About: Operating temperature is a research topic. Over the lifetime, 8641 publications have been published within this topic receiving 119510 citations.
TL;DR: In this paper, an ordered double perovskite (Sr2FeMoO) was shown to exhibit intrinsic tunnelling-type magnetoresistance at room temperature.
Abstract: Colossal magnetoresistance—a huge decrease in resistance in response to a magnetic field—has recently been observed in manganese oxides with perovskite structure. This effect is attracting considerable interest from both fundamental and practical points of view1. In the context of using this effect in practical devices, a noteworthy feature of these materials is the high degree of spin polarization of the charge carriers, caused by the half-metallic nature of these materials20,21; this in principle allows spin-dependent carrier scattering processes, and hence the resistance, to be strongly influenced by low magnetic fields. This type of field control has been demonstrated for charge-carrier scattering at tunnelling junctions2,3 and at crystal-twin or ceramic grain boundaries4,5, although the operating temperature of such structures is still too low (⩽150 K) for most applications. Here we report a material—Sr2FeMoO6, an ordered double perovskite6—exhibiting intrinsic tunnelling-type magnetoresistance at room temperature. We explain the origin of this behaviour with electronic-structure calculations that indicate the material to be half-metallic. Our results show promise for the development of ordered perovskite magnetoresistive devices that are operable at room temperature.
TL;DR: In this article, a brief discussion is presented regarding the operating temperature of one-sun commercial grade silicon-based solar cells/modules and its effect upon the electrical performance of photovoltaic installations.
TL;DR: HotSpot is described, an accurate yet fast model based on an equivalent circuit of thermal resistances and capacitances that correspond to microarchitecture blocks and essential aspects of the thermal package that shows that power metrics are poor predictors of temperature, and that sensor imprecision has a substantial impact on the performance of DTM.
Abstract: With power density and hence cooling costs rising exponentially, processor packaging can no longer be designed for the worst case, and there is an urgent need for runtime processor-level techniques that can regulate operating temperature when the package's capacity is exceeded. Evaluating such techniques, however, requires a thermal model that is practical for architectural studies.This paper describes HotSpot, an accurate yet fast model based on an equivalent circuit of thermal resistances and capacitances that correspond to microarchitecture blocks and essential aspects of the thermal package. Validation was performed using finite-element simulation. The paper also introduces several effective methods for dynamic thermal management (DTM): "temperature-tracking" frequency scaling, localized toggling, and migrating computation to spare hardware units. Modeling temperature at the microarchitecture level also shows that power metrics are poor predictors of temperature, and that sensor imprecision has a substantial impact on the performance of DTM.
TL;DR: In this paper, a brief discussion is presented regarding the operating temperature of one-sun commercial grade silicon-based solar cells/modules and its effect upon the electrical performance of photovoltaic installations.
TL;DR: In this paper, the room-temperature gas sensing properties of ZnO-based gas sensors are comprehensively reviewed, and more attention is particularly paid to the effective strategies that create room temperature gas sensing, mainly including surface modification, additive doping and light activation.
Abstract: Novel gas sensors with high sensing properties, simultaneously operating at room temperature are considerably more attractive owing to their low power consumption, high security and long-term stability. Till date, zinc oxide (ZnO) as semiconducting metal oxide is considered as the promising resistive-type gas sensing material, but elevated operating temperature becomes the bottleneck of its extensive applications in the field of real-time gas monitoring, especially in flammable and explosive gas atmosphere. In this respect, worldwide efforts have been devoted to reducing the operating temperature by means of multiple methods In this communication, room-temperature gas sensing properties of ZnO based gas sensors are comprehensively reviewed. Much more attention is particularly paid to the effective strategies that create room-temperature gas sensing of ZnO based gas sensors, mainly including surface modification, additive doping and light activation. Finally, some perspectives for future investigation on room-temperature gas-sensing materials are discussed as well.