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  3. Reliability (semiconductor)
  4. 2014
Showing papers on "Reliability (semiconductor) published in 2014"
Journal Article•10.1109/JESTPE.2013.2290282•
Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics

[...]

Huai Wang1, Marco Liserre2, Frede Blaabjerg1, Peter de Place Rimmen, John B. Jacobsen, Thorkild Kvisgaard, Jorn Landkildehus •
Aalborg University1, University of Kiel2
01 Mar 2014-IEEE Journal of Emerging and Selected Topics in Power Electronics
TL;DR: In this article, the three major aspects of power electronics reliability are discussed, respectively, which cover physics-of-failure analysis of critical power electronic components, state-ofthe-art design for reliability process and robustness validation, and intelligent control and condition monitoring to achieve improved reliability under operation.
Abstract: Power electronics has progressively gained an important status in power generation, distribution, and consumption. With more than 70% of electricity processed through power electronics, recent research endeavors to improve the reliability of power electronic systems to comply with more stringent constraints on cost, safety, and availability in various applications. This paper serves to give an overview of the major aspects of reliability in power electronics and to address the future trends in this multidisciplinary research direction. The ongoing paradigm shift in reliability research is presented first. Then, the three major aspects of power electronics reliability are discussed, respectively, which cover physics-of-failure analysis of critical power electronic components, state-of-the-art design for reliability process and robustness validation, and intelligent control and condition monitoring to achieve improved reliability under operation. Finally, the challenges and opportunities for achieving more reliable power electronic systems in the future are discussed.

682 citations

Journal Article•10.1109/TPEL.2014.2304561•
Survey on Fault-Tolerant Techniques for Power Electronic Converters

[...]

Wenping Zhang1, Dehong Xu1, Prasad Enjeti2, Haijin Li1, Joshua Hawke2, Harish S. Krishnamoorthy2 •
Zhejiang University1, Texas A&M University2
04 Feb 2014-IEEE Transactions on Power Electronics
TL;DR: In this paper, a comprehensive review of conventional fault-tolerant techniques regarding power electronic converters in case of power semiconductor device failures is presented, which can be classified into four categories based on the type of hardware redundancy unit: switch-level, leglevel, module-level and system-level.
Abstract: With wide-spread application of power electronic converters in high power systems, there has been a growing interest in system reliability analysis and fault-tolerant capabilities. This paper presents a comprehensive review of conventional fault-tolerant techniques regarding power electronic converters in case of power semiconductor device failures. These techniques can be classified into four categories based on the type of hardware redundancy unit: switch-level, leg-level, module-level, and system-level. Also, various fault-tolerant methods are assessed according to cost, complexity, performance, etc. The intent of this review is to provide a detailed picture regarding the current landscape of research in power electronic fault-handling mechanisms.

577 citations

Journal Article•10.7567/JJAP.53.100210•
Recent progress of GaN power devices for automotive applications

[...]

Tetsu Kachi
05 Sep 2014-Japanese Journal of Applied Physics
TL;DR: In this article, a lateral GaN power device with a blocking voltage of 600 V and a vertical GaN Power Switching Device with a block voltage of 1200 V are proposed for medium power applications for sub-systems and high-power applications for the drive of main motors, respectively.
Abstract: Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs). To improve the efficiency of HVs and EVs, better performance characteristics than those of Si power devices, for example, lower on-resistance, higher speed, higher operation temperature, are required for the power devices. GaN power devices are promising candidates for satisfying the requirements. A lateral GaN power device with a blocking voltage of 600 V and a vertical GaN power device with a blocking voltage of 1200 V are suitable for medium power applications for sub systems and high-power applications for the drive of main motors, respectively. Power device applications in HVs and EVs and the current status of the GaN power device are presented. The reliability of the GaN power device is also discussed.

315 citations

Journal Article•10.1109/TIA.2014.2305804•
Advanced High-Power-Density Interior Permanent Magnet Motor for Traction Applications

[...]

Ayman El-Refaie1, James Pellegrino Alexander1, Steven Galioto1, Patel Bhageerath Reddy1, Kum-Kang Huh1, Peter de Bock1, Xiochun Shen1 •
General Electric1
19 Feb 2014-IEEE Transactions on Industry Applications
TL;DR: In this paper, the authors provide details of the design, analysis, and testing of an advanced interior permanent magnet (PM) machine that was developed to meet the FreedomCAR 2020 specifications.
Abstract: Electric drive systems, which include electric machines and power electronics, are a key enabling technology for advanced vehicle propulsion systems that reduce the petroleum dependence of the ground transportation sector. To have significant effect, electric drive technologies must be economical in terms of cost, weight, and size while meeting performance and reliability expectations. This paper will provide details of the design, analysis, and testing of an advanced interior permanent magnet (PM) machine that was developed to meet the FreedomCAR 2020 specifications. The 12-slot/10-pole machine has segmented stator structure equipped with fractional-slot nonoverlapping concentrated windings. The rotor has a novel spoke structure/assembly. Several prototypes with different thermal management schemes have been built and tested. This paper will cover the test results for all these prototypes and highlight the tradeoffs between the various schemes. Due to the high machine frequency (~1.2 kHz at the top speed), detailed analysis of various loss components and ways to reduce them will be presented. In addition, due to the high coolant inlet temperature and the fact that the machine is designed to continuously operate at 180 °C, detailed PM demagnetization analysis will be presented. The key novelty in this paper is the advanced rotor structure and the thermal management schemes.

259 citations

Journal Article•10.1109/TSTE.2013.2288083•
Stochastic Performance Assessment and Sizing for a Hybrid Power System of Solar/Wind/Energy Storage

[...]

A. Arabali1, M. Ghofrani1, M. Etezadi-Amoli1, M. S. Fadali1•
University of Nevada, Reno1
01 Apr 2014-IEEE Transactions on Sustainable Energy
TL;DR: In this article, a stochastic framework for optimal sizing and reliability analysis of a hybrid power system including the renewable resources and energy storage system is proposed, where a pattern search-based optimization method is used in conjunction with a sequential Monte Carlo simulation (SMCS) to minimize the system cost and satisfy the reliability requirements.
Abstract: This paper proposes a stochastic framework for optimal sizing and reliability analysis of a hybrid power system including the renewable resources and energy storage system. Uncertainties of wind power, photovoltaic (PV) power, and load are stochastically modeled using autoregressive moving average (ARMA). A pattern search-based optimization method is used in conjunction with a sequential Monte Carlo simulation (SMCS) to minimize the system cost and satisfy the reliability requirements. The SMCS simulates the chronological behavior of the system and calculates the reliability indices from a series of simulated experiments. Load shifting strategies are proposed to provide some flexibility and reduce the mismatch between the renewable generation and heating ventilation and air conditioning loads in a hybrid power system. Different percentages of load shifting and their potential impacts on the hybrid power system reliability/cost analysis are evaluated. Using a compromise-solution method, the best compromise between the reliability and cost is realized for the hybrid power system.

247 citations

Journal Article•10.1109/MIE.2014.2312427•
Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods

[...]

Nick Baker1, Marco Liserre1, Laurent Dupont2, Yvan Avenas3•
Aalborg University1, IFSTTAR2, University of Grenoble3
16 Sep 2014-IEEE Industrial Electronics Magazine
TL;DR: In this paper, the reliability aspects of power electronic techniques are discussed in the context of high-efficiency power conversion for adjustable-speed drives, power quality correction, renewable energy systems, energy storage systems, and electric vehicles.
Abstract: Power electronic systems play an increasingly important role in providing high-efficiency power conversion for adjustable-speed drives, power-quality correction, renewable-energy systems, energy-storage systems, and electric vehicles. However, they are often presented with demanding operating environments that challenge the reliability aspects of power electronic techniques. For example, increasingly thermally stressful environments are seen in applications such as electric vehicles, where ambient temperatures under the hood exceed 150 °C, while some wind turbine applications can place large temperature cycling conditions on the system. On the other hand, safety requirements in the aerospace and automotive industries place rigorous demands on reliability.

226 citations

Journal Article•10.1016/J.MICROREL.2014.02.002•
Tunnel FET technology: A reliability perspective

[...]

Suman Datta, Huichu Liu, Vijaykrishnan Narayanan
01 May 2014-Microelectronics Reliability
TL;DR: This review paper focuses on the reliability issues such as soft-error, electrical noise and process variation, and their impact on TFET based circuit performance compared to sub-threshold CMOS.

205 citations

Book Chapter•10.1016/B978-0-08-096532-1.01002-5•
Advances in Fused Deposition Modeling

[...]

Syed H. Masood1•
Swinburne University of Technology1
1 Jan 2014
TL;DR: An overview of the basic process, materials, and capabilities of the Stratasys FDM technology, and also a comprehensive review of research and development work undertaken using the FDM process since its inception over the past two decades is presented in this paper.
Abstract: Fused deposition modeling (FDM) is one of the most widely used additive manufacturing processes for fabricating prototypes and functional parts in common engineering plastics. The process is based on the extrusion of heated feedstock plastic filaments through a nozzle tip to deposit layers onto a platform to build parts layer by layer directly from a digital model of the part. The simplicity, reliability, and affordability of the FDM process have made the additive manufacturing technology widely recognized and adopted by industry, academia, and consumers. The FDM process has also been widely used by research and development sectors to improve the process, develop new materials, and apply the FDM systems in a wide range of engineering applications. This chapter describes an overview of the basic process, materials, and capabilities of the Stratasys FDM technology, and also presents a comprehensive review of research and development work undertaken using the FDM process since its inception over the past two decades.

182 citations

Journal Article•10.1109/TPEL.2014.2359015•
Power Cycle Testing of Power Switches: A Literature Survey

[...]

Lakshmi GopiReddy1, Leon M. Tolbert1, Burak Ozpineci2•
University of Tennessee1, Oak Ridge National Laboratory2
18 Sep 2014-IEEE Transactions on Power Electronics
TL;DR: In this article, a comparison of different power cycling tests based on the failures, duration, test circuits, and monitored electrical parameters is presented, and the results show that the main failures in high power semiconductors are caused by thermomechanical fatigue.
Abstract: Reliability of power converters and lifetime prediction has been a major topic of research in the last few decades, especially for traction applications. The main failures in high power semiconductors are caused by thermomechanical fatigue. Power cycling and temperature cycling are the two most common thermal acceleration tests used in assessing reliability. The objective of this paper is to study the various power cycling tests found in the literature and to develop generalized steps in planning application specific power cycling tests. A comparison of different tests based on the failures, duration, test circuits, and monitored electrical parameters is presented.

180 citations

Journal Article•10.1109/TSG.2013.2278482•
Power System Reliability Impact of Energy Storage Integration With Intelligent Operation Strategy

[...]

Yixing Xu1, Chanan Singh1•
Texas A&M University1
01 Mar 2014-IEEE Transactions on Smart Grid
TL;DR: An intelligent operation strategy for energy storage which improves reliability considering the renewable energy integration is presented and a bulk power system reliability evaluation framework is proposed to study the reliability impact brought by the energy storage integration and operation.
Abstract: Electric power industry is experiencing a movement from the existing conventional electric grid to a more reliable, efficient and secure smart grid. In order to achieve these goals, components such as energy storage will be included, and potentially in large scale. Many feasible applications of energy storage in power systems have been investigated. The major benefits of energy storage include electric energy time-shift, frequency regulation and transmission congestion relief. In this paper, we focus on the reliability improvement of the bulk power system brought by the utilization of energy storage in the local distribution systems integrated with renewable energy generation. An intelligent operation strategy for energy storage which improves reliability considering the renewable energy integration is presented. The smart grid communication and control network is utilized to implement the proposed energy storage operation. A bulk power system reliability evaluation framework is proposed to study the reliability impact brought by the energy storage integration and operation. A detailed case study and sensitivity analysis is performed to demonstrate the effectiveness of the presented operation strategy and evaluation framework, and to provide valuable insights on the power system reliability impact derived from the energy storage integration.

151 citations

Journal Article•10.1016/J.MICROREL.2014.07.019•
Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses

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You Wang1, You Wang2, Yue Zhang2, Erya Deng2, Jacques-Olivier Klein2, Lirida Alves de Barros Naviner1, Weisheng Zhao2, Weisheng Zhao3 •
Télécom ParisTech1, Centre national de la recherche scientifique2, Beihang University3
01 Sep 2014-Microelectronics Reliability
TL;DR: A compact model of MTJ with STT stochastic behavior is proposed, in which technical variations and temperature evaluation are properly integrated and its accurate performances allow a more realistic reliability analysis involving the influences of ambient environment and technical process.
Journal Article•10.1109/MIE.2014.2311829•
Improving Power Converter Reliability: Online Monitoring of High-Power IGBT Modules

[...]

Pramod Ghimire1, Angel Ruiz de Vega1, Szymon Beczkowski1, Bjørn Rannestad1, Stig Munk-Nielsen1, Paul Bach Thøgersen1 •
Aalborg University1
17 Sep 2014-IEEE Industrial Electronics Magazine
TL;DR: In this article, the authors proposed a new method to measure the collector-emitter voltage of a high-power IGBT module during converter operation, which may play a vital role in improving the reliability of the power converters.
Abstract: The real-time junction temperature monitoring of a high-power insulated-gate bipolar transistor (IGBT) module is important to increase the overall reliability of power converters for industrial applications. This article proposes a new method to measure the on-state collector-emitter voltage of a high-power IGBT module during converter operation, which may play a vital role in improving the reliability of the power converters. The measured voltage is used to estimate the module average junction temperature of the high and low-voltage side of a half-bridge IGBT separately in every fundamental cycle of the current by calibrating them at load current. The measurement is very accurate and also measures the voltage at the middle of a pulse-width modulation (PWM) switching. A major objective is that this method is designed to be implemented in real applications. The performance of this technique is measured in a wind power converter at a low fundamental frequency. To illustrate more, the test method as well as the performance of the measurement circuit are also presented. This measurement is also useful to indicate failure mechanisms such as bond wire lift-off and solder layer degradation. The measurements of and rise in the junction temperature after five million cycles of normal operation of the converter are also presented.
Book•
Semiconductor Memories Technology, Testing And Reliability

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Ashok K. Sharma
1 Jan 2014
TL;DR: Semiconductor Memories as mentioned in this paper provides in-depth coverage in the areas of design for testing, fault tolerance, failure modes and mechanisms, and screening and qualification methods including memory cell structures and fabrication technologies.
Abstract: Semiconductor Memories provides in-depth coverage in the areas of design for testing, fault tolerance, failure modes and mechanisms, and screening and qualification methods including.* Memory cell structures and fabrication technologies.* Application-specific memories and architectures.* Memory design, fault modeling and test algorithms, limitations, and trade-offs.* Space environment, radiation hardening process and design techniques, and radiation testing.* Memory stacks and multichip modules for gigabyte storage.
Proceedings Article•10.1109/ISCAS.2014.6865541•
Design of SRAM PUF with improved uniformity and reliability utilizing device aging effect

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Achiranshu Garg1, Tony Tae-Hyoung Kim1•
Nanyang Technological University1
1 Jun 2014
TL;DR: The proposed technique maintains the uniformity of SRAM-PUF by controlling the polarity of the aging in SRAM arrays by injecting aging to theSRAM arrays after achieving target uniformity.
Abstract: SRAM Physical Unclonable Function (PUF) makes use of efficient silicon fabrication process where duplication of exact replica devices is difficult. One of the major issues with SRAM-PUF is the reliability and uniformity of the start-up pattern with environmental fluctuations. This paper presents a technique for improving uniformity (distribution of 1's & 0's) and reliability (variations in power-up patterns) of SRAM-PUF utilizing aging effects (mainly NBTI). The proposed technique maintains the uniformity of SRAM-PUF by controlling the polarity of the aging in SRAM arrays. The reliability is controlled by further injecting aging to the SRAM arrays after achieving target uniformity.
Proceedings Article•10.1109/IRPS.2014.6860642•
Self-heating effect in FinFETs and its impact on devices reliability characterization

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Shou-En Liu, J. S. Wang, Y. R. Lu, D. S. Huang, C. F. Huang, W. H. Hsieh, J. H. Lee, Y. S. Tsai, J.R. Shih, Y.-H. Lee, K. Wu 
1 Jun 2014
TL;DR: The impact of self-heating effect (SHE) on device reliability characterization, such as BTI, HCI, and TDDB, is extensively examined in this paper.
Abstract: The impact of self-heating effect (SHE) on device reliability characterization, such as BTI, HCI, and TDDB, is extensively examined in this work. Self-heating effect and its impact on device level reliability mechanisms is carefully studied, and an empirical model for layout dependent SHE is established. Since the recovery effect during NBTI characterization is found sensitive to self-heating, either changing V T shift as index or adopting μs-delay measurement system is proposed to get rid of SHE influence. In common HCI stress condition, the high drain stress bias usually leads to high power or self-heating, which may dramatically under-estimate the lifetime extracted. The stress condition V g = 0.6~0.8V d is suggested to meet the reasonable operation power and self-heating induced temperature rising. Similarly, drain-bias dependent TDDB characteristics are also under-estimated due to the existence of SHE and need careful calibration to project the lifetime at common usage bias.
Proceedings Article•10.1109/CONECCT.2014.6740182•
The effect of temperature on the reliability of electronic components

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Vasudevan Lakshminarayanan, Natarajan Sriraam1•
M. S. Ramaiah Institute of Technology1
17 Feb 2014
TL;DR: In this article, the effect of temperature on the reliability of components used in typical electronic systems is discussed with illustrative examples for reliability calculations, and it is shown that suitable methods can be applied to minimize failures of electronic components due to thermal stresses.
Abstract: Reliability of electronic systems for operating in all types of environments has become a necessity. The progressive miniaturization in electronics, packaging of a large number of active devices per unit area of the component due to higher integration levels, higher power density per unit area, need for low- cost and reliable products, and the wide range of applications in specialized commercial, avionics, underground oil exploration, automotive, and other high temperature environments besides the normal commercial applications demands a high degree of reliable operation of the electronics under harsh environmental conditions. In such situations, reliability has to be built into the system by design, choice of suitable components, packaging and cooling techniques. This paper discusses the effect of temperature on the reliability of components used in typical electronic systems. Various models based on the temperature principle are discussed with illustrative examples for reliability calculations.Further, it is shown that by using the principle of cause - effect relationship, suitable methods can be applied to minimize failures of electronic components due to thermal stresses.
Proceedings Article•10.1109/WIPDA.2014.6964641•
Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

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Brett Hull1, Scott Allen1, Qingchun Zhang1, Donald A. Gajewski1, Vipindas Pala1, Jim Richmond1, Sei-Hyung Ryu1, Michael J. O'Loughlin1, E. Van Brunt1, Lin Cheng1, Albert A. Burk1, Jeffrey Casady1, David Grider1, John W. Palmour1 •
Cree Inc.1
24 Nov 2014
TL;DR: In this paper, reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs was presented, and a wide range of blocking voltages, from 900 V to 15 kV, was also demonstrated.
Abstract: In this paper, we present reliability and stability data based on a large body of data accumulated from high volume production of SiC power MOSFETs. The SiC MOSFETs (Gen2, C2M) showed excellent body diode and threshold voltage stability after 1000 hours of accelerated stressing tests. Results from next generation SiC power MOSFET development efforts are also presented. A significant reduction in specific on-resistance was demonstrated, and a wide range of blocking voltages, from 900 V to 15 kV, has also been demonstrated.
Journal Article•10.1109/TIA.2014.2319587•
Reliability Analysis and Performance Degradation of a Boost Converter

[...]

Mohammed Khorshed Alam1, Faisal Khan1•
University of Utah1
23 Apr 2014-IEEE Transactions on Industry Applications
TL;DR: In this article, the authors present a reliability analysis for a boost converter, although this method could be used to any power converter being operated using closed-loop controls. But, the reliability of the boost converter having control loops degrades with time, and this paper presents a method to calculate time-varying reliability of a boosting converter as a function of characteristic variations in different components in the circuit.
Abstract: In general, power converters are operated in closed-loop systems, and any characteristic variations in one component will simultaneously alter the operating point of other components, resulting in a shift in overall reliability profile. This interdependence makes the reliability of a converter a complex function of time and operating conditions; therefore, the application may demand periodic replacement of converters to avoid downtime and maintenance cost. By knowing the present state of health and the remaining life of a power converter, it is possible to reduce the maintenance cost for expensive high-power converters. This paper presents a reliability analysis for a boost converter, although this method could be used to any power converter being operated using closed-loop controls. Through the conducted study, it is revealed that the reliability of a boost converter having control loops degrades with time, and this paper presents a method to calculate time-varying reliability of a boost converter as a function of characteristic variations in different components in the circuit. In addition, the effects of operating and ambient conditions have been included in the reliability model as well. It was found that any increase in the ON-state resistance of the MOSFET or equivalent series resistance of the output capacitor decreases the overall reliability of the converter. However, any variation in the capacitance has a more complex impact on the converter's reliability. This paper is a step forward to the power-converter reliability analysis because the cumulative effect of multiple degraded components has been considered in the reliability model.
Book•
Real-time stability in power systems : techniques for early detection of the risk of blackout

[...]

Savu Crivat Savulescu
1 Jan 2014
TL;DR: In this paper, the relationship between Power System Dynamic Equilibrium, Load-Flow, and Operating Point Stability is investigated and real-time implementation of Dimo's Stability Analysis Technique is presented.
Abstract: Relationships between Power System Dynamic Equilibrium, Load-Flow, and Operating Point Stability.- Fast Assessment of the Distance to Stability.- Accuracy Testing and Real-Time Implementation of Dimo's Stability Analysis Technique.- Emergency Monitoring and Corrective Control of Voltage Instability.- On-Line Voltage Security Assessment.- Critical Issues for Successful On-Line Security Assessment.- The Case for Using Wide-Area Control Techniques to Improve the Reliability of the Electric Power Grid.- Preventive and Emergency Control of Power Systems.- Sensitivity Analysis of Dynamic Stability Indicators in Power Systems.- Model Predictive Control of Electric Power Systems under Emergency Conditions.- The Role of Power System Visualization in Enhancing Power System Security.- Comprehensive approach to Real-Time Stability.- Transient Stability in Real-Time Implementations.
Proceedings Article•10.1109/EPE.2014.6910822•
Review of active thermal and lifetime control techniques for power electronic modules

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Markus Andresen1, Marco Liserre1, Giampaolo Buticchi1•
University of Kiel1
29 Sep 2014
TL;DR: In this article, an overview of active thermal control or lifetime control is presented, with a critical comparison based on a comprehensive reference list, and mission profiles are compared to evaluate the potential of the controllers.
Abstract: Lifetime of power electronics modules can be extended with passive methods (condition monitoring) and active ones. This paper intends to give an overview in the second category, namely active thermal control or lifetime control, offering a critical comparison based on a comprehensive reference list. Mission profiles are compared to evaluate the potential of the controllers.
Journal Article•10.1109/TIA.2014.2319576•
Thermoelectric Cooling for Power Electronics Circuits: Modeling and Active Temperature Control

[...]

Cong Li1, Da Jiao1, Jizhou Jia1, Feng Guo1, Jin Wang1 •
Ohio State University1
23 Apr 2014-IEEE Transactions on Industry Applications
TL;DR: In this paper, a temperature-dependent thermoelectric model which includes both power electronics circuits and TEC device is presented, and both steady-state and small signal analyses can be carried out, and this paper is more focused on the steadystate part.
Abstract: This paper discusses the modeling and application of thermoelectric cooling (TEC) in power electronics circuits. To investigate the benefits and challenges of using TEC, a temperature-dependent thermoelectric model which includes both power electronics circuits and TEC device is presented. With this model, both steady-state and small signal analyses can be carried out, and this paper is more focused on the steady-state part. For the steady-state analysis, the results have identified the allowed operation range which could be used as guidelines for system design. Also, with TEC device, the case temperature and junction temperature of power electronics switches can be dynamically controlled. Therefore, the switches' thermal cycling problem could be alleviated, and the switch lifetime and overall system reliability will be improved. Both simulation and experimental results are presented in this paper to verify the analysis.
Journal Article•10.1016/J.MICROREL.2014.02.001•
Wafer-level hermetic MEMS packaging by anodic bonding and its reliability issues

[...]

Shuji Tanaka1•
Tohoku University1
01 May 2014-Microelectronics Reliability
TL;DR: In this article, the reliability risk factors of high temperature, high voltage and electrochemical O2 generation during anodic bonding are discussed, and electrical interconnections through a hermetic package, i.e. electrical feedthrough, is discussed.
Journal Article•10.1109/TVT.2014.2306093•
Evaluation methodology and control strategies for improving reliability of HEV power electronic system

[...]

Yantao Song1, Bingsen Wang1•
Michigan State University1
19 Feb 2014-IEEE Transactions on Vehicular Technology
TL;DR: A mission-profile-dependent simulation model based on MATLAB for quantitatively assessing the reliability of the electric drivetrain of HEVs takes into consideration the variable driving scenarios, dormant mode, electrical stresses, and thermal stresses and verified the benefits of two proposed control strategies in terms of power losses and reliability.
Abstract: The reliability prediction of hybrid electric vehicles (HEVs) is of paramount importance for planning, design, control, and operation management of vehicles, since it can provide an objective criterion for comparative evaluation of various configurations and topologies and can be used as an effective tool to improve the design and control of the overall system. This paper presents a mission-profile-dependent simulation model based on MATLAB for quantitatively assessing the reliability of the electric drivetrain of HEVs. This model takes into consideration the variable driving scenarios, dormant mode, electrical stresses, and thermal stresses. Therefore, more reliable and accurate prediction of system reliability has been achieved. The methodology is explained in detail, and the results of reliability assessment based on a series HEV are presented. Based on reliability analysis, two control strategies are proposed to increase the mean time to failure of HEV powertrains: 1) variable dc-link voltage control and 2) hybrid discontinuous pulsewidth modulation scheme. These novel control schemes reduce the power losses and thermal stresses of power converters, and consequently, enhance system reliability. Numerical simulation results verify the benefits of two proposed control strategies in terms of power losses and reliability.
Proceedings Article•10.1109/EPE.2014.6911024•
Online junction temperature measurement via internal gate resistance during turn-on

[...]

Nick Baker, Stig Munk-Nielsen, Marco Liserre, Francesco Iannuzzo
1 Aug 2014
TL;DR: In this article, a measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity than alternative TSEPs.
Abstract: A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity (20mV/C or more) than alternative TSEPs.
Journal Article•10.1016/J.MICROREL.2014.07.037•
Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles

[...]

Yan Gang Wang1, Steve Jones1, Andy Dai1, Andy Dai2, Guoyou Liu2, Guoyou Liu1 •
Dynex Semiconductor1, Zhuzhou CSR Times Electric Co., Ltd.2
01 Sep 2014-Microelectronics Reliability
TL;DR: In this article, the authors investigated the reliability enhancement by integrated liquid cooling structure in HEV/EV IGBT module and found that the thermal resistance of junction to heat sink can be reduced more than 50% by direct liquid cooling as eliminating thermal grease layer, so both active and passive temperature swings decrease significantly.
Proceedings Article•10.1109/IRPS.2014.6860629•
Reliability issues in GaN and SiC power devices

[...]

Tetsuzo Ueda1•
Panasonic1
1 Jun 2014
TL;DR: In this paper, the authors reviewed the recent progress of the GaN and SiC power devices developed at Panasonic and reviewed the reliability issues in the conventional transistors, normally off GaN Gate Injection Transistors (GITs) and normally off SiC Diode-integrated MOSFET (DioMOS) free from the degradations.
Abstract: GaN and SiC have been widely investigated for future power switching systems with high efficiencies. So far, prototypes of working transistors using these wide bandgap materials have demonstrated the superior performances suggesting the great potential. Remaining tasks for the commercialization include finding niche applications as entry ones with the well-established reliability. In this paper, recent progress of the GaN and SiC power devices developed at Panasonic is reviewed. After reviewing the reliability issues in the conventional transistors, normally-off GaN Gate Injection Transistors (GITs) and SiC Diode-integrated MOSFET (DioMOS) free from the degradations are presented. These state-of-the-art GaN and SiC devices are very promising for practical applications.
Proceedings Article•10.1109/VARI.2014.6957074•
Reliability challenges in design of memristive memories

[...]

Peyman Pouyan1, Esteve Amat, Antonio Rubio1•
Polytechnic University of Catalonia1
20 Nov 2014
TL;DR: In this article, the memristive mechanisms and reliability concerns existing in memristor memory design are reviewed, and a normal distribution for the resistive distribution of memristors in LRS and HRS state is shown.
Abstract: The demand for highly scalable and low power memory has led to research in emerging technologies and devices. Among these devices, memristors has attracted increased attention as being a promising storage device. However, due to its nano-scale size it faces various types of reliability issues. In this study, we have reviewed the memristive mechanisms and reliability concerns existing in memristor memory design. Then, we have simulated the ionic drift memristor model in presence of the process variability. Next, by considering a normal distribution for the resistive distribution of memristors in LRS and HRS state we have shown the instabilities and probability of failure in read and write procedure of memristive memories, and highlighted the requisite and motivation for the reliability aware memristive circuit design.
Journal Article•10.1016/J.MICROREL.2014.07.082•
Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment

[...]

Thomas Santini1, Thomas Santini2, Sebastien Morand2, Mitra Fouladirad3, Luong Viet Phung1, Florent Miller2, Bruno Foucher2, Antoine Grall3, Bruno Allard1 •
University of Lyon1, Airbus Group2, University of Technology of Troyes3
01 Sep 2014-Microelectronics Reliability
TL;DR: One of the first attempts to use a non-homogeneous gamma process to model the threshold voltage degradation of a commercial SiC MOSFET is proposed and is described as a first step toward prognostic of Remaining Useful Life in embedded power electronics.
Journal Article•10.1541/IEEJJIA.3.192•
Electro-Thermo-Mechanical Analysis of High-Power Press-Pack Insulated Gate Bipolar Transistors under Various Mechanical Clamping Conditions

[...]

Adrian Augustin Hasmasan, Cristian Busca, Remus Teodorescu, Lars Helle1, Frede Blaabjerg •
Vestas1
01 Jan 2014-IEEJ journal of industry applications
TL;DR: In this article, the impact of mechanical clamping conditions on the static thermal distribution among chips in PP IGBTs is investigated, and it is shown that incorrect clamping has a negative impact on their reliability and consequently on the reliability of the wind turbines.
Abstract: With the continuously increasing demand for energy and the limited supply of fossil fuels, renewable power sources are becoming ever more important. Knowing that future energy demand will grow, manufacturers are increasing the size of new wind turbines (WTs) in order to reduce the cost of energy production. The reliability of the components has a large impact on the overall cost of a WT, and press-pack (PP) insulated gate bipolar transistors (IGBTs) could be a good solution for future multi-megawatt WTs because of advantages like high power density and reliability. When used in power converters, PP IGBTs are stacked together with other components in a clamping mechanism in order to ensure electrical and thermal contact. Incorrect mechanical clamping of PP IGBTs has a negative impact on their reliability and consequently on the reliability of the WT. In this study the impact of mechanical clamping conditions on the static thermal distribution among chips in PP IGBTs is investigated.
Journal Article•10.1149/2.013409JSS•
Review of Present Reliability Challenges in Amorphous In-Ga-Zn-O Thin Film Transistors

[...]

Tien-Yu Hsieh1, Ting-Chang Chang2, Ting-Chang Chang1, Te-Chih Chen1, Ming-Yen Tsai1 •
National Sun Yat-sen University1, National Cheng Kung University2
01 Jan 2014-ECS Journal of Solid State Science and Technology
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