Abstract: Silicon photonics is advancing rapidly in performance and capability with multiple fabrication facilities and foundries having advanced passive and active devices, including modulators, photodetectors, and lasers. Integration of photonics with electronics has been key to increasing the speed and aggregate bandwidth of silicon photonics based assemblies, with multiple approaches to achieving transceivers with capacities of 1.6 Tbps and higher. Progress in electronics has been rapid as well, with state-of-the-art chips including switches having many tens of billions of transistors. However, the electronic system performance is often limited by the input/output (I/O) and the power required to drive connections at a speed of tens of Gbps. Fortunately, the convergence of progress in silicon photonics and electronics means that co-packaged silicon photonics and electronics enable the continued progress of both fields and propel further innovation in both.

Abstract: Stretchable electronic circuits are critical for soft robots, wearable technologies and biomedical applications. Development of sophisticated stretchable circuits requires new materials with stable conductivity over large strains, and low-resistance interfaces between soft and conventional (rigid) electronic components. To address this need, we introduce biphasic Ga–In, a printable conductor with high conductivity (2.06 × 106 S m−1), extreme stretchability (>1,000%), negligible resistance change when strained, cyclic stability (consistent performance over 1,500 cycles) and a reliable interface with rigid electronics. We employ a scalable transfer-printing process to create various stretchable circuit board assemblies that maintain their performance when stretched, including a multilayer light-emitting diode display, an amplifier circuit and a signal conditioning board for wearable sensing applications. The compatibility of biphasic Ga–In with scalable manufacturing methods, robust interfaces with off-the-shelf electronic components and electrical/mechanical cyclic stability enable direct conversion of established circuit board assemblies to soft and stretchable forms. Conductors made of a mixture of liquid and solid domains of Ga–In alloy can be stretched over 1,000%, keeping almost constant conductivity, and used to connect commercial electronic components and realize stretchable multilayer printed circuit boards.

Abstract: The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications1. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the quantum chip in a dilution refrigerator and the room-temperature electronics. Advanced lithography supports the fabrication of both control electronics and qubits in silicon using technology compatible with complementary metal oxide semiconductors (CMOS)2. When the electronics are designed to operate at cryogenic temperatures, they can ultimately be integrated with the qubits on the same die or package, overcoming the ‘wiring bottleneck’3–6. Here we report a cryogenic CMOS control chip operating at 3 kelvin, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20 millikelvin. We first benchmark the control chip and find an electrical performance consistent with qubit operations of 99.99 per cent fidelity, assuming ideal qubits. Next, we use it to coherently control actual qubits encoded in the spin of single electrons confined in silicon quantum dots7–9 and find that the cryogenic control chip achieves the same fidelity as commercial instruments at room temperature. Furthermore, we demonstrate the capabilities of the control chip by programming a number of benchmarking protocols, as well as the Deutsch–Josza algorithm10, on a two-qubit quantum processor. These results open up the way towards a fully integrated, scalable silicon-based quantum computer. A cryogenic CMOS control chip operating at 3 K is used to demonstrate coherent control and simple algorithms on silicon qubits operating at 20 mK.

Abstract: Electronics with skin- or tissue-like mechanical properties, including low stiffness and high stretchability, can be used to create intelligent technologies for application in areas such as health monitoring and human–machine interactions. Stretchable transistors that provide signal-processing and computational functions will be central to the development of this technology. Here, we review the development of stretchable transistors and functional circuits, examining progress in terms of materials and device engineering. We consider the three established approaches for creating stretchable transistors: buckling engineering, stiffness engineering and intrinsic-stretchability engineering. We also explore the current capabilities of stretchable transistors and circuits in human-integrated electronics and consider the challenges involved in delivering advanced applications. This Review examines the three established approaches for creating stretchable transistors—buckling engineering, stiffness engineering and intrinsic-stretchability engineering—and explores the current and future capabilities of stretchable transistors and circuits in human-integrated electronics.

Abstract: GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent transport characteristics and ability to generate free carriers via polarization doping, GaN is expected to be an important technology for ultra-low temperature and quantum computing electronics. Finally, given the increasing cost of hardware prototyping of new devices and circuits, the use of high-fidelity device models and data-driven modeling approaches for technology-circuit co-design are projected to be the trends of the future. In this regard, physically inspired, mathematically robust, less computationally taxing, and predictive modeling approaches are indispensable. With all these and future efforts, we envision GaN to become the next Si for electronics.

Abstract: Thermal management is the most critical technology challenge for modern electronics. Recent key materials innovation focuses on developing advanced thermal interface of electronic packaging for achieving efficient heat dissipation. Here, for the first time we report a record-high performance thermal interface beyond the current state of the art, based on self-assembled manufacturing of cubic boron arsenide (s-BAs). The s-BAs exhibits highly desirable characteristics of high thermal conductivity up to 21 W/m·K and excellent elastic compliance similar to that of soft biological tissues down to 100 kPa through the rational design of BAs microcrystals in polymer composite. In addition, the s-BAs demonstrates high flexibility and preserves the high conductivity over at least 500 bending cycles, opening up new application opportunities for flexible thermal cooling. Moreover, we demonstrated device integration with power LEDs and measured a superior cooling performance of s-BAs beyond the current state of the art, by up to 45 °C reduction in the hot spot temperature. Together, this study demonstrates scalable manufacturing of a new generation of energy-efficient and flexible thermal interface that holds great promise for advanced thermal management of future integrated circuits and emerging applications such as wearable electronics and soft robotics.

Abstract: Ultraflexible optical devices have been used extensively in next-generation wearable electronics owing to their excellent conformability to human skins. Long-term health monitoring also requires the integration of ultraflexible optical devices with an energy-harvesting power source; to make devices self-powered. However, system-level integration of ultraflexible optical sensors with power sources is challenging because of insufficient air operational stability of ultraflexible polymer light-emitting diodes. Here we develop an ultraflexible self-powered organic optical system for photoplethysmogram monitoring by combining air-operation-stable polymer light-emitting diodes, organic solar cells, and organic photodetectors. Adopting an inverted structure and a doped polyethylenimine ethoxylated layer, ultraflexible polymer light-emitting diodes retain 70% of the initial luminance even after 11.3 h of operation under air. Also, integrated optical sensors exhibit a high linearity with the light intensity exponent of 0.98 by polymer light-emitting diode. Such self-powered, ultraflexible photoplethysmogram sensors perform monitoring of blood pulse signals as 77 beats per minute. Flexible electronic devices remain an attractive technology for optical sensor applications that require long-term health monitoring and conformability on human skin. Here, the authors report an ultrathin self-powered integrated organic optical system for plethysmogram monitoring.

Abstract: The ability to synthesize laser-induced graphene (LIG) on cellulosic materials such as paper opens the door to a wide range of potential applications, from consumer electronics to biomonitoring. In...

Abstract: The cooling or thermal management issues are facing critical challenges with the continuous miniaturization and rapid increase of heat flux of electronic devices. Significant efforts have been made to develop high-efficient cooling and flexible thermal management solutions and corresponding design tools. This article reviews the latest progress and the state-of-the-art in electronic cooling, which could help inspire future research. The commonly used methods in electronic cooling, classified into direct and indirect cooling, are reviewed and discussed in detail. Direct cooling consists of air cooling, spray and jet impingement cooling, immersion cooling, and droplet electrowetting. As for indirect cooling, the most popular and hot topics of using microchannel, heat pipe, vapour chamber, thermoelectric, and PCM are overviewed. The effectiveness of the thermal management methods for different-level requirements of electronic cooling and the ways how heat transfer capability can be improved are also introduced in detail. Meanwhile, the pros and cons of these thermal management methods are discussed based on their inherent heat transfer performances/characteristics, optimisation methods, and relevant applications. In addition, the current challenges of electronic cooling and thermal management technologies are explored, along with the outlook of possible future advances.

Abstract: Security is a critical aspect in modern circuit design, but research into hardware security at the device level is rare as it requires modification of existing technology nodes. With the increasing challenges facing the semiconductor industry, interest in out-of-the-box security solutions has grown, even if this implies introducing novel materials such as two-dimensional layered semiconductors. Here, we show that high-performance, low-voltage, two-dimensional black phosphorus field-effect transistors (FETs) that have reconfigurable polarities are suitable for hardware security applications. The transistors can be dynamically switched between p-FET and n-FET operation through electrostatic gating and can achieve on–off ratios of 105 and subthreshold swings of 72 mV dec−1 at room temperature. Using the transistors, we create inverters that exhibit gains of 33.3 and are fully functional at a supply voltage of 0.2 V. We also create a security primitive circuit with polymorphic NAND/NOR obfuscation functionality with sub-1-V operation voltages, and the robustness of the polymorphic gate against power supply variations is tested using Monte Carlo simulations. Transistors that use two-dimensional black phosphorus as the active material can dynamically switch between p-type and n-type operation, and can be used to create security primitive circuits with polymorphic NAND/NOR obfuscation functionality.

Abstract: Microdevice integrating energy storage with wireless charging could create opportunities for electronics design, such as moveable charging. Herein, we report seamlessly integrated wireless charging micro-supercapacitors by taking advantage of a designed highly consistent material system that both wireless coils and electrodes are of the graphite paper. The transferring power efficiency of the wireless charging is 52.8%. Benefitting from unique circuit structure, the intact device displays low resistance and excellent voltage tolerability with a capacitance of 454.1 mF cm−2, superior to state-of-the-art conventional planar micro-supercapacitors. Besides, a record high energy density of 463.1 μWh cm−2 exceeds the existing metal ion hybrid micro-supercapacitors and even commercial thin film battery (350 μWh cm−2). After charging for 6 min, the integrated device reaches up to a power output of 45.9 mW, which can drive an electrical toy car immediately. This work brings an insight for contactless micro-electronics and flexible micro-robotics. Miniaturized energy storage devices integrated with wireless charging bring opportunities for next generation electronics. Here, authors report seamlessly integrated wireless charging micro-supercapacitors with high energy density capable of driving a model electrical car.

Abstract: The expansion on the use of Electric Vehicles demands new mechanisms to ease the charging process, making it autonomous and with a reduced user intervention. This paper reviews the technologies applied to the wireless charge of Electric Vehicles. In particular, it focuses on the technologies based on the induction principle, the capacitive-based techniques, those that use radiofrequency waves and the laser powering. As described, the convenience of each technique depends on the requirements imposed on the wireless power transfer. Specifically, we can state that the power level, the distance between the power source and the electric vehicle or whether the transfer is executed with the vehicle on the move or not or the cost are critical parameters that need to be taken into account to decide which technology to use. In addition, each technique requires some complementary electronics. This paper reviews the main components that are incorporated into these systems and it provides a review of their most relevant configurations.

Abstract: Flexible electronics as an emerging technology has demonstrated potential for applications in various fields. With the advent of the Internet of Things era, countless flexible electronic systems need to be developed and deployed. However, materials and fabrication technologies are the key factors restricting the development and commercialization of flexible electronics. Here we report a simple, fast, and green flexible electronics preparation technology. The stencil printing method is adopted to pattern liquid metal on the thermoplastic polyurethane membrane prepared by electrospinning. Besides, with layer-by-layer assembly, flexible circuits, resistors, capacitors, inductors, and their composite devices can be prepared parametrically. Furthermore, these devices have good stretchability, air permeability, and stability, while they are multilayered and reconfigurable. As proof, this strategy is used to fabricate flexible displays, flexible sensors, and flexible filters. Finally, flexible electronic devices are also recycled and reconfigured.

Abstract: Transient supercapacitors (TSCs), a new type of advanced supercapacitor (SC) that can completely dissolve with environmentally and biologically benign byproducts in vivo after performing their specified function, have broad application prospects in the fields of green electronics, implantable devices, personalized medicine, military security, and other fields. However, research on TSCs is still in its infancy, and there are still many challenges to be solved, such as the complex preparation process and low energy density. Herein, we report a facile superassembly manufacturing method for an implantable and fully biodegradable three-dimensional network Zn@PPy hybrid electrode by screen printing and electrochemical deposition. The produced superassembled interdigital pseudocapacitor exhibits superior electrochemical performances due to the high capacitances and excellent rate performances of the pattern Zn@PPy electrode and NaCl/agarose electrolyte. An optimized biodegradable SC exhibits a maximum energy density of 0.394 mW h cm-2 and can be fully degraded in vivo in 30 days without any adverse effects in the host organism. This work provides a new platform for transient electronic technology for diverse implantable electronic applications.

Abstract: With the development of the internet-of-things for applications such as wearables and packaging, a new class of electronics is emerging, characterized by the sheer number of forecast units and their short service-life. Projected to reach 27 billion units in 2021, connected devices are generating an exponentially increasing amount of electronic waste (e-waste). Fueled by the growing e-waste problem, the field of sustainable electronics is attracting significant interest. Today, standard energy-storage technologies such as lithium-ion or alkaline batteries still power most of smart devices. While they provide good performance, the nonrenewable and toxic materials require dedicated collection and recycling processes. Moreover, their standardized form factor and performance specifications limit the designs of smart devices. Here, exclusively disposable materials are used to fully print nontoxic supercapacitors maintaining a high capacitance of 25.6 F g-1 active material at an operating voltage up to 1.2 V. The presented combination of digital material assembly, stable high-performance operation, and nontoxicity has the potential to open new avenues within sustainable electronics and applications such as environmental sensing, e-textiles, and healthcare.

Abstract: The emergence of electronic devices has brought earth-shaking changes to people’s life. However, an external power source may become indispensable to the electronic devices due to the limited capacity of batteries. As one of the possible solutions for the external power sources, the triboelectric nanogenerator (TENG) provides a novel idea to the increasing number of personal electronic devices. TENG is a new type of energy collector, which has become a hot spot in the field of nanotechnology. It is widely used at the acquisition and conversion of mechanical energy to electric energy through the principle of electrostatic induction. On this basis, the TENG could be integrated with the energy storage system into a self-powered system, which can supply power to the electronic devices and make them work continuously. In this review, TENG’s basic structure as well as its working process and working mode are firstly discussed. The integration method of TENGs with energy storage systems and the related research status are then introduced in detail. At the end of this paper, we put forward some problems and discuss the prospect in the future.

Abstract: This review focuses on molecular ensemble junctions in which the individual molecules of a monolayer each span two electrodes. This geometry favors quantum mechanical tunneling as the dominant mechanism of charge transport, which translates perturbances on the scale of bond lengths into nonlinear electrical responses. The ability to affect these responses at low voltages and with a variety of inputs, such as de/protonation, photon absorption, isomerization, oxidation/reduction, etc., creates the possibility to fabricate molecule-scale electronic devices that augment; extend; and, in some cases, outperform conventional semiconductor-based electronics. Moreover, these molecular devices, in part, fabricate themselves by defining single-nanometer features with atomic precision via self-assembly. Although these junctions share many properties with single-molecule junctions, they also possess unique properties that present a different set of problems and exhibit unique properties. The primary trade-off of ensemble junctions is complexity for functionality; disordered molecular ensembles are significantly more difficult to model, particularly atomistically, but they are static and can be incorporated into integrated circuits. Progress toward useful functionality has accelerated in recent years, concomitant with deeper scientific insight into the mediation of charge transport by ensembles of molecules and experimental platforms that enable empirical studies to control for defects and artifacts. This review separates junctions by the trade-offs, complexity, and sensitivity of their constituents; the bottom electrode to which the ensembles are anchored and the nature of the anchoring chemistry both chemically and with respect to electronic coupling; the molecular layer and the relationship among electronic structure, mechanism of charge transport, and electrical output; and the top electrode that realizes an individual junction by defining its geometry and a second molecule–electrode interface. Due to growing interest in and accessibility of this interdisciplinary field, there is now sufficient variety in each of these parts to be able to treat them separately. When viewed this way, clear structure–function relationships emerge that can serve as design rules for extracting useful functionality.

Abstract: Soft electronics and robotics are in increasing demand for diverse applications. However, soft devices typically lack rigid enclosures which can increase their susceptibility to damage and lead to failure and premature disposal. This creates a need for soft and stretchable functional materials with resilient and regenerative properties. Here we show a liquid metal-elastomer-plasticizer composite for soft electronics with robust circuitry that is self-healing, reconfigurable, and ultimately recyclable. This is achieved through an embossing technique for on-demand formation of conductive liquid metal networks which can be reprocessed to rewire or completely recycle the soft electronic composite. These skin-like electronics stretch to 1200% strain with minimal change in electrical resistance, sustain numerous damage events under load without losing electrical conductivity, and are recycled to generate new devices at the end of life. These soft composites with adaptive liquid metal microstructures can find broad use for soft electronics and robotics with improved lifetime and recyclability. There is growing interest in flexible electronic devices, though their soft nature can make them vulnerable to damage. Here, a liquid metal-elastomer composite is shown to self-heal, can be stretched 1200% with limited change in electrical resistance, and the conductive circuit can be reconfigured.

Abstract: Artificial synaptic devices and systems have become hot topics due to parallel computing, high plasticity, integration of storage, and processing to meet the challenges of the traditional Von Neumann computers. Currently, two-terminal memristors and three-terminal transistors have been mainly developed for high-density storage with high switching speed and high reliability because of the adjustable resistivity, controllable ion migration, and abundant choices of functional materials and fabrication processes. To achieve the low-cost, large-scale, and easy-process fabrication, solution-processed techniques have been extensively employed to develop synaptic electronics towards flexible and highly integrated three-dimensional (3D) neural networks. Herein, we have summarized and discussed solution-processed techniques in the fabrication of two-terminal memristors and three-terminal transistors for the application of artificial synaptic electronics mainly reported in the recent five years from the view of fabrication processes, functional materials, electronic operating mechanisms, and system applications. Furthermore, the challenges and prospects were discussed in depth to promote solution-processed techniques in the future development of artificial synapse with high performance and high integration.