Topic
Negative luminescence
About: Negative luminescence is a research topic. Over the lifetime, 86 publications have been published within this topic receiving 1143 citations.
Papers published on a yearly basis
Papers
TL;DR: In this paper, it was shown that three layer ppn structures, where the underlined symbols mean wider gap, have close to Auger limited RoAs at temperatures above 145K, and the diode emitters exhibit forward biased electroluminescence at room temperature, although the efficiency of this emission is found to fall rapidly as the peak wavelength is increased toward 9 μm.
Abstract: The ability to grow complex multilayer structures in Hg1-xCdxTe by epitaxial techniques has made it possible to produce a range of new devices such as infrared LEDs, lasers, and two-color infrared detector arrays. The devices described here, however, are designed to operate at temperatures above 145K and include both infrared sources and detectors. Three layer ppn structures, where the underlined symbols mean wider gap, have close to Auger limited RoAs at temperatures above 145K. Under reverse bias, the devices exhibit Auger suppression leading to useful detectivities at room temperature. The diodes exhibit forward biased electroluminescence at room temperature although the efficiency of this emission is found to fall rapidly as the peak wavelength is increased toward 9 μm due to increased Auger recombination rates. By reverse biasing them, however, the devices show negative luminescence as a result of reducing the electron and hole densities below their thermal equilibrium value. The diode emitters have a higher quantum efficiency when used in this mode due to Auger suppression of the dark current.
56 citations
TL;DR: In this article, a near intrinsic active region bounded by more highly doped contact regions was found to exhibit positive or negative luminescence at medium to long infrared wavelengths when forward or reverse biased respectively at room temperature.
53 citations
TL;DR: Negative luminescence operation is reported for p-n diode devices with type-II InAs/InAsSb strained-layer superlattice active regions which have a spectral peak at 4.2 μm as discussed by the authors.
Abstract: Negative luminescence operation is reported for p–n diode devices with type-II InAs/InAsSb strained-layer-superlattice active regions which have a spectral peak at 4.2 μm and a negative luminescence efficiency of up to 20%.
41 citations
TL;DR: In this paper, the reverse bias caused remarkable current spreading and uniform negative emittance distribution, and the negative luminescence mode is more favorable for IR LEDs operating at higher temperatures.
Abstract: High-resolution two-dimensional infrared (IR) imaging of dynamic electronic processes in the surface-emitting p-InAsSb/n-InAsSbP light-emitting diodes (LEDs) (λ=4.3 μm, T>300 K) showed that forward current crowding drastically decreases efficiency of LEDs with point contacts. Current flows and IR emittance “forget” the emitting area size and geometry, whereas extended areas far off the point contacts become even “darker” with the current increase. Contrary to this, the reverse bias causes remarkable current spreading and uniform “negative emittance” distribution. Therefore the negative luminescence mode is more favorable for IR LEDs operating at higher temperatures.
41 citations
TL;DR: In this article, negative luminescence is displayed by type-II InAs/GaSb superlattice diodes under reverse bias, and negative emittance at room temperature is as high as 1.5μW/cm2/meV at 4.9 μm.
Abstract: Strong negative luminescence is displayed by type-II InAs/GaSb superlattice diodes under reverse bias. The negative emittance at room temperature is as high as 1.5 μW/cm2 meV at 4.9 μm, and the negative efficiency at 3.5 μm is 41% of the emission from a perfect blackbody at that temperature. The main features of the data are reproduced by a detailed photodiode simulation.
39 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2015 | 2 |
| 2013 | 1 |
| 2012 | 3 |
| 2011 | 1 |
| 2010 | 6 |
| 2009 | 1 |