Line pair

Abstract: The 12 best NIR water transition line pairs for temperature measurements with a single DFB laser in flames are determined by systematic analysis of the HITRAN simulation of the water spectra in the 1–2 μm spectral region. A specific line pair near 1.4 μm was targeted for non-intrusive measurements of gas temperature in combustion systems using a scanned-wavelength technique with wavelength modulation and 2f detection. This sensor uses a single diode laser (distributed-feedback), operating near 1.4 μm and is wavelength scanned over a pair of H2O absorption transitions (7154.354 cm-1 & 7153.748 cm-1) at a 2 kHz repetition rate. The wavelength is modulated (f=500 kHz) with modulation amplitude a=0.056 cm-1. Gas temperature is inferred from the ratio of the second harmonic signals of the two selected H2O transitions. The fiber-coupled-single-laser design makes the system compact, rugged, low cost and simple to assemble. As part of the sensor development effort, design rules were applied to optimize the line selection, and fundamental spectroscopic parameters of the selected transitions were determined via laboratory measurements including the temperature-dependent line strength, self-broadening coefficients, and air-broadening coefficients. The new sensor design includes considerations of hardware and software to enable fast data acquisition and analysis; a temperature readout rate of 2 kHz was demonstrated for measurements in a laboratory flame at atmospheric pressure. The combination of scanned-wavelength and wavelength-modulation minimizes interference from emission and beam steering, resulting in a robust temperature sensor that is promising for combustion control applications.

Abstract: An electrical connector 1 of controlled impedance includes a housing 2 on which are mounted consecutive signal transmission line pairs 12 in consecutive reverse order, each signal transmission line pair 12 being provided by a pair 7 of signal contacts 8 in one contact row 6 opposing a ground contact 9 in another contact row 6, and by having the consecutive signal transmission line pairs 12 in reverse order, the signal contacts 8 of each signal transmission line pair 12 are arranged consecutively with an adjacent ground contact 9 of another signal transmission line pair 12 of reversed order, which minimizes cross talk between different pairs 7 of signal contacts 8, and which provides maximized areas surrounding the signal contacts 8 and the ground contacts 9 for routing circuit paths

Abstract: A memory device has a global input/output line pair configured for data transfer The memory device includes a sense amplifier, a detecting unit and a detect control signal generating unit The sense amplifier is coupled to the global input/output line pair The detecting unit detects a potential difference between the global input/output line pair The detect control signal generating unit disables an operation of the sense amplifier and precharges the global input/output line pair to a predetermined voltage A precharge operation of a memory device may be performed at a higher speed so that a high speed operation of the memory device may be achieved In addition, the operating time of the sense amplifier may be decreased so that the power consumption of the memory device may be reduced

Abstract: A local sense amplifier circuit in a semiconductor memory device, the local sense amplifier circuit including a local data sensing unit configured to amplify a voltage difference between a local input/output (I/O) line pair based on a local sensing enable signal to provide the amplified voltage difference to a global I/O line pair, the local I/O line pair including a first local I/O line and a second local I/O line, and a local I/O line control unit including a first capacitor and a second capacitor, the first capacitor increasing a voltage level of the first local I/O line based on the local sensing enable signal, the second capacitor increasing a voltage level of the second local I/O line based on the local sensing enable signal.