Topic
ISFET
About: ISFET is a research topic. Over the lifetime, 1926 publications have been published within this topic receiving 37353 citations. The topic is also known as: ion-sensitive field-effect transistor.
Papers published on a yearly basis
Papers
TL;DR: The development of an ion-sensitive solid-state device that combines the principles of an MOS transistor and a glass electrode and can be used for measurements of ion activities in electrochemical and biological environments is described.
Abstract: The development of an ion-sensitive solid-state device is described. The device combines the principles of an MOS transistor and a glass electrode and can be used for measurements of ion activities in electrochemical and biological environments. Some preliminary results are given.
2,095 citations
Patent•
28 Mar 2006TL;DR: In this article, a gate insulator is coupled to the source electrode, drain electrode, and gate electrode in a thin-film transistor (TFT) to operate at low operating voltage.
Abstract: A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
1,037 citations
TL;DR: In this article, a new general theory to describe the electrostatic potential at the metal oxide electrolyte solution interface is presented, which describes the variations of the electric potential as a function of the differential double layer capacitance and the intrinsic buffer capacity.
474 citations
TL;DR: The main issues, approaches, and challenges are discussed, with the aim of stimulating a broader interest in developing ISFET-based biosensors and extending their applications for reliable and sensitive analysis of various biomolecules.
Abstract: In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the most intriguing approaches in electrical biosensing technology. Here, we review some of the main advances in this field over the past few years, explore its application prospects, and discuss the main issues, approaches, and challenges, with the aim of stimulating a broader interest in developing ISFET-based biosensors and extending their applications for reliable and sensitive analysis of various biomolecules such as DNA, proteins, enzymes, and cells.
450 citations
TL;DR: In this article, the fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 m from Atmel-ES2) is reported.
Abstract: The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 m from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown good operating characteristics, with a 47 mV/pH response. The use of a commercial CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors.
408 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2025 | 13 |
| 2024 | 27 |
| 2023 | 56 |
| 2022 | 61 |
| 2021 | 60 |
| 2020 | 67 |