About: Germane is a research topic. Over the lifetime, 786 publications have been published within this topic receiving 12066 citations. The topic is also known as: Germanium tetrahydride & Germanomethane.
TL;DR: In this article, a series of Si:Ge alloys and structures has been prepared by ultra-high-vacuum chemical vapor deposition, and a cooperative growth phenomenon is observed where the addition of 10% germane to the gaseous deposition source accelerates silane's heterogeneous reaction rate by a factor of 25.
Abstract: A series of Si:Ge alloys and structures has been prepared by ultrahigh‐vacuum chemical vapor deposition. Alloys of composition 0≤Ge/Si≤0.20 are readily deposited at T=550 °C. Commensurate, defect‐free strained layers are deposited up to a critical thickness, whereupon the accumulated stress in the films is accommodated by the formation of dislocation networks in the substrate wafers. A cooperative growth phenomenon is observed where the addition of 10% germane to the gaseous deposition source accelerates silane’s heterogeneous reaction rate by a factor of 25. A model is proposed where Ge acts as a desorption center for mobile hydrogen adatoms on the Si[100] surface, accelerating heterogeneous silane pyrolysis by the enhanced availability of chemisorption sites.
TL;DR: High-pressure structures of germane (GeH4) are explored through ab initio evolutionary methodology to reveal a metallic monoclinic structure of C2/c (4 molecules/cell), which consists of layerlike motifs containing novel "H2" units.
Abstract: High-pressure structures of germane (GeH4) are explored through ab initio evolutionary methodology to reveal a metallic monoclinic structure of C2/c (4 molecules/cell). The C2/c structure consists of layerlike motifs containing novel "H2" units. Enthalpy calculations suggest a remarkably wide decomposition (Ge+H2) pressure range of 0-196 GPa, above which C2/c structure is stable. Perturbative linear-response calculations for C2/c GeH4 at 220 GPa predict a large electron-phonon coupling parameter lambda of 1.12 and the resulting superconducting critical temperature reaches 64 K.
TL;DR: In this article, rate constants and mechanisms for the gas phase reactions of atomic oxygen O(3P) with organic compounds having only saturated C-C bonds are compiled and critically evaluated, and error limits are assigned to all recommended values.
Abstract: Rate constants and mechanisms for the gas phase reactions of atomic oxygen O(3P) with organic compounds having only saturated C–C bonds are compiled and critically evaluated. Data are given for the alkanes, cycloalkanes, haloalkanes, oxygen and nitrogen containing organic compounds, and free radicals. In addition, data are given for some miscellaneous compounds containing boron, silicon, germane, and mercury. From a critical examination of the data, recommended values for rate constants are given over specified temperature intervals or at specified temperatures. Error limits are assigned to all recommended values.
TL;DR: In this article, an electron spectrometer which employs double focusing electrostatic plates was described, and the photoelectron spectra obtained by bombarding methane, silane, germane, methyl fluoride, difluoromethane, and triflooromethanes with 21.22eV photons were presented.
Abstract: An electron spectrometer which employs double focusing electrostatic plates is described. The photoelectron spectra obtained by bombarding methane, silane, germane, methyl fluoride, difluoromethane, and trifluoromethane with 21.22‐eV photons are presented. The experimental ionization energies are compared with theoretical and other experimental data, and molecular‐orbital assignments are made for the energy values obtained. Broad double maximum bands were observed in the case of methane, silane, and germane and are discussed in terms of Jahn–Teller distortion for the positive ions. Possible correlation of the methane spectrum with interstellar space data is also discussed.
TL;DR: In this paper, the photoelectron spectra of the group iv hydrides, CH 4, SiH 4, GeH 4 and SnH 4 are shown to be due to ionization from valence ax and t 2 orbitals analogous to the s and p orbitals of the corresponding inert gases.
Abstract: The photoelectron spectra of the group iv hydrides, CH 4 , SiH 4 , GeH 4 and SnH 4 are shown to be due to ionization from valence ax and t 2 orbitals analogous to the s and p orbitals of the corresponding inert gases. The associated vibrational pattern of the ax bands is a simple progression of the breathing vibration. That of the t 2 systems shows the effect of Jahn-Teller splitting part of which converts to spin-orbit splitting for the heavier hydrides. The bond lengths and angles of the ionized states are evaluated approximately from the structures and. intensities of the band patterns. The experimental results give some support for theoretical calculations by Dixon which indicate that the triple degeneracy of the (t 2 ) -1 state is removed by distortion to a D 2d conformation, its low energy 2 B 2 component involving a fairly long progression in the v 2 vibration and, in the case of methane, progressions in v 1 containing several members. This agrees with our observations but our analysis of the spectra indicates that this state of CH 4 + takes up a conformation that is almost square coplanar with an extremely low inversion barrier. The 2 B 2 ionized states of SiH 4 , GeH 4 and SnH 4 though considerably distorted do not become coplanar.