Night vision

Abstract: Thermal cameras are passive sensors that capture the infrared radiation emitted by all objects with a temperature above absolute zero. This type of camera was originally developed as a surveillance and night vision tool for the military, but recently the price has dropped, significantly opening up a broader field of applications. Deploying this type of sensor in vision systems eliminates the illumination problems of normal greyscale and RGB cameras. This survey provides an overview of the current applications of thermal cameras. Applications include animals, agriculture, buildings, gas detection, industrial, and military applications, as well as detection, tracking, and recognition of humans. Moreover, this survey describes the nature of thermal radiation and the technology of thermal cameras.

Abstract: BackgroundMutations in RPE65 cause Leber’s congenital amaurosis, a progressive retinal degenerative disease that severely impairs sight in children. Gene therapy can result in modest improvements in night vision, but knowledge of its efficacy in humans is limited. MethodsWe performed a phase 1–2 open-label trial involving 12 participants to evaluate the safety and efficacy of gene therapy with a recombinant adeno-associated virus 2/2 (rAAV2/2) vector carrying the RPE65 complementary DNA, and measured visual function over the course of 3 years. Four participants were administered a lower dose of the vector, and 8 were administered a higher dose. In a parallel study in dogs, we investigated the relationship among vector dose, visual function, and electroretinography (ERG) findings. ResultsImprovements in retinal sensitivity were evident, to varying extents, in six participants for up to 3 years, peaking at 6 to 12 months after treatment and then declining. No associated improvement in retinal function was d...

Abstract: Although compound semiconductors like gallium arsenide have a substantial performance advantage over silicon in photovoltaic and optoelectronic applications, these do not outweigh the costly process of growing large, high-quality layers of these materials and transferring them to flexible or transparent substrates for use in devices such as solar cells, night vision cameras and wireless communication systems. But now John Rogers and his team demonstrate a new fabrication approach that may remove this disadvantage. They grow films of GaAs and AlGaAs in thick, multilayered assemblies in a single deposition sequence, then release the individual layers and distribute them over foreign substrates by printing. The technological potential of this strategy to large-area applications is illustrated with the fabrication of GaAs devices such as field-effect transistors on glass and photovoltaic modules on sheets of plastic. Although compound semiconductors like gallium arsenide (GaAs) offer advantages over silicon for photovoltaic and optoelectronic applications, these do not outweigh the costly process of growing large layers of these materials and transferring them to appropriate substrates. However, a new fabrication approach is now demonstrated: films of GaAs and AlGaAs are grown in thick, multilayered assemblies in a single sequence; the individual layers are then released and distributed over foreign substrates by printing. Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices1,2 to radio-frequency electronics3,4 and most forms of optoelectronics5,6. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

Abstract: ABSTRA C T We present the first World Atlas of the zenith artificial night sky brightness at sea level. Based on radiance-calibrated high-resolution DMSP satellite data and on accurate modelling of light propagation in the atmosphere, it provides a nearly global picture of how mankind is proceeding to envelop itself in a luminous fog. Comparing the Atlas with the United States Department of Energy (DOE) population density data base, we determined the fraction of population who are living under a sky of given brightness. About two-thirds of the World population and 99 per cent of the population in the United States (excluding Alaska and Hawaii) and European Union live in areas where the night sky is above the threshold set for polluted status. Assuming average eye functionality, about one-fifth of the World population, more than two-thirds of the United States population and more than one half of the European Union population have already lost naked eye visibility of the Milky Way. Finally, about onetenth of the World population, more than 40 per cent of the United States population and one sixth of the European Union population no longer view the heavens with the eye adapted to night vision, because of the sky brightness.