Phase-change memory

Abstract: In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

Abstract: The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. An alternative memory technology that uses resistance contrast in phase-change materials is being actively investigated in the circuits community. Phase Change Memory (PCM) devices offer more density relative to DRAM, and can help increase main memory capacity of future systems while remaining within the cost and power constraints.In this paper, we analyze a PCM-based hybrid main memory system using an architecture level model of PCM.We explore the trade-offs for a main memory system consisting of PCMstorage coupled with a small DRAM buffer. Such an architecture has the latency benefits of DRAM and the capacity benefits of PCM. Our evaluations for a baseline system of 16-cores with 8GB DRAM show that, on average, PCM can reduce page faults by 5X and provide a speedup of 3X. As PCM is projected to have limited write endurance, we also propose simple organizational and management solutions of the hybrid memory that reduces the write traffic to PCM, boosting its lifetime from 3 years to 9.7 years.

Abstract: Using nonvolatile memories in memory hierarchy has been investigated to reduce its energy consumption because nonvolatile memories consume zero leakage power in memory cells One of the difficulties is, however, that the endurance of most nonvolatile memory technologies is much shorter than the conventional SRAM and DRAM technology This has limited its usage to only the low levels of a memory hierarchy, eg, disks, that is far from the CPUIn this paper, we study the use of a new type of nonvolatile memories -- the Phase Change Memory (PCM) as the main memory for a 3D stacked chip The main challenges we face are the limited PCM endurance, longer access latencies, and higher dynamic power compared to the conventional DRAM technology We propose techniques to extend the endurance of the PCM to an average of 13 (for MLC PCM cell) to 22 (for SLC PCM) years We also study the design choices of implementing PCM to achieve the best tradeoff between energy and performance Our design reduced the total energy of an already low-power DRAM main memory of the same capacity by 65%, and energy-delay2 product by 60% These results indicate that it is feasible to use PCM technology in place of DRAM in the main memory for better energy efficiency

Abstract: Modern computer systems have been built around the assumption that persistent storage is accessed via a slow, block-based interface. However, new byte-addressable, persistent memory technologies such as phase change memory (PCM) offer fast, fine-grained access to persistent storage.In this paper, we present a file system and a hardware architecture that are designed around the properties of persistent, byteaddressable memory. Our file system, BPFS, uses a new technique called short-circuit shadow paging to provide atomic, fine-grained updates to persistent storage. As a result, BPFS provides strong reliability guarantees and offers better performance than traditional file systems, even when both are run on top of byte-addressable, persistent memory. Our hardware architecture enforces atomicity and ordering guarantees required by BPFS while still providing the performance benefits of the L1 and L2 caches.Since these memory technologies are not yet widely available, we evaluate BPFS on DRAM against NTFS on both a RAM disk and a traditional disk. Then, we use microarchitectural simulations to estimate the performance of BPFS on PCM. Despite providing strong safety and consistency guarantees, BPFS on DRAM is typically twice as fast as NTFS on a RAM disk and 4-10 times faster than NTFS on disk. We also show that BPFS on PCM should be significantly faster than a traditional disk-based file system.