Piezotronics

Abstract: The two-dimensional semiconducting material molybdenum disulphide shows strong piezoelectricity in its single-layered form, suggesting possible applications in nanoscale electromechanical devices for sensing and energy harvesting. Two-dimensional semiconducting materials are the focus of much research effort thanks to their unusual and potentially useful physical properties. Wenzhou Wu and colleagues now confirm theoretical expectations that one such material — molybdenum disulphide — exhibits strong piezoelectricity in its single-layered form. Such a coupling of mechanical and electrical properties suggests possible applications in nanoscale electromechanical devices for sensing and energy harvesting. The piezoelectric characteristics of nanowires, thin films and bulk crystals have been closely studied for potential applications in sensors, transducers, energy conversion and electronics1,2,3. With their high crystallinity and ability to withstand enormous strain4,5,6, two-dimensional materials are of great interest as high-performance piezoelectric materials. Monolayer MoS2 is predicted to be strongly piezoelectric, an effect that disappears in the bulk owing to the opposite orientations of adjacent atomic layers7,8. Here we report the first experimental study of the piezoelectric properties of two-dimensional MoS2 and show that cyclic stretching and releasing of thin MoS2 flakes with an odd number of atomic layers produces oscillating piezoelectric voltage and current outputs, whereas no output is observed for flakes with an even number of layers. A single monolayer flake strained by 0.53% generates a peak output of 15 mV and 20 pA, corresponding to a power density of 2 mW m−2 and a 5.08% mechanical-to-electrical energy conversion efficiency. In agreement with theoretical predictions, the output increases with decreasing thickness and reverses sign when the strain direction is rotated by 90°. Transport measurements show a strong piezotronic effect in single-layer MoS2, but not in bilayer and bulk MoS2. The coupling between piezoelectricity and semiconducting properties in two-dimensional nanomaterials may enable the development of applications in powering nanodevices, adaptive bioprobes and tunable/stretchable electronics/optoelectronics.

Abstract: The lateral and vertical integration of ZnO piezoelectric nanowires allows for voltage and power outputs sufficient to power nanowire-based sensors.

Abstract: Semiconducting zinc oxide nanowires (NWs) and nanobelts (NBs) are a unique group of quasi-one-dimensional nanomaterial. This review mainly focuses on the rational synthesis, structure analysis, novel properties and unique applications of zinc oxide NWs and NBs in nanotechnology. First, we will discuss rational design of synthetic strategies and the synthesis of NWs via vapor phase and chemical growth approaches. Secondly, the vapor–solid process for synthesis of oxide based nanostructures will be described in details. We will illustrate the polar surface dominated growth phenomena, such as the formation of nanosprings, nanorings and nanohelices of single-crystal zinc oxide. Third, we will describe the unique and novel electrical, optoelectronic, field emission, and mechanical properties of individual NWs and NBs. Finally, we will illustrate some novel devices and applications made using NWs as ultra-sensitive chemical and biological nanosensors, solar cell, light emitting diodes, nanogenerators, and nano-piezotronic devices. ZnO is ideal for nanogenerators for converting nano-scale mechanical energy into electricity owing to its coupled piezoelectric and semiconductive properties. The devices designed based on this coupled characteristic are the family of piezotronics, which is a new and unique group of electronic components that are controlled by external forces/pressure.

Abstract: Utilizing the coupled piezoelectric and semiconducting dual properties of ZnO, we demonstrate a piezoelectric field effect transistor (PE-FET) that is composed of a ZnO nanowire (NW) (or nanobelt) bridging across two Ohmic contacts, in which the source to drain current is controlled by the bending of the NW. A possible mechanism for the PE-FET is suggested to be associated with the carrier trapping effect and the creation of a charge depletion zone under elastic deformatioin. This PE-FET has been applied as a force/pressure sensor for measuring forces in the nanonewton range and even smaller with the use of smaller NWs. An almost linear relationship between the bending force and the conductance was found at small bending regions, demonstrating the principle of nanowire-based nanoforce and nanopressure sensors.