QFET

Abstract: Power transistor characterized in that it is: A quantum wire array field effect power transistor: A 2-dimensional array of very many densely packed, vertically or up to 30 degrees - even in groups - inclined, embedded in an insulating layer, geometrically parallel and - also in groups - electrically parallel connected true quantum wires ( 1), which connect source and drain contact of the quantum wire array field effect transistor and operate at room temperature, collectively or individually controlled or switched by a time-varying electromagnetic field, so a quasi-static or a dynamic. characterized in that the power transistor consists of: many parallel, straight-beam, and extremely thin true quantum wires (1) exhibiting true 1-dimensional ideal conductivity, these genuine quantum wires being produced by light beam-straight passage of individual high-energy heavy ions through an electrically insulating layer of diamond-like-carbon or SiC or polymer, where these true quantum wires are single walled carbon nanotubes or polyethine-like stretched molecules of the ...