Topic
Electrostatic force microscope
About: Electrostatic force microscope is a research topic. Over the lifetime, 1879 publications have been published within this topic receiving 66594 citations. The topic is also known as: Electrostatic Force Microscopy.
Papers published on a yearly basis
Papers
TL;DR: The atomic force microscope as mentioned in this paper is a combination of the principles of the scanning tunneling microscope and the stylus profilometer, which was proposed as a method to measure forces as small as 10-18 N. As one application for this concept, they introduce a new type of microscope capable of investigating surfaces of insulators on an atomic scale.
Abstract: The scanning tunneling microscope is proposed as a method to measure forces as small as 10-18 N. As one application for this concept, we introduce a new type of microscope capable of investigating surfaces of insulators on an atomic scale. The atomic force microscope is a combination of the principles of the scanning tunneling microscope and the stylus profilometer. It incorporates a probe that does not damage the surface. Our preliminary results in air demonstrate a lateral resolution of 30 A and a vertical resolution less than 1 A.
13,683 citations
TL;DR: It is shown that the ambient degradation of BP can be managed effectively when the flakes are sufficiently passivated, and the strategy for enhancing BP environmental stability will accelerate efforts to implement BP in electronic and optoelectronic applications.
Abstract: Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111) versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 h in ambient, followed by a ∼103 decrease in FET current on/off ratio and mobility after 48 h. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to ma...
1,370 citations
TL;DR: A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described, achieving high resolution under ultrahigh-vacuum conditions with the force microscope for reactive surfaces.
Abstract: Achieving high resolution under ultrahigh-vacuum conditions with the force microscope can be difficult for reactive surfaces, where the interaction forces between the tip and the samples can be relatively large. A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described. The reconstructed silicon (111)-(7x7) surface was imaged in a noncontact mode by force microscopy with atomic resolution (6 angstroms lateral, 0.1 angstrom vertical).
1,182 citations
TL;DR: In this paper, a method was presented to measure the energy dissipated by the tip-sample interaction in tapping-mode atomic force microscopy (AFM) using a 4 N/m cantilever with an initial amplitude of 25 nm tapping on a hard substrate at 74 kHz.
Abstract: A method is presented to measure the energy dissipated by the tip–sample interaction in tapping-mode atomic force microscopy (AFM). The results show that if the amplitude of the cantilever is held constant, the sine of the phase angle of the driven vibration is then proportional to changes in the tip–sample energy dissipation. This means that images of the cantilever phase in tapping-mode AFM are closely related to maps of dissipation. The maximum dissipation observed for a 4 N/m cantilever with an initial amplitude of 25 nm tapping on a hard substrate at 74 kHz is about 0.3 pW.
895 citations
TL;DR: In the presence of high concentrations (> 3 M) of divalent cations, where the electrostatic force can be completely ignored, another repulsive force was observed with silicon nitride tips on mica and this repulsion is attributed to the hydration force.
808 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2024 | 13 |
| 2023 | 13 |
| 2022 | 38 |
| 2021 | 30 |
| 2020 | 35 |
| 2019 | 31 |