fernández1, Florencia Almonacid2, K.S. Reddy3, Tapas K. Mallick1 •
University of Exeter1, University of Jaén2, Indian Institute of Technology Madras3
28 Sep 2015
TL;DR: In this article, the design of a heat sink for ultra-high concentrating photovoltaic (CPV) applications is presented, and a prediction of the costs is also reported: a cost of 0.151$/Wp is expected for a passive least-material heat sink developed for 4000x applications.
Abstract: Ultra-high concentrating photovoltaic (CPV) systems aim to increase the cost-competiveness of CPV by increasing the concentrations over 2000 suns. In this work, the design of a heat sink for ultra-high concentrating photovoltaic (CPV) applications is presented. For the first time, the least-material approach, widely used in electronics to maximize the thermal dissipation while minimizing the weight of the heat sink, has been applied in CPV. This method has the potential to further decrease the cost of this technology and to keep the multijunction cell within the operative temperature range. The designing procedure is described in the paper and the results of a thermal simulation are shown to prove the reliability of the solution. A prediction of the costs is also reported: a cost of 0.151$/Wp is expected for a passive least-material heat sink developed for 4000x applications.
Journal Article•10.1016/S1006-706X(15)30054-6•
Progress in the Research and Manufacture of GH4169 Alloy

[...]

Jinhui Du, Xu-dong Lu, Qun Deng, Zhong-nan Bi
01 Aug 2015-Journal of Iron and Steel Research International
TL;DR: The GH4169 alloy has been widely used in fields such as aviation, aerospace, and petrochemical, because of its excellent combination of mechanical and processing properties, such as good high-temperature strength, excellent creep and fatigue resistance, and good processing and welding performance as discussed by the authors.
Abstract: GH4169 alloy has been widely used in fields such as aviation, aerospace, and petrochemical, because of its excellent combination of mechanical and processing properties. These properties include good high-temperature strength, excellent creep and fatigue resistance, and good processing and welding performance. The requirement for high performance, high reliability, and long service life of modern engines has led to the incentive to develop GH4169 alloys with improved performance, such as increased temperature-bearing capacity, improved creep endurance, and better fatigue resistance. Advances during the past thirty years in basic research and industrial technology related to GH4169 alloy were systematically summarized, including advances in alloy modification, melting process optimization, and hot deformation technology.
Journal Article•10.1007/S00287-014-0850-0•
Electrical Grid and Supercomputing Centers: An Investigative Analysis of Emerging Opportunities and Challenges

[...]

Natalie Bates, Girish Ghatikar1, Ghaleb Abdulla2, Gregory A. Koenig3, Sridutt Bhalachandra4, Mehdi Sheikhalishahi5, Tapasya Patki6, Barry Rountree2, Stephen W. Poole3 •
Lawrence Berkeley National Laboratory1, Lawrence Livermore National Laboratory2, Oak Ridge National Laboratory3, University of North Carolina at Chapel Hill4, University of Calabria5, University of Arizona6
01 Apr 2015-Informatik Spektrum
TL;DR: In this article, some of the largest supercomputing centers (SCs) in the United States are developing new relationships with their electricity service providers (ESPs), which are driven by a mutual interest to reduce energy costs and improve electrical grid reliability.
Abstract: Some of the largest supercomputing centers (SCs) in the United States are developing new relationships with their electricity service providers (ESPs). These relationships, similar to other commercial and industrial partnerships, are driven by a mutual interest to reduce energy costs and improve electrical grid reliability. While SCs are concerned about the quality, cost, environmental impact, and availability of electricity, ESPs are concerned about electrical grid reliability, particularly in terms of energy consumption, peak power demands, and power fluctuations. The power demand for SCs can be 20 MW or more – the theoretical peak power requirements are greater than 45 MW – and recurring intra-hour variability can exceed 8 MW. As a result of this, ESPs may request large SCs to engage in demand response and grid integration.
10.17877/DE290R-7459•
A PCB Integrated Differential Rogowski Coil for Non-Intrusive Current Measurement Featuring High Bandwidth and dv/dt Immunity

[...]

Jan Niklas Fritz, Christoph Neeb1, Rik W. De Doncker•
RWTH Aachen University1
14 Jan 2015
TL;DR: This paper deals with the research, design and experimental verification of a current sensor based on the principle of a Rogowski coil, which is integrated into a PCB, so that it can measure the device current of the embedded power semiconductor devices.
Abstract: In the development of next-generation power modules for electric vehicles, demands for high efficiency, reliability, low cost, high power density and therefore small size are of major importance. A promising approach is the embedding of power semiconductor devices into a printed circuit board (PCB), as investigated by the HI-LEVEL project. This paper deals with the research, design and experimental verification of a current sensor based on the principle of a Rogowski coil, which is integrated into a PCB, so that it can measure the device current of the embedded power semiconductor devices. As switched-mode currents are to be measured, the dynamics of the current sensor were of major concern. Moreover, as large voltage gradients caused by the semiconductor devices inject parasitic capacitive currents into the coil, a differential measurement approach was selected for cancelling out disturbances caused by capacitive coupling.
Journal Article•10.6113/JPE.2015.15.5.1149•
Evaluation and Design Tools for the Reliability of Wind Power Converter System

[...]

Ke Ma, Dao Zhou, Frede Blaabjerg
20 Sep 2015-Journal of Power Electronics
TL;DR: In this paper, an advanced tool structure which can acquire various reliability metrics of wind power converter is proposed, based on failure mechanisms in critical components of the system and mission profiles in wind turbines.
Abstract: As a key part in the wind turbine system, the power electronic converter is proven to have high failure rates. At the same time, the failure of the wind power converter is becoming more unacceptable because of the quick growth in capacity, remote locations to reach, and strong impact to the power grid. As a result, the correct assessment of reliable performance for power electronics is a crucial and emerging need; the assessment is essential for design improvement, as well as for the extension of converter lifetime and reduction of energy cost. Unfortunately, there still exists a lack of suitable physic-of-failure based evaluation tools for a reliability assessment in power electronics. In this paper, an advanced tool structure which can acquire various reliability metrics of wind power converter is proposed. The tool is based on failure mechanisms in critical components of the system and mission profiles in wind turbines. Potential methodologies, challenges, and technology trends involved in this tool structure are also discussed. Finally, a simplified version of the tool is demonstrated on a wind power converter based on Double Fed Induction Generator system. With the proposed tool structure, more detailed information of reliability performances in a wind power converter can be obtained before the converter can actually fail in the field and many potential research topics can also be initiated.
Journal Article•10.1109/TVLSI.2014.2301458•
A Method for Improving Power Grid Resilience to Electromigration-Caused via Failures

[...]

Di-an Li1, Malgorzata Marek-Sadowska1, Sani R. Nassif2•
University of California, Santa Barbara1, IBM2
01 Jan 2015-IEEE Transactions on Very Large Scale Integration Systems
TL;DR: Experimental results show that using the proposed method, both EM reliability and power integrity can be met, while the additional metal area used is significantly reduced.
Abstract: Electromigration (EM) has become a major power grid reliability problem in VLSI. In this paper, we first demonstrate that EM reliability analysis of a power grid can be converted to analyzing EM reliability of the grid vias. We develop a model for calculating EM lifetime of via-arrays and observe that making power grid EM-immortal carries a huge metal area overhead and possibly makes routing of both power and signal networks too difficult to complete. We propose a method for trading off power grid integrity and reliability to minimize the total metal area overhead needed to achieve the desired grid life time under power integrity constraints. Experimental results show that using our method, both EM reliability and power integrity can be met, while the additional metal area used is significantly reduced.
Proceedings Article•10.1109/IRPS.2015.7112766•
Commercialization and reliability of 600 V GaN power switches

[...]

Toshihide Kikkawa, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Yoshimori Asai, Yifeng Wu, Likun Shen, Kurt Smith, Dixie Dunn, Saurabh Chowdhury, Pete Smith, John Gritters, Lee McCarthy, Ronald Barr, Rakesh K. Lal, Umesh K. Mishra, Primit Parikh 
19 Apr 2015
TL;DR: This suite of initial, JEDEC & accelerated stress tests show that GaN-on-silicon power switches are ready for many commercial and industrial applications, would significantly reduce switching losses and system size and will impact all areas of electricity conversion, ranging from tablet chargers to photovoltaic inverters and electric vehicles.
Abstract: The reliability of 600 V GaN power switches, fabricated in a silicon CMOS foundry, has been demonstrated. JEDEC qualification of cascode packages and the long term reliability of GaN power switches has been estimated for the first and shown to be greater than a million hours. Excellent switched/dynamic on-resistance up to 1000 V and breakdown voltage over 1500 V indicate the suitability of these devices for switching up to 480 V. Detailed data of high temperature reverse bias (HTRB) test is shown. High temperature DC stress test and high voltage off-state stress tests also corroborate the high reliability of these devices. This suite of initial, JEDEC & accelerated stress tests show that GaN-on-silicon power switches are ready for many commercial and industrial applications, would significantly reduce switching losses and system size and will impact all areas of electricity conversion, ranging from tablet chargers to photovoltaic inverters and electric vehicles.
Journal Article•10.1109/TEC.2015.2422792•
Using Improved Power Electronics Modeling and Turbine Control to Improve Wind Turbine Reliability

[...]

Ting Lei1, Mike Barnes1, Sandy Smith1, Sung-ho Hur2, Adam Stock2, William Leithead2 •
University of Manchester1, University of Strathclyde2
05 May 2015-IEEE Transactions on Energy Conversion
TL;DR: In this article, an electrothermal model of the power devices, which is integrated with a wind turbine system model for the investigation of power converter thermal cycling under various operating conditions, has been developed to eliminate the problems of pulse width modulation switching, substantially reducing simulation time.
Abstract: Improving offshore wind turbine reliability is a key industry goal to improve the availability of this renewable energy generation source. The semiconductor devices in the wind turbine power converter are traditionally considered as the most sensitive and important components to achieve this and managing their thermomechanical stressing is vital, since this is one of their principal long-term aging mechanisms. Conventional deterministic reliability prediction methods used in industrial applications are not suitable for wind turbine applications, due to the stochastic nature of the wind speed. This paper develops an electrothermal model of the power devices, which is integrated with a wind turbine system model for the investigation of power converter thermal cycling under various operating conditions. The model has been developed to eliminate the problems of pulse width modulation switching, substantially reducing simulation time. The model is used to improve the current controller tuning method to reduce thermal stresses suffered by the converter during a grid fault. The model is finally used to design a control method to alleviate a key problem of the doubly fed induction generator—severe thermal cycling caused during operation near synchronous speed.
Journal Article•10.1002/SDTP.10466•
37.1: Distinguished Paper : A Novel Blue Phase Liquid Crystal Display Applying Wall-Electrode and High Driving Voltage Circuit

[...]

Cheng Yeh Tsai1, Fang Cheng Yu1, Yi-Fen Lan1, Pu Jung Huang1, Szu Yu Lin1, Yi Ting Chen1, Tzu I. Tsao1, Chia Ting Hsieh1, Bo Shiang Tseng1, Chia-Wei Kuo1, Ching Huan Lin1, Chien Chih Kuo1, Chung Hung Chen1, Hsiang Yuan Hsieh1, Chin Tang Chuang1, Norio Sugiura1, Chih-Lung Lin2, Mao Hsun Cheng2 •
AU Optronics1, National Cheng Kung University2
1 Jun 2015
TL;DR: In this paper, a novel polymer-stabilized blue phase liquid crystal display (PS-BPLCD) using an optimized BPLC for new wall-electrode cell structure and also new driving method has been developed.
Abstract: A novel polymer-stabilized blue phase liquid crystal display (PS-BPLCD) using an optimized BPLC for new wall-electrode cell structure and also new driving method has been developed. Those technologies enable BPLCDs to apply conventional source driver IC in AMLCD applications. This novel PS-BPLCDs successfully achieved high-performance LCDs with over 2 times higher optoelectronic properties and a superior reliability.
Proceedings Article•10.1109/ICPE.2015.7167828•
Coordinated secondary control for balanced discharge rate of energy storage system in islanded microgrids

[...]

Yajuan Guan1, Josep M. Guerrero1, Juan C. Vasquez1•
Aalborg University1
1 Jun 2015
TL;DR: In this article, a coordinated secondary controller based on a novel autonomous currents sharing control strategy for balanced discharge rate of energy storage systems in islanded microgrid (MG) is proposed, which is able to regulate the output power of distributed generating (DG) systems according to their state-of-charge by adjusting the virtual resistances of their voltage controlled inverters.
Abstract: A coordinated secondary control based on a novel autonomous currents sharing control strategy for balanced discharge rate of energy storage systems in islanded microgrid (MG) is proposed in this paper. The coordinated secondary controller is able to regulate the output power of distributed generating (DG) systems according to their state-of-charge by adjusting the virtual resistances of their voltage controlled inverters. This controller can not only provide the faster response and accurate output current sharing control, but also avoid the potential operation failure resulting from the over current and unintentional outage of DGs. Thus, the stability and reliability of islanded MG can be improved. The eigenvalues and root locus with the proposed controller are presented to design the parameters as well as analyzing the system stability. Simulation results based on Matlab/simulink are presented in order to verify the effectiveness of the proposed controller.
Journal Article•10.1016/J.IJHYDENE.2015.01.154•
Advanced reliability analysis of Polymer Electrolyte Membrane Fuel Cells using Petri-Net analysis and fuel cell modelling techniques

[...]

Michael Whiteley1, Ashley Fly1, Johanna M. Leigh1, Sarah J. Dunnett1, Lisa M. Jackson1 •
Loughborough University1
21 Sep 2015-International Journal of Hydrogen Energy
TL;DR: Petri-Net simulation and fuel cell modelling techniques have been adopted to develop an accurate degradation model and this work will improve previous fuel cell reliability studies by taking into consideration; operating parameters, fuel cell voltage based on demand and dependencies between failure modes.
Proceedings Article•10.1109/IEMDC.2015.7409188•
Overall assessments of dual inverter open winding drives

[...]

Bo Wang1, G. Localzo2, G. El Murr1, Jiabin Wang1, Antonio Griffo1, Chris Gerada2, Tom Cox2 •
University of Sheffield1, University of Nottingham2
10 May 2015
TL;DR: In this paper, the reliability of the dual inverter open winding drive (DIOWD) topologies aiming for high speed and/or safety critical applications are evaluated using analytical methods, including operation characteristics, VA ratings, efficiencies, harmonic distortion factors (HDF), and reliability.
Abstract: Dual inverter open winding drive (DIOWD) has several advantages over standard 3 phase drive such as multilevel voltage output, lower dc link voltage, high efficiency and better fault tolerant capability. In this paper three DIOWD topologies aiming for high speed and/or safety critical applications are evaluated. Their operation characteristics, VA ratings, efficiencies, harmonic distortion factors (HDF) are quantitatively compared using analytical methods. The utilization of dual inverters provides fault tolerant capabilities for the drive. However, the doubled number of devices increases the risk of single-point failure. Finally, the reliability of the drives is assessed by Markov chain technique. The results show that the DIOWD with two power supplies exhibits low HDF and high efficiency; it also offers better fault tolerant capability and enhanced reliability, thereby being more attractive for both high speed and high reliability applications. While the DIOWD with single power supply and the DIOWD with a power supply and a floating capacitor can be utilized for high speed drives with reduced dc link voltage.
Journal Article•10.1109/TPWRS.2014.2354638•
On Improving Reliability of Shipboard Power System

[...]

Ben Stevens1, Anamika Dubey1, Surya Santoso1•
University of Texas at Austin1
01 Jul 2015-IEEE Transactions on Power Systems
TL;DR: In this article, a shipboard electrical distribution system, a network topology based on the breaker-and-a-half scheme is shown to confer greater reliability than equivalent distribution topologies based on ring bus and double bus, double breaker designs.
Abstract: Distribution system reliability, defined by the expected frequency and duration of load service interruptions caused by component failures, is shown to be dependent on the topology of the distribution network, as well as on the relative placement of loads and generators within the system. In a shipboard electrical distribution system, a network topology based on the breaker-and-a-half scheme is shown to confer greater reliability than equivalent distribution topologies based on the ring bus and double bus, double breaker designs. The overall service interruption rate in the breaker-and-a-half topology is 17.8% less than that in the ring bus topology and 40.0% less than that in the double bus, double breaker topology. Further, an optimized equipment placement configuration is algorithmically identified for the loads and generators within the breaker-and-a-half distribution network, further increasing reliability. The optimal equipment placement decreases the overall system interruption rate by 0.54%. The paper also determines an optimal location for additional in-feeds that should be connected to the ship's most critical loads so that maximum benefits to service reliability are obtained.
Journal Article•10.1016/J.MOEM.2016.03.002•
Problems of reliability of electronic components

[...]

Vyacheslav A. Kharchenko1•
Russian Academy of Sciences1
01 Sep 2015-Modern Electronic Materials
TL;DR: In this paper, the problem of increasing the reliability of electronic components (EC) used for the fabrication of high-tech products is addressed based on analysis of published data and two main ways of solving the problem are considered.
Journal Article•10.1109/ACCESS.2015.2404812•
Reliability and Failure Modes of Solid-State Lighting Electrical Drivers Subjected to Accelerated Aging

[...]

Pradeep Lall1, Peter Sakalaukus1, Lynn Davis2•
Electronics Research Center1, RTI International2
19 Feb 2015-IEEE Access
TL;DR: An investigation of an off-the-shelf solid-state lighting device with the primary focus on the accompanied light-emitting diode (LED) electrical driver (ED) has been conducted and a comparative analysis has been conduct between the 85/85 accelerated test data and a previously published high-temperature storage life accelerated test of 135 °C.
Abstract: An investigation of an off-the-shelf solid-state lighting device with the primary focus on the accompanied light-emitting diode (LED) electrical driver (ED) has been conducted. A set of 10 EDs were exposed to temperature humidity life testing of 85% RH and 85 °C (85/85) without an electrical bias per the JEDEC standard JESD22-A101C in order to accelerate the ingress of moisture into the aluminum electrolytic capacitor (AEC) and the EDs in order to assess the reliability of the LED drivers for harsh environment applications. The capacitance and equivalent series resistance for each AEC inside the ED were measured using a handheld LCR meter as possible leading indications of failure. The photometric quantities of a single pristine light engine were monitored in order to investigate the interaction between the light engine and the EDs. These parameters were used in assessing the overall reliability of the EDs. In addition, a comparative analysis has been conducted between the 85/85 accelerated test data and a previously published high-temperature storage life accelerated test of 135 °C. The results of the 85/85 acceleration test and the comparative analysis are presented in this paper.
Journal Article•10.1109/TVLSI.2014.2357756•
Microprocessor Aging Analysis and Reliability Modeling Due to Back-End Wearout Mechanisms

[...]

Chang-Chih Chen1, Linda Milor1•
Georgia Institute of Technology1
01 Oct 2015-IEEE Transactions on Very Large Scale Integration Systems
TL;DR: A framework that contains modules for back-end time-dependent dielectric breakdown, electromigration, and stress-induced voiding is proposed to analyze circuit layout geometries and interconnects to estimate state-of-the-art microprocessor lifetime due to each mechanism.
Abstract: Back-end wearout mechanisms are major reliability concerns for modern microprocessors. In this paper, a framework that contains modules for back-end time-dependent dielectric breakdown, electromigration, and stress-induced voiding is proposed to analyze circuit layout geometries and interconnects to estimate state-of-the-art microprocessor lifetime due to each mechanism. Our methodology incorporates the detailed electrical stress temperature, linewidth, and cross-sectional areas of each interconnect/via within the microprocessor system. Different workloads are considered to evaluate aging effects in single-core microprocessors running applications with realistic use conditions.
Journal Article•10.1115/1.4031523•
Effect of Intermetallic Compounds on the Thermomechanical Fatigue Life of Three-Dimensional Integrated Circuit Package Microsolder Bumps: Finite Element Analysis and Study

[...]

Soud Farhan Choudhury1, Leila Ladani1•
University of Connecticut1
01 Dec 2015-Journal of Electronic Packaging
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