Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
Papers published on a yearly basis
Papers
IBM1
TL;DR: The phase-shifting mask as mentioned in this paper consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite.
Abstract: The phase-shifting mask consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite. Destructive interference between waves from adjacent apertures cancels some diffraction effects and increases the spatial resolution with which such patterns can be projected. A simple theory predicts a near doubling of resolution for illumination with partial incoherence σ < 0.3, and substantial improvements in resolution for σ < 0.7. Initial results obtained with a phase-shifting mask patterned with typical device structures by electron-beam lithography and exposed using a Mann 4800 10X tool reveals a 40-percent increase in usuable resolution with some structures printed at a resolution of 1000 lines/mm. Phase-shifting mask structures can be used to facilitate proximity printing with larger gaps between mask and wafer. Theory indicates that the increase in resolution is accompanied by a minimal decrease in depth of focus. Thus the phase-shifting mask may be the most desirable device for enhancing optical lithography resolution in the VLSI/VHSIC era.
784 citations
Patent•
18 Sep 1997TL;DR: In this article, the phase shift mask and the single phase structure mask are derived from a set of masks used in a larger minimum dimension process technology and used for shrinking integrated circuit designs.
Abstract: A method and apparatus for creating a phase shifting mask and a structure mask for shrinking integrated circuit designs. One embodiment of the invention includes using a two mask process. The first mask is a phase shift mask and the second mask is a single phase structure mask. The phase shift mask primarily defines regions requiring phase shifting. The single phase structure mask primarily defines regions not requiring phase shifting. The single phase structure mask also prevents the erasure of the phase shifting regions and prevents the creation of undesirable artifact regions that would otherwise be created by the phase shift mask. Both masks are derived from a set of masks used in a larger minimum dimension process technology.
347 citations
Patent•
6 Feb 2002
TL;DR: In this paper, techniques for extending the use of phase shift techniques to implementation of masks used for complex layouts in the layers of integrated circuits, beyond selected critical dimension features, are presented.
Abstract: Techniques are provided for extending the use of phase shift techniques to implementation of masks used for complex layouts in the layers of integrated circuits, beyond selected critical dimension features. The method includes identifying features for which phase shifting can be applied, automatically mapping the phase shifting regions for implementation of such features, resolving phase conflicts which might occur according to a given design rule, and application of assist features and proximity correction features. The method includes applying an adjustment to a phase shift mask pattern including a first and a second phase shift window, and a control chrome with a control width, and/or to a trim mask pattern having a trim shape with a trim width based upon one or both of a rule based correction and a model based correction to improve a match between a resulting exposure pattern and a target feature.
241 citations
Patent•
24 Apr 2002
TL;DR: In this paper, an exposure method that includes the steps of forming a phase shift mask having a desired pattern and a cyclic dummy pattern overlaid onto the desired pattern is provided.
Abstract: There is provided an exposure method that includes the steps of forming a phase shift mask having a desired pattern and a cyclic dummy pattern overlaid onto the desired pattern, a part of the desired pattern to be resolved by effects of the dummy pattern being thicker than the dummy pattern's line width, illuminating the phase shift mask by using illumination light having a peak near or on an optical axis in an intensity distribution to transfer the desired pattern onto the exposure plane by projecting light having passed through the phase shift mask onto the exposure plane.
222 citations
Patent•
IBM1
TL;DR: In this article, a method of generating patterns of a pair of photomasks from a data set defining a circuit layout to be provided on a substrate includes identifying critical segments of the circuit layout on the substrate.
Abstract: A method of generating patterns of a pair of photomasks from a data set defining a circuit layout to be provided on a substrate includes identifying critical segments of the circuit layout to be provided on the substrate. Block mask patterns are generated and then legalized based on the identified critical segments. Thereafter, phase mask patterns are generated, legalized and colored. The legalized block mask patterns and the legalized phase mask patterns that have been colored define features of a block mask and an alternating phase shift mask, respectively, for use in a dual exposure method for patterning features in a resist layer of a substrate.
207 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2021 | 9 |
| 2020 | 17 |
| 2019 | 13 |
| 2018 | 24 |
| 2017 | 30 |
| 2016 | 32 |