Topic
Partial pressure
About: Partial pressure is a research topic. Over the lifetime, 12620 publications have been published within this topic receiving 240657 citations.
Papers published on a yearly basis
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Papers
TL;DR: In this paper, a simple technique is described for calculating the adsorption equilibria for components in a gaseous mixture, using only data for the pure-component adaption equilibrium at the same temperature and on the same adsorbent.
Abstract: A simple technique is described for calculating the adsorption equilibria for components in a gaseous mixture, using only data for the pure-component adsorption equilibria at the same temperature and on the same adsorbent. The proposed technique is based on the concept of an ideal adsorbed solution and, using classical surface thermodynamics, an expression analogous to Raoult's law is obtained. The essential idea of the calculation lies in the recognition that in an ideal solution the partial pressure of an adsorbed component is given by the product of its mole fraction in the adsorbed phase and the pressure which it would exert as a pure adsorbed component at the same temperature and spreading pressure as those of the mixture. Predicted isotherms give excellent agreement with experimental data for methane-ethane and ethylene-carbon dioxide on activated carbon and for carbon monoxide-oxygen and propane-propylene on silica gel. The simplicity of the calculation, which requires no data for the mixture, makes it especially useful for engineering applications.
3,556 citations
TL;DR: In this article, the authors measured the oxygen removal at various temperatures using TPR traces of unsupported or alumina-supported ceria and showed that the reduction of surface capping oxygen and bulk oxygen anions is associated with reduction of the shared oxygen anion at the interface.
1,827 citations
TL;DR: In this article, a combined citrate-EDTA complexing method was used for the preparation of SCFO and Ba0.2O3-delta (BSCFO) oxides, and the results of O-2-TPD and XRD showed that the introduction of barium into SCFO could effectively suppress the oxidation of Co3+ and Fe3+ to higher valence states of Co4 and Fe4+ in the lattice and stabilize the perovskite structure under lower oxygen partial pressures.
1,069 citations
TL;DR: Graphene chemical vapor deposition growth on copper foil using methane as a carbon source is strongly affected by hydrogen, which appears to serve a dual role: an activator of the surface bound carbon that is necessary for monolayer growth and an etching reagent that controls the size and morphology of the graphene domains.
Abstract: We show that graphene chemical vapor deposition growth on copper foil using methane as a carbon source is strongly affected by hydrogen, which appears to serve a dual role: an activator of the surface bound carbon that is necessary for monolayer growth and an etching reagent that controls the size and morphology of the graphene domains. The resulting growth rate for a fixed methane partial pressure has a maximum at hydrogen partial pressures 200–400 times that of methane. The morphology and size of the graphene domains, as well as the number of layers, change with hydrogen pressure from irregularly shaped incomplete bilayers to well-defined perfect single layer hexagons. Raman spectra suggest the zigzag termination in the hexagons as more stable than the armchair edges.
945 citations
TL;DR: In this article, the vapor-liquid-solid (VLS) reaction using silane as the Si source gas and Au as the mediating solvent was used to grow Si wires.
Abstract: Silicon nanowires (whiskers) have been grown on Si(111) via the vapor–liquid–solid (VLS) reaction using silane as the Si source gas and Au as the mediating solvent. The silane partial pressure and temperature ranges were 0.01–1 Torr and 320–600 °C, respectively. Growth at high partial pressure and low temperature leads to the growth of Si nanowires as thin as 10 nm. These wires are single crystals but exhibit growth defects such as bending and kinking. Lowering the silane partial pressure leads to an increase in the wire width and a reduction in the tendency to form growth defects. At low pressure, 40–100 nm wide well-formed wires have been grown at 520 °C. The VLS reaction using silane allows the growth of Si wires, which are significantly thinner than those grown previously using SiCl4.
708 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2025 | 46 |
| 2024 | 87 |
| 2023 | 171 |
| 2022 | 272 |
| 2021 | 194 |
| 2020 | 225 |