TL;DR: Electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy is reported, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities.
Abstract: The advent of spin transfer torque effect accommodates site-specific switching of magnetic nanostructures by current alone without magnetic field. However, the critical current density required for usual spin torque switching remains stubbornly high around 10(6)-10(7) A cm(-2). It would be fundamentally transformative if an electric field through a voltage could assist or accomplish the switching of ferromagnets. Here we report electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities. These results represent a crucial step towards ultralow energy switching in magnetic tunnel junctions, and open a new avenue for exploring other voltage-controlled spintronic devices.
TL;DR: Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions was performed in this paper, where the spin transfer torque was measured in terms of voltage.
Abstract: Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions
TL;DR: In this article, the magnetic field induced microwave absorption in sintered high-Tc copper oxide superconductors is found to be proportional to the surface area of samples and not to their volume, establishing that absorption takes place near the sample surface.
Abstract: Magnetic-field-induced microwave absorption in sintered high-Tc copper oxide superconductors is found to be proportional to the surface area of samples and not to their volume, establishing that absorption takes place near the sample surface. The surface resistance and reactance increase with magnetic field as a result of energy loss through fluxons driven by superconducting currents. When the magnetic field is modulated, absorptive and dispersive signals arise from modulation of the complex surface impedance through processes induced by the changing magnetic fields.
TL;DR: In this paper, a high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current was proposed.
Abstract: A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
TL;DR: In this paper, the switching properties of Stoner-like magnetic particles, subject to short magnetic field pulses, obtained by numerical investigations, are discussed as a function of the external field pulse strength and direction, pulse length, and the pulse shape.
Abstract: Results of the switching properties of Stoner-like magnetic particles, subject to short magnetic field pulses, obtained by numerical investigations, are reported. The switching properties are discussed as a function of the external field pulse strength and direction, pulse length, and the pulse shape. For field pulses long compared to the precession time, the switching behavior is governed by the magnetic damping term. In the limit of short field pulses, switching properties are dominated by the details of the magnetic precession. In the latter case, the magnetic damping term is of minor importance and ultrafast switching can be achieved by choosing the right field pulse parameters. It is also possible to choose pulse parameters in order to provide switching over a wide range of applied field directions.