Refresh rate

Abstract: A new 3D graphics and multimedia hardware architecture, code-named Talisman, is described which exploits both spatial and temporal coherence to reduce the cost of high quality animation. Individually animated objects are rendered into independent image layers which are composited together at video refresh rates to create the final display. During the compositing process, a full affine transformation is applied to the layers to allow translation, rotation, scaling and skew to be used to simulate 3D motion of objects, thus providing a multiplier on 3D rendering performance and exploiting temporal image coherence. Image compression is broadly exploited for textures and image layers to reduce image capacity and bandwidth requirements. Performance rivaling high-end 3D graphics workstations can be achieved at a cost point of two to three hundred dollars.

Abstract: DRAMs require periodic refresh for preserving data stored in them. The refresh interval for DRAMs depends on the vendor and the de- sign technology they use. For each refresh in a DRAM row, the stored information in each cell is read out and then written back to itself as each DRAM bit read is self-destructive. The refresh pro- cess is inevitable for maintaining data correctness, unfortunately, at the expense of power and bandwidth overhead. The future trend to integrate layers of 3D die-stacked DRAMs on top of a proces- sor further exacerbates the situation as accesses to these DRAMs will be more frequent and hiding refresh cycles in the available slack becomes increasingly difficult. Moreover, due to the implica- tion of temperature increase, the refresh interval of 3D die-stacked DRAMs will become shorter than those of conventional ones. This paper proposes an innovative scheme to alleviate the en- ergy consumed in DRAMs. By employing a time-out counter for each memory row of a DRAM module, all the unnecessary periodic refresh operations can be eliminated. The basic concept behind our scheme is that a DRAM row that was recently read or written to by the processor (or other devices that share the same DRAM) does not need to be refreshed again by the periodic refresh opera- tion, thereby eliminating excessive refreshes and the energy dissi- pated. Based on this concept, we propose a low-cost technique in the memory controller for DRAM power reduction. The simulation results show that our technique can reduce up to 86% of all refresh operations and 59.3% on the average for a 2GB DRAM. This in turn results in a 52.6% energy savings for refresh operations. The overall energy saving in the DRAM is up to 25.7% with an average of 12.13% obtained for SPLASH-2, SPECint2000, and Biobench benchmark programs simulated on a 2GB DRAM. For a 64MB 3D DRAM, the energy saving is up to 21% and 9.37% on an average when the refresh rate is 64 ms. For a faster 32ms refresh rate the maximum and average savings are 12% and 6.8% respectively.

Abstract: Multirate refresh techniques exploit the non-uniformity in retention times of DRAM cells to reduce the DRAM refresh overheads. Such techniques rely on accurate profiling of retention times of cells, and perform faster refresh only for a few rows which have cells with low retention times. Unfortunately, retention times of some cells can change at runtime due to Variable Retention Time (VRT), which makes it impractical to reliably deploy multirate refresh. Based on experimental data from 24 DRAM chips, we develop architecture-level models for analyzing the impact of VRT. We show that simply relying on ECC DIMMs to correct VRT failures is unusable as it causes a data error once every few months. We propose AVATAR, a VRT-aware multirate refresh scheme that adaptively changes the refresh rate for different rows at runtime based on current VRT failures. AVATAR provides a time to failure in the regime of several tens of years while reducing refresh operations by 62%-72%.

Abstract: Technology advancements have enabled the integration of large on-die embedded DRAM (eDRAM) caches. eDRAM is significantly denser than traditional SRAMs, but must be periodically refreshed to retain data. Like SRAM, eDRAM is susceptible to device variations, which play a role in determining refresh time for eDRAM cells. Refresh power potentially represents a large fraction of overall system power, particularly during low-power states when the CPU is idle. Future designs need to reduce cache power without incurring the high cost of flushing cache data when entering low-power states. In this paper, we show the significant impact of variations on refresh time and cache power consumption for large eDRAM caches. We propose Hi-ECC, a technique that incorporates multi-bit error-correcting codes to significantly reduce refresh rate. Multi-bit error-correcting codes usually have a complex decoder design and high storage cost. Hi-ECC avoids the decoder complexity by using strong ECC codes to identify and disable sections of the cache with multi-bit failures, while providing efficient single-bit error correction for the common case. Hi-ECC includes additional optimizations that allow us to amortize the storage cost of the code over large data words, providing the benefit of multi-bit correction at same storage cost as a single-bit error-correcting (SECDED) code (2% overhead). Our proposal achieves a 93% reduction in refresh power vs. a baseline eDRAM cache without error correcting capability, and a 66% reduction in refresh power vs. a system using SECDED codes.