Topic
Interface segregation principle
About: Interface segregation principle is a research topic. Over the lifetime, 111 publications have been published within this topic receiving 2554 citations. The topic is also known as: ISP.
Papers published on a yearly basis
Papers
TL;DR: In this article, a phase field model was proposed to predict the kinetics of phase transformation at segregation decorated grain boundaries, showing that strong interface segregation of austenite stabilizing elements (here Mn) and the release of elastic stresses from the host martensite can generally promote phase transformation.
315 citations
TL;DR: The local composition of small coherent Cu-rich precipitates with a metastable body-centered cubic structure in a ferritic α-Fe matrix of a high-strength low-carbon steel was studied by conventional atom-probe tomography as mentioned in this paper.
310 citations
TL;DR: In this paper, atom-probe tomography, transmission electron microscopy, X-ray diffraction and first-principles calculations are employed to study compositional evolution of GPII zones and θ′ precipitates, and solute segregation at α-Al/θ′ interfaces in Al-1.7 at.% Cu alloys.
256 citations
TL;DR: In this article, the distribution of Rhenium atoms in Ni-based single-crystal superalloy is studied by sub-angstrom resolution transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS).
165 citations
TL;DR: In this article, the interface segregation coefficient is treated as an adjustable parameter and no attempt is made to justify the values obtained; however, it is argued that the excellent fit between theory and experiment is a strong indication of the basic validity of the melting model of pulsed-laser annealing.
Abstract: The radiation from $Q$ -switched ruby and Nd:YAG (yttrium aluminum garnet) lasers can anneal the lattice damage produced by ion implantation of semiconductors. In the first paper of this series, we described the models and methods we have been using for heat-transport calculations during pulsed-laser annealing and gave numerous illustrations of the type of results which are obtained. In this paper, we discuss dopant-diffusion calculations in detail, with particular emphasis on the incorporation of segregation effects into the modeling. From the forms of the experimental dopant profiles, it is established that pulsed-laser annealing is a nonequilibrium process, but in this paper the interface segregation coefficient is treated as an adjustable parameter and no attempt is made to justify the values obtained. Approximate analytical and finite-difference solutions to the diffusion equation are discussed and compared. It is argued here that the excellent fit between theory and experiment which is obtained is a strong indication of the basic validity of the melting model of pulsed-laser annealing.
128 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2021 | 10 |
| 2020 | 6 |
| 2019 | 6 |
| 2018 | 5 |
| 2017 | 7 |
| 2016 | 3 |