Interconnect bottleneck

Abstract: In the past five decades, the semiconductor industry has gone through two distinct eras of scaling: the geometric (or classical) scaling era and the equivalent (or effective) scaling era. As transistor and memory features approach 10 nanometres, it is apparent that room for further scaling in the horizontal direction is running out. In addition, the rise of data abundant computing is exacerbating the interconnect bottleneck that exists in conventional computing architecture between the compute cores and the memory blocks. Here we argue that electronics is poised to enter a new, third era of scaling — hyper-scaling — in which resources are added when needed to meet the demands of data abundant workloads. This era will be driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration and heterogeneous integration techniques. This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration, and heterogeneous integration techniques.

Abstract: Recent studies showed that conventional approaches being used to solve problems imposed by hard-wired metal interconnects will eventually encounter fundamental limits and may impede the advance of future ultralarge-scale integrated circuits (ULSls). To surpass these fundamental limits, we introduce a novel RF/wireless interconnect concept for future inter- and intra-ULSI communications. Unlike the traditional "passive" metal interconnect, the "active" RF/wireless interconnect is based on low loss and dispersion-free microwave signal transmission, near-field capacitive coupling, and modem multiple-access algorithms. In this paper we address issues relevant to the signal channeling of the RF/wireless interconnect and discuss its advantages in speed, signal integrity, and channel reconfiguration. The electronic overhead required in the RF/wireless-interconnect system and its compatibility with the future ULSI and MCM (multi-chip-module) will be discussed as well.

Abstract: With finer line widths and faster switching speeds, the resistance of on-chip metal interconnect is having a dominant impact on the timing behavior of logic gates. Specifically, the gates are switching faster and the interconnect delays are getting longer due to scaling. This results in a trend in which the RC interconnect delay is beginning to comprise a larger portion of the overall logic stage delay. This shift in relative delay dominance from the gate to the RC interconnect is increased by resistance shielding. That is, as the gate "resistance" gets smaller and the metal resistance gets larger, the gate no longer "sees" the total net capacitance and the gate delay may be significantly less than expected. This trend complicates the timing analysis of digital circuits, which relies upon simple, empirical gate delay equations for efficiency. In this paper, we develop an analytical expression for the "effective load capacitance" of a pc interconnect. In addition, when there is significant shielding, the response waveforms at the gate output may have a large exponential tail. We show that this waveform tail can strongly influence the delay of the RC interconnect. Therefore, we propose an extension of the effective capacitance equation that captures the complete waveform response accurately, with a two-piece gate-output-waveform approximation. >

Abstract: With vastly increased complexity and functionality in the "nanometer era" (i.e. hundreds of millions of transistors on one chip), increasing the performance of integrated circuits has become a challenging task. This is due primarily to the inevitable increase in the distance among circuit elements and interconnect design solutions have become the greatest determining factor in overall performance. Three-dimensional (3D) integrated circuits (ICs), which contain multiple layers of active devices, have the potential to enhance dramatically chip performance and functionality, while reducing the distance among devices on a chip. They promise solutions to the current "interconnect bottleneck" challenges faced by IC designers. They also may facilitate the integration of heterogeneous materials, devices, and signals. However, before these advantages can be realized, key technology challenges of 3D ICs must be addressed. This is the first book on 3-D integrated circuit design, covering all of the technological and design aspects of this emerging design paradigm, while proposing effective solutions to specific challenging problems concerning the design of three-dimensional integrated circuits. A handy, comprehensive reference or a practical design guide, this book provides a sound foundation for the design of three-dimensional integrated circuits. * Demonstrates how to overcome "Interconnect Bottleneck" with 3D Integrated Circuit Design...leading edge design techniques offer solutions to problems (performance/power consumption/price) faced by all circuit designers. * The FIRST book on 3D Integrated Circuit Design...provides up-to-date information that is otherwise difficult to find; * Focuses on design issues key to the product development cyle...good design plays a major role in exploiting the implementation flexibilities offered in the third dimension; * Provides broad coverage of 3D IC Design, including Interconnect Prediction Models, Thermal Management Techniques, and Timing Optimization...offers practical view of designing 3D circuits.