Topic
Quantum well laser
About: Quantum well laser is a research topic. Over the lifetime, 1458 publications have been published within this topic receiving 23480 citations.
Papers published on a yearly basis
Papers
TL;DR: In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.
Abstract: A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D‐QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C.
3,470 citations
TL;DR: In this article, the authors present an overview of topics related to one of the fundamental parameters for semiconductor lasers-the linewidth broadening factor α that describes the coupling between carrier-concentration-induced variations of real and imaginary parts of susceptibility.
Abstract: The objective of this paper is to present an overview of topics related to one of the fundamental parameters for semiconductor lasers-the linewidth broadening factor α that describes the coupling between carrier-concentration-induced variations of real and imaginary parts of susceptibility. After introducing the definition of α and discussing its dependence on carrier concentration, photon energy, and temperature, we give a short historical summary on how the concept of α evolved over the past two decades. This is followed by a discussion of α dependence on device structure in gain-guided and subdimensional lasers (quantum wells and quantum wires). The bulk of the paper is devoted to a detailed review of laser properties influenced by α and of associated methods of estimating the value of α. Results of measurements reported to date are collected and the most reliable methods are indicated.
704 citations
TL;DR: In this article, the authors discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics and reveal that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices.
Abstract: We discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics It is revealed that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices
614 citations
TL;DR: In this paper, it is shown that by using a strained-layer superlattice to form the active region of a quantum-well laser, the threshold current can be reduced and Auger recombination and inter-valence band absorption can be effectively eliminated.
Abstract: It is shown that by using a strained-layer superlattice to form the active region of a quantum-well laser the threshold current can be reduced and Auger recombination and inter-valence band absorption can be effectively eliminated. The band-structure requirements are discussed generally and might be achieved by alternative methods.
584 citations
Book•
[...]
1 Jan 1993
TL;DR: In this article, the origin of Quantum Wells and the Quantum Well Laser is discussed and the effect of intrinsic relaxation on optical spectra is discussed, as well as the properties of Quantum Well Lasers.
Abstract: Foreword: The Origin of Quantum Wells and the Quantum Well Laser. Optical Gain in III-V Bulk and Quantum Well Semiconductors. Intraband Relaxation Effect on Optical Spectra. Multiquantum Well Lasers: Threshold Considerations. Ultra-Low Threshold Quantum Well Lasers. Dynamics of Quantum Well Lasers. Single Quantum Well Ingaasp and Algaas Lasers: A Study of Some Peculiarities. Valence Band Engineering in Quantum Well Lasers. Strained Layer Quantum Well Heterostructure Lasers. Algainp Quantum Well Lasers. Quantum Wire Semiconductor Lasers. Chapter References. Index.
563 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2025 | 1 |
| 2023 | 1 |
| 2021 | 14 |
| 2020 | 18 |
| 2019 | 11 |
| 2018 | 35 |