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  4. 2012
Showing papers on "Reliability (semiconductor) published in 2012"
Journal Article•10.1016/J.RSER.2011.09.020•
Comparative study of different fuel cell technologies

[...]

Saad Mekhilef1, Rahman Saidur1, Azadeh Safari1•
University of Malaya1
01 Jan 2012-Renewable & Sustainable Energy Reviews
TL;DR: A comparative study of basic design, working principle, applications, advantages and disadvantages of various technologies available for fuel cells is presented in this article, where the results indicate that fuel cell systems have simple design, high reliability, noiseless operation, high efficiency and less environmental impact.
Abstract: Fuel cells generate electricity and heat during electrochemical reaction which happens between the oxygen and hydrogen to form the water. Fuel cell technology is a promising way to provide energy for rural areas where there is no access to the public grid or where there is a huge cost of wiring and transferring electricity. In addition, applications with essential secure electrical energy requirement such as uninterruptible power supplies (UPS), power generation stations and distributed systems can employ fuel cells as their source of energy. The current paper includes a comparative study of basic design, working principle, applications, advantages and disadvantages of various technologies available for fuel cells. In addition, techno-economic features of hydrogen fuel cell vehicles (FCV) and internal combustion engine vehicles (ICEV) are compared. The results indicate that fuel cell systems have simple design, high reliability, noiseless operation, high efficiency and less environmental impact. The aim of this paper is to serve as a convenient reference for fuel cell power generation reviews.

893 citations

Journal Article•10.1016/J.MICROREL.2011.07.063•
Light emitting diodes reliability review

[...]

Moon-Hwan Chang1, Diganta Das1, Prabhakar V. Varde1, Prabhakar V. Varde2, Michael Pecht3, Michael Pecht1 •
University of Maryland, College Park1, Homi Bhabha National Institute2, City University of Hong Kong3
01 May 2012-Microelectronics Reliability
TL;DR: This paper provides the groundwork for an understanding of the reliability issues of LEDs across the supply chain and identifies the relationships between failure causes and their associated mechanisms, issues in thermal standardization, and critical areas of investigation and development in LED technology and reliability.

757 citations

Journal Article•10.1016/J.ELECTACTA.2012.03.057•
Batteries used to Power Implantable Biomedical Devices

[...]

David C. Bock1, Amy C. Marschilok1, Kenneth J. Takeuchi1, Esther S. Takeuchi•
University at Buffalo1
01 Dec 2012-Electrochimica Acta
TL;DR: Battery systems have been developed that provide years of service for implantable medical devices and their treatment of human disease, and some general requirements are common.

294 citations

Journal Article•10.1016/J.MICROREL.2012.06.035•
Failure and reliability analysis of STT-MRAM

[...]

Weisheng Zhao1, Yue Zhang1, Thibaut Devolder1, Jacques-Olivier Klein1, Dafiné Ravelosona1, Claude Chappert1, Pascale Mazoyer2 •
Centre national de la recherche scientifique1, STMicroelectronics2
01 Sep 2012-Microelectronics Reliability
TL;DR: This paper classifies firstly all the possible failures of STT-MRAM into “soft errors” and “hard errors’, and analyzes their impact on the memory reliability, and can find some efficient design solutions to address respectively these two types of errors and improve the reliability of STTs.

255 citations

Journal Article•10.1109/TIE.2011.2175670•
Reliability Analysis and Cost Optimization of Parallel-Inverter System

[...]

Xiaoxiao Yu1, Ashwin M. Khambadkone1•
National University of Singapore1
01 Oct 2012-IEEE Transactions on Industrial Electronics
TL;DR: In this article, the authors derived mathematical models to quantitatively evaluate the reliability of parallel inverters under different topologies and control strategies, and proposed a framework to determine the number of inverters in parallel in terms of reliability and cost optimization.
Abstract: As the penetration of renewable energy resources proliferate, inverters have been employed as interface in distributed power systems To achieve expanded power level and system redundancy, parallel connection of inverters has been widely used This paper derives mathematical models to quantitatively evaluate the reliability of parallel inverters under different topologies and control strategies A framework to determine the number of inverters in parallel in terms of reliability and cost optimization is proposed Sensitivity analysis is carried out to identify the impact of parameter variation on system reliability and total cost At last, power densities of different structures are analyzed for a fair comparison

159 citations

Journal Article•10.1109/TIE.2011.2172170•
Design of a Five-Phase Brushless DC Motor for a Safety Critical Aerospace Application

[...]

Xiaoyan Huang1, A. Goodman1, Chris Gerada1, Youtong Fang2, Qinfen Lu2 •
University of Nottingham1, Zhejiang University2
01 Sep 2012-IEEE Transactions on Industrial Electronics
TL;DR: A five-phase brushless dc motor designed for an electrohydrostatic actuation system (EHA) suited to the thin and optimized wings with fault tolerance and high reliability, compact structure, and low weight is described.
Abstract: This paper describes a five-phase brushless dc (BLDC) motor designed for an electrohydrostatic actuation system (EHA) suited to the thin and optimized wings. The foundation of the design is a motor with fault tolerance and high reliability, compact structure, and low weight. The motor power rating is 12 kW at 12 000 rpm, and a “wet” form of construction is used where hydraulic oil is present in the motor to reduce the number of oil seals of the EHA for enhanced reliability and lifetime. The losses and thermal behavior are evaluated for an optimized design. Fault tolerance for BLDC motors is discussed. A five-phase motor has been manufactured, and test results are presented to validate the design.

130 citations

Journal Article•10.1016/J.ENGSTRUCT.2011.10.017•
Studies on failure of transmission line towers in testing

[...]

N. Prasad Rao1, G. M. Samuel Knight2, S. J. Mohan1, N. Lakshmanan1•
Structural Engineering Research Centre1, College of Engineering, Guindy2
01 Feb 2012-Engineering Structures
TL;DR: In this paper, different types of premature failures observed during full scale testing of transmission line towers at Tower Testing and Research Station, Structural Engineering Research Centre, Chennai are presented. And the reasons discussed in detail.

123 citations

Journal Article•10.1016/J.MICROREL.2011.08.013•
Increasing the reliability of solid state lighting systems via self-healing approaches: A review

[...]

Ugo Lafont, Henk van Zeijl1, Sybrand van der Zwaag•
Delft University of Technology1
01 Jan 2012-Microelectronics Reliability
TL;DR: Self-healing concepts will be proposed to further improve LED’s reliability in order to increase reliability of SSL devices, components presenting self-repairing properties could be implemented.

122 citations

Journal Article•10.7305/AUTOMATIKA.53-2.154•
An Overview of the AC-DC and DC-DC Converters for LED Lighting Applications

[...]

Manuel Arias1, Aitor Vazquez1, Javier Sebastian1•
University of Oviedo1
01 Jun 2012-Automatika: Journal for Control, Measurement, Electronics, Computing and Communications
TL;DR: The main HB-LED characteristics will be explained, highlighting how they influence the design of their power supplies, and the main topologies will be presented from the simplest to the most complex ones, analysing their advantages and disadvantages.
Abstract: High-Brightness Light Emitting Diodes (HB-LEDs) are considered the future trend in lighting not only due to their high efficiency and high reliability, but also due to their other outstanding chara...

115 citations

Journal Article•10.1016/J.IJHYDENE.2012.03.043•
Mechanical reliability and durability of SOFC stacks. Part I: Modelling of the effect of operating conditions and design alternatives on the reliability

[...]

Arata Nakajo1, Fabian Mueller2, Jacob Brouwer2, Jan Van herle1, Daniel Favrat1 •
École Polytechnique Fédérale de Lausanne1, University of California, Irvine2
01 Jun 2012-International Journal of Hydrogen Energy
TL;DR: In this article, the authors present a stack modelling framework that combines thermo-electrochemical models, including degradation and a contact finite-element thermomechanical model, and propose periodic boundary conditions to model the stacking of repeating units.

97 citations

Journal Article•10.1109/TAES.2012.6178060•
Reliability-Oriented Design of Three-Phase Power Converters for Aircraft Applications

[...]

Rolando Burgos, Gang Chen1, Fred Wang2, Dushan Boroyevich, Willem G. Odendaal, J.D. van Wyk •
ON Semiconductor1, University of Tennessee2
05 Apr 2012-IEEE Transactions on Aerospace and Electronic Systems
TL;DR: The proposed procedure takes reliability up-front in the design process of power converters, carrying out the design in three steps by minimizing system complexity and stress, and by the use of the most reliable components, materials, and structures.
Abstract: This paper presents a reliability-oriented design (ROD) procedure for three-phase power converters in aircraft applications. These require the highest reliability levels for all its components-as high as space applications; hence the need to maximize the reliability of three-phase power converters, which are in increasing demand and use in commercial and military aircrafts as a result of the more-electric aircraft (MEA) initiative. Specifically, the proposed procedure takes reliability up-front in the design process of power converters, carrying out the design in three steps. First, the identification of critical system components; second, the assessment of reliability factors such as risk analysis, failure mode analysis, and fishbone diagrams; and third, the actual design, which is carried out by minimizing system complexity and stress, and by the use of the most reliable components, materials, and structures. To this end, reliability models were developed for all critical components based on the military handbook MIL-HDBK-217F, and field and vendor data. For verification purposes, the paper includes the ROD of a 60 kW three-phase power converter for aircraft applications together with experimental results of the prototype constructed.
Journal Article•10.1109/TVLSI.2010.2089072•
Reliability Modeling and Management of Nanophotonic On-Chip Networks

[...]

Zheng Li1, Moustafa Mohamed2, Xi Chen2, Eric Dudley2, Ke Meng3, Li Shang2, Alan R. Mickelson2, Russ Joseph3, Manish Vachharajani2, Brian T. Schwartz, Yihe Sun1 •
Tsinghua University1, University of Colorado Boulder2, Northwestern University3
01 Jan 2012-IEEE Transactions on Very Large Scale Integration Systems
TL;DR: The paper first presents a model predicting the system-level effects of thermal and process variation in nanophotonic networks, and shows how to optimize many-core system performance and reliability by using run-time techniques to compensate for the thermal andprocess variation effects.
Abstract: While transistor performance and energy efficiency have dramatically improved in recent years, electrical interconnect improvements has failed to keep pace. Recent advances in nanophotonic fabrication have made on-chip optics an attractive alternative. However, system integration challenges remain. In particular, the parameters of on-chip nanophotonic structures are sensitive to fabrication-induced process variation and run-time spatial thermal variation across the die. This work addresses the performance and reliability challenges that arise from this sensitivity to variation. The paper first presents a model predicting the system-level effects of thermal and process variation in nanophotonic networks. It then shows how to optimize many-core system performance and reliability by using run-time techniques to compensate for the thermal and process variation effects.
Proceedings Article•10.1109/IECON.2012.6388833•
Design for reliability of power electronic systems

[...]

Wang, Ma, Blaabjerg
1 Jan 2012
Journal Article•10.1016/J.MICROREL.2012.06.079•
Mechanical analysis of press-pack IGBTs

[...]

Tilo Poller1, Thomas Basler1, Magnar Hernes2, Salvatore D'Arco3, Josef Lutz1 •
Chemnitz University of Technology1, SINTEF2, Norwegian University of Science and Technology3
01 Sep 2012-Microelectronics Reliability
TL;DR: Results of FEM simulations on a full 3D model of a press pack IGBT under power-cycling conditions and during the clamping process are presented.
Journal Article•10.1016/J.JMATPROTEC.2011.10.011•
High temperature reliability of lead-free solder joints in a flip chip assembly

[...]

Emeka H. Amalu1, Ndy Ekere1•
University of Greenwich1
01 Feb 2012-Journal of Materials Processing Technology
TL;DR: In this paper, the visco-plastic behavior of solder joints of two models of a flip chip FC48D6.3C457DC mounted on a printed circuit board (PCB) via SnAgCu solder is investigated using Anand's model.
Patent•
Shift register and driving circuit using the same

[...]

Ki Min Son
29 Aug 2012
TL;DR: In this article, a shift register that shows excellent operation reliability with elements less than those of the conventional structure and a gate driving circuit using the shift register are presented, where each of a plurality of shift registers sequentially connected and respectively supplying scan signals to a plurality on a display device.
Abstract: Disclosed are a shift register that shows excellent operation reliability with elements less than those of the conventional structure and a gate driving circuit using the shift register. The gate driving circuit comprises each of a plurality of shift registers sequentially connected and respectively supplying scan signals to a plurality of gate lines of a display device.
High-Reliability low-Ag-ontent Sn-Ag-Cu solder joints for electronics applications

[...]

Suhana Mohd Said
1 May 2012
TL;DR: In this article, the effect of minor alloying elements on the solder joint reliability of low-Ag-content SAC alloys in terms of thermal cycling and drop impact was evaluated.
Abstract: Sn-Ag-Cu (SAC) alloy is currently recognized as the standard lead-free solder alloy for packaging of interconnects in the electronics industry, and high- Ag-content SAC alloys are the most popular choice. However, this choice has been encumbered by the fragility of the solder joints that has been observed in drop testing as well as the high cost of the Ag itself. Therefore, low-Ag-content SAC alloy was considered as a solution for both issues. However, this approach may compromise the thermal-cycling performance of the solders. Therefore, to enhance the thermal-cycling reliability of low-Ag-content SAC alloys without sacrificing their drop-impact performance, alloying elements such as Mn, Ce, Ti, Bi, In, Sb, Ni, Zn, Al, Fe, and Co were selected as additions to these alloys. However, research reports related to these modified SAC alloys are limited. To address this paucity, the present study reviews the effect of these minor alloying elements on the solder joint reliability of low-Ag-content SAC alloys in terms of thermal cycling and drop impact. Addition of Mn, Ce, Bi, and Ni to low-Ag-content SAC solder effectively improves the thermal-cycling reliability of joints without sacrificing the drop-impact performance. Taking into consideration the improvement in the bulk alloy microstructure and mechanical properties, wetting properties, and growth suppression of the interface intermetallic compound (IMC) layers, addition of Ti, In, Sb, Zn, Al, Fe, and Co to low-Ag-content SAC solder has the potential to improve the thermal-cycling reliability of joints without sacrificing the drop-impact performance. Consequently, further investigations of both thermal-cycling and drop reliability of these modified solder joints must be carried out in future work.
Proceedings Article•10.1109/PESGM.2012.6345429•
Capacity value of solar power

[...]

R. Duignan1, Chris Dent2, Andrew Mills3, Nader Samaan4, Michael Milligan5, Andrew Keane1, Mark O'Malley1 •
University College Dublin1, Durham University2, Lawrence Berkeley National Laboratory3, Pacific Northwest National Laboratory4, National Renewable Energy Laboratory5
22 Jul 2012
TL;DR: In this article, the capacity value of solar power is investigated and the differences between wind and solar power are examined, the economic importance of solar capacity value is discussed and other assessments and recommendations are presented.
Abstract: Evaluating the capacity value of renewable energy sources can pose significant challenges due to their variable and uncertain nature. In this paper the capacity value of solar power is investigated. Solar capacity value metrics and their associated calculation methodologies are reviewed and several solar capacity studies are summarized. The differences between wind and solar power are examined, the economic importance of solar capacity value is discussed and other assessments and recommendations are presented.
Proceedings Article•10.1109/ICCD.2012.6378703•
Ring oscillator physical unclonable function with multi level supply voltages

[...]

Shohreh Sharif Mansouri1, Elena Dubrova1•
Royal Institute of Technology1
30 Sep 2012
TL;DR: In this article, a new type of ring oscillator PUF (RO-PUF) is introduced, in which the inverters composing the ring oscillators can be supplied by independent voltages.
Abstract: In this paper we introduce a new type of Ring Oscillator PUF (RO-PUF) in which the inverters composing the ring oscillators can be supplied by independent voltages. This new RO-PUF can improve the reliability of the PUF in case of temperature variations.
Proceedings Article•10.1109/IRPS.2012.6241815•
GaN power device and reliability for automotive applications

[...]

Tetsu Kachi1, Daigo Kikuta1, Tsutomu Uesugi1•
Toyota1
15 Apr 2012
TL;DR: In this paper, the authors present the status of the GaN power device development and reliability of the power device, and also discuss the performance of the device and the reliability of its operation.
Abstract: Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV) systems. For future development of the HV/EV, higher performances than Si power device, for example, low on-resistance, high speed, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Present status of the GaN power device development is presented. Reliability of the GaN power device was also discussed.
Journal Article•10.1016/J.IJHYDENE.2012.03.138•
Experimental study of temperature distribution on anodic surface of MEA inside a PEMFC with parallel channels flow bed

[...]

Hang Guo1, Mao Hai Wang1, Fang Ye1, Chong Fang Ma1•
Beijing University of Technology1
01 Sep 2012-International Journal of Hydrogen Energy
TL;DR: In this article, the temperature distribution on membrane electrode assembly (MEA) surface is very important to the performance, lifetime and reliability of proton exchange membrane fuel cells (PEMFCs), and the measurement of whole temperature fields on anode MEA surface under parallel channels was achieved experimentally at nonhumidification conditions.
Journal Article•10.1109/date.2012.6176603•
DfT schemes for resistive open defects in RRAMs

[...]

Nor Zaidi Haron, Said Hamdioui
1 Mar 2012
TL;DR: The testing of RRAM is different from conventional RAMs and march test cannot guarantee higher defect coverage. To improve defect detection, DfT schemes are needed. Two DfT schemes are proposed and implemented to effectively detect defects that cause RRAM cells to enter an undefined state.
Abstract: Resistive random access memory (RRAM) is one of the universal memory candidates for computer systems. Although RRAM promises many attractive advantages (e.g., huge data storage, smaller form-factor, lower power consumption, non-volatility, etc.), there are many open issues that still need to be solved, especially those related to its quality and reliability. For instance, open defects may cause RRAM cell to enter an undefined state (i.e., somewhere between logic 0 and 1), making it hard to detect during manufacturing test. As a consequence, this may lead to test escapes (quality issue) and field failures (reliability issue). This paper shows - based on defect and circuit simulation - how testing RRAM is different from testing conventional random access memories and how march test cannot guarantee higher defect coverage. The paper then motivates the need of development of special Design-for-Testability (DfT). A concept of a new DfT is then proposed. The concept is further exploited and mapped into two different DfT circuitries: (i) Short Write Time and (ii) Low Write Voltage. Both DfT schemes are implemented and simulated; the simulation results show that defects causing the RRAM cell to enter an undefined state are easily detected.
Journal Article•10.4028/WWW.SCIENTIFIC.NET/MSF.717-720.1073•
SiC MOSFET Reliability Update

[...]

Mrinal K. Das, Sarah K. Haney, Jim Richmond, Anthony Olmedo, Q. Jon Zhang1, Zoltan Ring •
Cree Inc.1
01 May 2012-Materials Science Forum
TL;DR: In this paper, the key reliability results from Time-Dependent Dielectric Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements indicate that the SiC MOSFETs can demonstrate excellent lifetime and stable operation in the field.
Abstract: Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent lifetime and stable operation in the field.
Proceedings Article•10.1109/ICWITS.2012.6417777•
High power, high efficiency E-band GaN amplifier MMICs

[...]

Andrew K. Brown1, Ken Brown1, James C. Chen1, Darin M. Gritters1, Kiuchul Hwang1, Elbert H. Ko1, Nick Kolias1, Shane O'Connor1, Mike Sotelo1 •
Raytheon1
1 Nov 2012
TL;DR: In this article, an advanced high power, high frequency GaN semiconductor process has been used to design high performance E-band power amplifier MMICs demonstrating unprecedented output power, PAE and reliability.
Abstract: An advanced high power, high frequency GaN semiconductor process has been used to design high performance E-band power amplifier MMICs demonstrating unprecedented output power, PAE and reliability. To the author's knowledge, these power amplifier designs demonstrate performance beyond previously published results for E-band power amplifier MMICs.
Journal Article•10.5267/J.IJIEC.2011.12.003•
RAM investigation of coal-fired thermal power plants: A case study

[...]

Dipankar Bose, Samiran Chattopadhyay, Goutam Kumar Bose, Debasis Das Adhikary, Souren Mitra 
01 Apr 2012-International Journal of Industrial Engineering Computations
TL;DR: In this paper, the reliability, availability and maintainability (RAM) characteristics of a 210 MW coal-fired thermal power plant (Unit-2) from a thermal power station in eastern region of India were investigated.
Abstract: Received 28 October 2011 Accepted December, 5 2011 Available online 8 December 2011 Continuous generation of electricity of a power plant depends on the higher availability of its components/equipments. Higher availability of the components/equipments is inherently associated with their higher reliability and maintainability. This paper investigates the reliability, availability and maintainability (RAM) characteristics of a 210 MW coal-fired thermal power plant (Unit-2) from a thermal power station in eastern region of India. Critical mechanical subsystems with respect to failure frequency, reliability and maintainability are identified for taking necessary measures for enhancing availability of the power plant and the results are compared with Unit-1 of the same Power Station. Reliability-based preventive maintenance intervals (PMIs) at various reliability levels of the subsystems are estimated also for performing their preventive maintenance (PM). The present paper highlights that in the Unit-2, Economizer (ECO) & Furnace Wall Tube (FWT) exhibits lower reliability as compared to the other subsystems and Economizer (ECO) & Baffle Wall Tube (BWT) demands more improvement in maintainability. Further, it has been observed that FSH followed Decreasing Failure Rate (DFR) and Economizer (ECO) is the most critical subsystem for both the plants. RAM analysis is very much effective in finding critical subsystems and deciding their preventive maintenance program for improving availability of the power plant as well as the power supply.
Proceedings Article•10.1109/SIPS.2012.11•
Enhancing the Reliability of STT-RAM through Circuit and System Level Techniques

[...]

Yunus Emre1, Chengen Yang1, Ketul B. Sutaria1, Yu Cao1, Chaitali Chakrabarti1 •
Arizona State University1
17 Oct 2012
TL;DR: This paper first study the causes of errors for a single STT memory cell, then proposes a joint technique based on tuning of circuit level parameters and error control coding (ECC) to achieve very high reliability.
Abstract: Spin torque transfer random access memory (STT-RAM) is a promising memory technology because of its fast read access, high storage density, and very low standby power. These memories have reliability issues that need to be better understood before they can be adopted as a mainstream memory technology. In this paper, we first study the causes of errors for a single STT memory cell. We see that process variations and variations in the device geometry affect their failure rate and develop error models to capture these effects. Next we propose a joint technique based on tuning of circuit level parameters and error control coding (ECC) to achieve very high reliability. Such a combination allows the use of weaker ECC with smaller overhead. For instance, we show that by applying voltage boosting and write pulse width adjustment, the error correction capability (t) of ECC can be reduced from t=11 to t=3 to achieve a block failure rate (BFR) of 10^-9.
Proceedings Article•10.1109/APEC.2012.6166095•
Differential power processing architecture for increased energy production and reliability of photovoltaic systems

[...]

Pradeep S. Shenoy1, Brian Johnson1, Philip T. Krein1•
University of Illinois at Urbana–Champaign1
9 Mar 2012
TL;DR: In this paper, a power processing architecture that enables each PV element to operate at its maximum power point (MPP) while only processing a small fraction of the total power produced is presented.
Abstract: Conventional energy conversion architectures in photovoltaic (PV) systems are often forced to trade off conversion efficiency and power production. This paper introduces a power processing architecture that enables each PV element to operate at its maximum power point (MPP) while only processing a small fraction of the total power produced. This is accomplished by providing only the mismatch in the MPP current of a set of series-connected PV elements. The differential power processing architecture increases overall conversion efficiency and overcomes the challenges of unmatched MPPs (due to partial shading, damage, manufacturing tolerances, etc.). Local control of the differential converters enables distributed protection and monitoring. The reliability analysis included in this paper shows significantly increased overall system reliability. Simulation and experimental results are included to demonstrate the benefits of this approach.
Journal Article•10.1016/J.MICROREL.2012.06.152•
Reliability Estimation with Uncertainties Consideration for High Power IGBTs in 2.3 MW Wind Turbine Converter System

[...]

Erik Kostandyan1, Ke Ma1•
Aalborg University1
01 Sep 2012-Microelectronics Reliability
TL;DR: This paper investigates the lifetime of high power IGBTs (insulated gate bipolar transistors) used in large wind turbine applications and the probabilistic and determinist damage models are presented with estimated fatigue lives.
Proceedings Article•10.1145/2429384.2429541•
A thermal and process variation aware MTJ switching model and its applications in soft error analysis

[...]

Peiyuan Wang1, Wei Zhang2, Rajiv V. Joshi3, Rouwaida Kanj4, Yi Chen1 •
University of Pittsburgh1, Nanyang Technological University2, IBM3, American University of Beirut4
5 Nov 2012
TL;DR: A compact switching model for magnetic tunneling junction (MTJ), which is the data storage device in STT-RAM cells, is developed by leveraging the capability to simulate the impacts of thermal and process variations on MTJ switching, and hence, enabling its applications in comprehensive STt-RAM reliability analysis and design optimizations.
Abstract: Spin-transfer torque random access memory (STT-RAM) has recently gained increased attentions from circuit design and architecture societies. Although STT-RAM offers a good combination of small cell size, nanosecond access time and non-volatility for embedded memory applications, the reliability of STT-RAM is severely impacted by device variations and environmental disturbances. In this paper, we develop a compact switching model for magnetic tunneling junction (MTJ), which is the data storage device in STT-RAM cells. By leveraging the capability to simulate the impacts of thermal and process variations on MTJ switching, our model is able to analyze the diverse mechanisms of STT-RAM write operation failures. Besides the impacts of thermal and process variation, the soft error induced by radiation striking on the access transistor is another important threat to the MTJ reliability. It can also be analyzed by using our model. The incurred computation cost of our model is much less than the conventional macro-magnetic model, and hence, enabling its applications in comprehensive STT-RAM reliability analysis and design optimizations.
Journal Article•10.1109/TPEL.2011.2155086•
High-Efficiency High-Reliability Pulsed Power Converters for Industrial Processes

[...]

Fabio Carastro1, Alberto Castellazzi1, Jon Clare1, Patrick Wheeler1•
University of Nottingham1
01 Jan 2012-IEEE Transactions on Power Electronics
TL;DR: In this article, a single-phase resonant converter rated at 1 kV, 250 A (250kW peak power, duty ratio 10%, 25kW average power, AND pulse length 1 ms) was developed.
Abstract: This paper considers monitoring of semiconductor thermal cycling in high-power resonant converters. For the experiments, a dedicated single-phase resonant converter rated at 1 kV, 250 A (250-kW peak power, duty ratio 10%, 25-kW average power, AND pulse length 1 ms) was been developed. This converter represents one phase of a multiphase resonant power supply designed for long-pulse modulation (typically 1-2 ms) when equipped with a suitable output transformer. Pulsed operation is obtained by direct modulation of the high-frequency power supply. The main aim of the study reported here is to develop a methodology to assess performance and reliability issues related to the use of standard commercially available power switch technology, relying on a physics-based multichip insulated gate bipolar transistor (IGBT) structure model, and to experimentally monitor the chip temperature using high-speed thermal imaging, during the pulse, to identify any limitations of the proposed modulator technology. First, an overview of the converter, including its nominal electrical design, is provided. Optimization of the turn-OFF snubber capacitance is performed through a series of experiments, employing calorimetrically measured losses, to determine a value, which minimizes the overall power losses. Accurate calorimetric measurements of the switching losses and infrared measurements of the IGBT surface temperatures during transient operation are presented. Simulations including multichip structures, experimental results, and high-quality chip thermal images are provided to validate the effectiveness of the proposed approaches.
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