Topic
Farad
About: Farad is a research topic. Over the lifetime, 253 publications have been published within this topic receiving 3059 citations. The topic is also known as: F.
Papers published on a yearly basis
Papers
TL;DR: In this paper, the authors demonstrate the usefulness and high sensitivity of the atomic force microscope (AFM) for imaging surface dielectric properties and for potentiometry through the detection of electrostatic forces.
Abstract: We demonstrate the usefulness and high sensitivity of the atomic force microscope (AFM) for imaging surface dielectric properties and for potentiometry through the detection of electrostatic forces Electric forces as small as 10−10 N have been measured, corresponding to a capacitance of 10−19 farad The sensitivity of our AFM should ultimately allow us to detect capacitances as low as 8×10−22 F The method enables us to detect the presence of dielectric material over Si, and to measure the voltage in a p‐n junction with submicron spatial resolution
743 citations
Patent•
16 Dec 1968TL;DR: In this paper, a method for predicting the capacity of nickel-cadmium batteries with a standard reference curve that indicates battery capacitance as a function of the state-of-charge was proposed.
Abstract: Method for predicting the capacity of nickel-cadmium batteries with a standard reference curve that indicates battery capacitance as a function of the state-of-charge of a given nickel-cadmium battery type wherein the standard reference curve is used with the measurement of the capacitance of any battery of the given type to indicate the state-of-charge of the battery.
115 citations
17 Mar 1997
TL;DR: In this article, a sensitive and simple technique for parasitic interconnect capacitance measurement with 0.01 fF sensitivity is presented, which is based upon an efficient test structure design.
Abstract: In this paper, a sensitive and simple technique for parasitic interconnect capacitance measurement with 0.01 fF sensitivity is presented. This on-chip technique is based upon an efficient test structure design. No reference capacitor is needed. Only a DC current meter is required for its measurement. We have applied this technique to extract various interconnect geometry capacitances and compared the results to those from 3D simulations.
75 citations
24 Aug 2001
TL;DR: In this article, a high density and low parasitic capacitance electrical through-wafer interconnects to an array of capacitive micromachined ultrasonic transducers (CMUTs) on a silicon wafer is presented.
Abstract: This paper presents a technology for high density and low parasitic capacitance electrical through-wafer interconnects to an array of capacitive micromachined ultrasonic transducers (CMUTs) on a silicon wafer. Vertical wafer feedthroughs (interconnects) connect an array of sensors or actuators from the front side (transducer side) to the backside (packaging side) of the wafer. A 20 to 1 high aspect ratio 400 /spl mu/m long and 20 /spl mu/m diameter interconnect is achieved by using deep reactive ion etching (DRIE). Reduction of the parasitic capacitance of the polysilicon pads to the substrate can be achieved by using reversed-biased pn-junction diodes operating in the depletion region. A parasitic capacitance of 0.3 pF has been achieved by this means. This three-dimensional architecture allows for elegant packaging through simple flip-chip bonding of the chip's back side to a printed circuit board (PCB) or a signal processing wafer.
71 citations
TL;DR: In this paper, a recently completed calculable cross capacitor in conjunction with a previously described collection of ac and dc bridges has made possible a highly accurate measurement of the farad and the ohm.
Abstract: A recently completed calculable cross capacitor in conjunction with a previously described collection of ac and dc bridges has made possible a highly accurate measurement of the farad and the ohm. The cross capacitor and its auxiliary equipment, as well as those components of the measurement system which have not been covered in prior publications, are described in detail. The measurements indicate that the National Bureau of Standards (NBS) unit of capacitance is given by FNBS = 1 F + 1.787 ?F, and that the NBS unit of resistance is given by ?NBS = 1 ? - 0.819 ??.
62 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2021 | 4 |
| 2020 | 7 |
| 2019 | 6 |
| 2018 | 14 |
| 2017 | 9 |
| 2016 | 20 |