Topic
Micropipe
About: Micropipe is a research topic. Over the lifetime, 749 publications have been published within this topic receiving 13132 citations. The topic is also known as: micropore & microtube.
Papers published on a yearly basis
1 / 2
Papers
TL;DR: In this article, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed, focusing on demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers.
Abstract: Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm−1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm−2 order of magnitude in 1992 to 3.5 cm−2 at the research level in 1995.
1,419 citations
TL;DR: In this article, the possibility of producing silicon carbide single-crystalline ingots from seeds in the 1800 to 2600°C range has been established, which is very promising at low temperatures.
597 citations
TL;DR: In this paper, it was shown that micropipe defects originating in 4H- and 6H-SiC substrates can cause pre-avalanche reverse bias point failures in most epitaxially-grown pn junction devices of 1 mm/sup 2/ or larger in area.
Abstract: Reports on the characteristics of a major defect in mass-produced silicon carbide wafers which severely limits the performance of silicon carbide power devices. Micropipe defects originating in 4H- and 6H-SiC substrates were found to cause pre-avalanche reverse-bias point failures in most epitaxially-grown pn junction devices of 1 mm/sup 2/ or larger in area. Until such defects are significantly reduced from their present density (on the order of 100's of micropipes/cm/sup 2/), silicon carbide power device ratings will be restricted to around several amps or less. >
318 citations
TL;DR: Methods for growing large, defect-free silicon carbide crystals have enabled the fabrication of devices that can operate at high power and SiC is now poised as the linchpin to “green energy” that will replace less energy-efficient switches now based on silicon technology.
Abstract: For high-voltage, high-current devices that can be operated at elevated temperatures, silicon carbide (SiC) has been the material of choice Efforts to produce single-crystal SiC began 30 years ago, but intrinsic problems in growing high-quality single-crystal boules free of micropipe defects—micrometer-scale pinholes created by dislocations—have only recently been overcome A series of developments in crystal growth have made large-area, high-quality SiC substrates readily available for applications such as high-frequency transmitters and solid-state white lighting Additional reductions in defects in the active region of devices have been achieved through epitaxial approaches, in which single-crystal layers are grown on the substrate SiC is now poised as the linchpin to “green energy” that will replace less energy-efficient switches now based on silicon technology
314 citations
Proceedings Article•
1 Jan 1983TL;DR: In this paper, the authors describe applications that would benefit from the availability of high temperature semiconductor devices and compare the potential materials for these devices and the problems of each are discussed.
Abstract: Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.
272 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2021 | 5 |
| 2020 | 5 |
| 2019 | 11 |
| 2018 | 6 |
| 2017 | 15 |
| 2016 | 12 |