About: Luminous efficacy is a research topic. Over the lifetime, 5630 publications have been published within this topic receiving 76554 citations. The topic is also known as: luminous efficacy.
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Abstract: Compact solid-state lamps based on light-emitting diodes (LEDs) are of current technological interest as an alternative to conventional light bulbs The brightest LEDs available so far emit red light and exhibit higher luminous efficiency than fluorescent lamps If this luminous efficiency could be transferred to white LEDs, power consumption would be dramatically reduced, with great economic and ecological consequences But the luminous efficiency of existing white LEDs is still very low, owing to the presence of electrostatic fields within the active layers These fields are generated by the spontaneous and piezoelectric polarization along the [0001] axis of hexagonal group-III nitrides--the commonly used materials for light generation Unfortunately, as this crystallographic orientation corresponds to the natural growth direction of these materials deposited on currently available substrates Here we demonstrate that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency We expect that this approach will pave the way towards highly efficient white LEDs
TL;DR: In this paper, a high-work-function, low-sheet-resistance graphene anode was used to improve the luminous efficiency of organic light-emitting diodes (OLEDs).
Abstract: Although graphene films have a strong potential to replace indium tin oxide anodes in organic light-emitting diodes (OLEDs), to date, the luminous efficiency of OLEDs with graphene anodes has been limited by a lack of efficient methods to improve the low work function and reduce the sheet resistance of graphene films to the levels required for electrodes1,2,3,4. Here, we fabricate flexible OLEDs by modifying the graphene anode to have a high work function and low sheet resistance, and thus achieve extremely high luminous efficiencies (37.2 lm W–1 in fluorescent OLEDs, 102.7 lm W–1 in phosphorescent OLEDs), which are significantly higher than those of optimized devices with an indium tin oxide anode (24.1 lm W–1 in fluorescent OLEDs, 85.6 lm W–1 in phosphorescent OLEDs). We also fabricate flexible white OLED lighting devices using the graphene anode. These results demonstrate the great potential of graphene anodes for use in a wide variety of high-performance flexible organic optoelectronics. By replacing conventional indium tin oxide (ITO) anodes with high-work-function, low-sheet-resistance graphene anodes, researchers demonstrate flexible fluorescent organic LEDs with extremely high luminous efficiencies of 37.2 lm W–1 for fluorescent devices and 102.7 lm W–1 for phosphorescent devices. These values are significantly higher than those of optimized organic LEDs based on ITO anodes.
TL;DR: A prototype phosphor-converted LED (pc-LED), employing Sr[LiAl3N4]:Eu(2+) as the red-emitting component, already shows an increase of 14% in luminous efficacy compared with a commercially available high colour rendering index (CRI) LED, together with an excellent colour rendition.
Abstract: To facilitate the next generation of high-power white-light-emitting diodes (white LEDs), the discovery of more efficient red-emitting phosphor materials is essential. In this regard, the hardly explored compound class of nitridoaluminates affords a new material with superior luminescence properties. Doped with Eu(2+), Sr[LiAl3N4] emerged as a new high-performance narrow-band red-emitting phosphor material, which can efficiently be excited by GaN-based blue LEDs. Owing to the highly efficient red emission at λ(max) ~ 650 nm with a full-width at half-maximum of ~1,180 cm(-1) (~50 nm) that shows only very low thermal quenching (>95% relative to the quantum efficiency at 200 °C), a prototype phosphor-converted LED (pc-LED), employing Sr[LiAl3N4]:Eu(2+) as the red-emitting component, already shows an increase of 14% in luminous efficacy compared with a commercially available high colour rendering index (CRI) LED, together with an excellent colour rendition (R(a)8 = 91, R9 = 57). Therefore, we predict great potential for industrial applications in high-power white pc-LEDs.
TL;DR: This review article highlights the current methods to realize the white light emission in a single-phase host, including doping a single rare earth ion into appropriate single- phase hosts and codoping different ions in one host to control emission color via energy transfer processes.
Abstract: White light-emitting diodes (WLEDs) as new solid-state light sources have a greatly promising application in the field of lighting and display. So far much effort has been devoted to exploring novel luminescent materials for WLEDs. Currently the major challenges in WLEDs are to achieve high luminous efficacy, high chromatic stability, brilliant color-rending properties, and price competitiveness against fluorescent lamps, which rely critically on the phosphor properties. In recent years, numerous efforts have been made to develop single-phase white-light-emitting phosphors for near-ultraviolet or ultraviolet excitation to solve the above challenges with certain achievements. This review article highlights the current methods to realize the white light emission in a single-phase host, including: (1) doping a single rare earth ion (Eu3+, Eu2+ or Dy3+) into appropriate single-phase hosts; (2) co-doping various luminescent ions with different emissions into a single matrix simultaneously, such as Tm3+/Tb3+/Eu3+, Tm3+/Dy3+, Yb3+/Er3+/Tm3+etc.; (3) codoping different ions in one host to control emission color via energy transfer processes; and (4) controlling the concentration of the defect and reaction conditions of defect-related luminescent materials.
TL;DR: In this article, the authors focus on recent developments in the preparation, crystal structure, luminescence and applications of silicon-based oxynitride and nitride phosphors for white light-emitting diodes (LEDs).