Gain compression

Abstract: A fully integrated technique for wideband cancellation of transmitter (TX) self-interference (SI) in the RF domain is proposed for multiband frequency-division duplexing (FDD) and full-duplex (FD) wireless applications. Integrated wideband SI cancellation (SIC) in the RF domain is accomplished through: 1) a bank of tunable, reconfigurable second-order high-Q RF bandpass filters in the canceller that emulate the antenna interface’s isolation (essentially frequency-domain equalization in the RF domain) and 2) a linear $N$ -path $G_m$ - $C$ filter implementation with embedded variable attenuation and phase shifting. A 0.8–1.4 GHz receiver (RX) with the proposed wideband SIC circuits is implemented in a 65 nm CMOS process. In measurement, $>20\;\text{MHz}\;20\;\text{dB}$ cancellation bandwidth (BW) is achieved across frequency-selective antenna interfaces: 1) a custom-designed LTE-like 0.780/0.895 GHz duplexer with TX/RX isolation peak magnitude of 30 dB, peak group delay of 11 ns, and 7 dB magnitude variation across the TX band for FDD and 2) a 1.4 GHz antenna pair for FD wireless with TX/RX isolation peak magnitude of 32 dB, peak group delay of 9 ns, and 3 dB magnitude variation over 1.36–1.38 GHz. For FDD, SIC enhances the effective out-of-band (OOB) IIP3 and IIP2 to $+\text{25}\text{-}27\;\text{dBm}$ and $+90\;\text{dBm}$ , respectively (enhancements of 8–10 and 29 dB, respectively). For FD, SIC eliminates RX gain compression for as high as $-8\;\text{dBm}$ of peak in-band (IB) SI, and enhances effective IB IIP3 and IIP2 by 22 and 58 dB.

Abstract: We investigate the impact of reduced photon lifetime on the static and dynamic performance of high-speed, oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is reduced by a shallow-surface etch that lowers the reflectivity of the top mirror. From an analysis of the dependence of slope efficiency on mirror loss (etch depth) and temperature, we deduce values for the internal quantum efficiency and the internal optical loss and their dependencies on temperature. From an analysis of the dependence of the small-signal-modulation response on photon lifetime (etch depth) and temperature, we deduce values for differential gain and gain compression, and their dependencies on photon lifetime and temperature. We find a tradeoff between high resonance frequency and low damping for speed enhancement, leading to an optimum photon lifetime close to 3 ps for this particular VCSEL design that enables a modulation bandwidth of 23 GHz and error-free transmission at 40 Gb/s.

Abstract: Modulating the intensity of light-emitting diodes (LEDs) with analog signals, especially in the case of the bipolar optical orthogonal frequency-division-multiplexing (O-OFDM) signal, leads to significant signal degradation due to LED nonlinearity. The LED transfer function distorts the signal amplitude and forces the lower peaks to be clipped at the LED turn-on voltage. Additionally, the upper peaks are purposely clipped before modulating the LED to avoid chip overheating. The induced distortion can be controlled by optimizing the bias point or backing-off the average O-OFDM signal power. In this letter, a model that incorporates amplitude distortion and that provides a parameterized upper clipping is proposed. Through Monte Carlo simulations, the model can be used to determine the optimum bias point and to optimize the O-OFDM signal power. In this context, a novel concept of soft-clipping of the upper peaks is presented. It is shown that soft-clipping is an effective approach to reduce nonlinearity distortion and to enhance symbol error performance.

Abstract: It is shown experimentally that the modulation bandwidth of quantum well lasers can be reduced by a factor of six due to carrier transport across undoped layers of the laser as in the separate confinement heterostructure (SCH). Analytical expressions are given for the modulation response function, resonance frequency, damping rate and K factor to include carrier transport, and it is shown that carrier transport is responsible for a low-frequency rolloff which limits the modulation response of quantum-well lasers. It also shown that carrier transport leads to a reduction in the effective differential gain, while the gain compression factor remains largely unaffected by it. >