TL;DR: In this article, an analytical review of the last five or six years of research and development in SiC is presented, which outlines the major achievements in single crystal growth and device technology.
Abstract: The present paper is an analytical review of the last five or six years of research and development in SiC. It outlines the major achievements in single crystal growth and device technology. Electrical performance of SiC devices designed during these years and some new trends in SiC electronics are also discussed. During the 1980s the studies on sublimation and liquid-phase epitaxial growth of SiC single crystal were continued successfully. At that time, such methods as chemical vapour deposition, thermal oxidation, 'dry' plasma etching and ion implantation which yielded good results with silicon, came into use. As a result of the technological progress, discrete devices appeared, which incorporated the potential advantages of SiC as a wide bandgap material. Among these were high temperature (500-600 degrees C) rectifier diodes and field-effect transistors, high efficiency light-emitting diodes for the short-wave region of the visible spectrum, and detectors of ultraviolet radiation. It should be stressed that the devices were of commercial quality and could be applied in various fields (control systems of automobile engines, aerospace apparatus, geophysical equipment, colour displays in information systems, etc.). The developments in technology and the promising results of research on electrical performance of the devices already available give hope that in the near future SiC may become the basic material for power microwave devices, and for thermo- and radiation-resistant integrated circuits. This process can be stimulated by further perfection of single-crystal substrates of large area, by development of stable high temperature ohmic contacts, micro- and heterostructures.
TL;DR: In this paper, a new integrated VMD and a method for making the same was described, and a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures.
Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.
TL;DR: In this paper, the authors proposed a barrier-well-barrier structure with the well being conductive oligomer for microelectronic semiconductor integrated circuit devices integrated on a common substrate with molecular electronic devices.
Abstract: Microelectronic semiconductor integrated circuit devices integrated on a common substrate with molecular electronic devices, having barrier-well-barrier structure with the well being conductive oligomer.
TL;DR: In this paper, it was shown that magnetically generated forces can be made much larger than electrostatic forces even for 1 μm air gaps, and that efficiency arguments are moot unless microfabricated actuators shrink further in size (in which case heat dissipation is a problem).
Abstract: There has been a growing interest in microactuation, which we define as the ability to achieve motions with micron-level precision, and in microfabricated actuators, which we define as actuators which are themselves micron scale in size. Recent articles on microfabricated actuators have suggested that electrostatic approaches are more favorable than magnetic approaches. This article revisits these issues from the perspective of microactuation with application to microfabricated actuators. We show that magnetically generated forces can be made much larger than electrostatic forces even for 1 μm air gaps, that efficiency arguments are moot unless microfabricated actuators shrink further in size (in which case heat dissipation is a problem), and that the benefits of integration of electronics with a microactuator are questionable. We also show, by direct comparison of a magnetic and an electrostatic microfabricated actuator, that magnetic approaches which are wholly compatible with microelectronics fabrication can produce forces comparable to those from electrostatic approaches. From these arguments we conclude that the case for magnetic microactuation and magnetically driven microfabricated actuators is compelling, and that the advantages of microfabrication of actuators are not clear.
TL;DR: In this article, a heat sink comprising a thin plate made of a heat conducting material, which plate includes a series of small tapered chimneys extending therethrough, was adapted to fit over and parallel to an entire circuit board, thermally connecting with the semiconductors on the board, the chimneys being spaced inbetween the semiconductor and facilitating natural or forced airflow from the area between the plate and the printed circuit board to the area outside by means of the low pressure drop created by their tapering, the heat sink taking very little vertical space in the electronics package including the printed
Abstract: A heat sink comprising a thin plate made of a heat conducting material, which plate includes a series of small tapered chimneys extending therethrough, the plate being adapted to fit over and parallel to an entire circuit board, thermally connecting with the semiconductors on the board, the chimneys being spaced inbetween the semiconductors and facilitating natural or forced airflow from the area between the plate and the printed circuit board to the area outside by means of the low pressure drop created by their tapering, the heat sink taking very little vertical space in the electronics package including the printed circuit board while providing effective heat dissipation and shielding from electro-magnetic radiation and/or radio frequency interference for the semiconductors on the board.
TL;DR: In this paper, a sheet battery is used as a substrate for an electronic circuit to eliminate the weight and bulk of a battery as a separate circuit component and also to reduce the need for separate components for the battery, a substitute material on which the circuit are placed, connection of the circuit to the battery and an encasement structure.
Abstract: The invention relates to a sheet battery (1) used as a substrate for an electronic circuit. The technical problem associated with prior battery powered electronic devices in that construction of the prior devices require separate components for the battery, a substitute material on which the electronic circuits are placed, connection of the circuit to the battery, and an encasement structure. The invention solves this technical problem by using sheet battery material (1) as a substrate for electronic circuits (52) for electronic devices (50, 51, 52, 53 and 54) to eliminate the weight and bulk of a battery as a separate circuit component and also to eliminate the weight and bulk of fiberglass substrate or flex substrate as a printed circuit material. Inserts (70 and 75) with wiring built in can give vertical wiring between two or more circuit layers and can support electronic components which have leads connecting wiring on more than one layer of a printed circuit. Connector clips (80) inserted when the connector pins are polarized target connection to power (2) and to ground (3) components of one or more layers of sheet battery.
TL;DR: In this article, the authors provide guidelines for preparing, documenting, and presenting operating and support (O and S) cost estimates to the Office of the Secretary of Defense (OSD) Cost Analysis Improvement Group (CAIG).
Abstract: : This document provides guidelines for preparing, documenting, and presenting operating and support (O and S) cost estimates to the Office of the Secretary of Defense (OSD) Cost Analysis Improvement Group (CAIG). It discusses the requirements for O and S cost estimates, provides instructions for developing such estimates, and presents standard cost element structures (CES) and definitions for specific categories of weapon systems including aircraft, ships, missiles, combat vehicles, and electronic systems. Documentations and presentation requirements also are provided to assist in preparing for CAIG reviews. The primary objective of the guidelines is to achieve consistent, well- documented O and S cost estimates that can be replicated and verified by an independent party.
TL;DR: In this paper, a possible strategy which meets the compatibility issue without compromising too much the flexibility is discussed, which relies on the development of so-called closed process modules which can be added at some point of the integrated circuit process, without causing any change in the characteristics of the electronics.
Abstract: Despite the many years of research in the silicon sensor field and the continuously growing effort, very little commercial success has been obtained so far. This is largely due to the problems encountered in transferring the technology involved from the research laboratory to industry for production. In order to ease this problem, compatibility with integrated circuit processing must be preserved while developing process flows for integrated silicon sensors. In this paper a possible strategy, which meets the compatibility issue without compromising too much the flexibility, is discussed. This approach relies on the development of so-called ‘closed’ process modules which can be added at some point of the integrated circuit process, without causing any change in the characteristics of the electronics. The advantages of such an approach are illustrated through typical examples.
TL;DR: Storey's book as mentioned in this paper provides electrical engineering students with a set of material suitable for introductory courses in analogue and digital design, and is suitable for both introductory and postgraduate courses.
Abstract: Neil Storey's book provides Electrical Engineering students with a set of material suitable for introductory courses in analogue and digital design.
TL;DR: In this article, the use of silicon drift detectors in high resolution low energy (1 − 10 keV) X-ray spectroscopy is reviewed. And the working principles of the detector are briefly described.
Abstract: The use of silicon drift detectors in high resolution low energy (1–10 keV) X-ray spectroscopy is reviewed. The working principles of the detector are briefly described. The paper discusses different topologies intended to optimize the detector resolution within the considered energy range. The necessity of integrated front-end electronics to take full advantage of the low anode capacitance is highlighted. Electronic devices and circuit configurations suited for integration on the detector are summarized and the best results obtained on test chips are presented.
TL;DR: In this article, the authors present a method and apparatus for the testing of an integrated circuit which is packaged in a housing with leads projecting from the housing and contact elements disposed along one or more of the surfaces of the housing.
Abstract: Disclosed is a method and apparatus for the testing of an integrated circuit which is packaged in a housing with leads projecting from the housing and contact elements disposed along one or more of the surfaces of the housing. In the apparatus a plurality of electrical or electronic devices may be temporarily connected to the contact elements during testing of the integrated circuit at an automatic handler test station.
TL;DR: An improved printed circuit card or second level electronics package (circuit board) including a laminate of lossy material and dielectric material between the voltage supply plane (Vcc) and the ground (GND) plane as discussed by the authors suppresses common mode noise that is generated by active components on the card or circuit board
Abstract: An improved printed circuit card or second level electronics package (circuit board) including a laminate of lossy material and dielectric material between the voltage supply plane (Vcc) and the ground (GND) plane The laminate suppresses common mode noise that is generated by active components on the card or circuit board
TL;DR: Theorems and techniques of linear circuit analysis are studied, as well as non-linear circuit analysis, which is concerned with two-port networks.
Abstract: This 1992 book provides a comprehensive introduction to the theory of electrical circuits for students in the physical sciences taking a first course in electronics. The methods of circuit analysis are clearly explained and illustrated with the aid of numerous worked examples. Applications of the theory relevant to the fields of electronics, telecommunications and power systems are treated throughout. These sections will prepare students for more advanced courses. The text is written for first and second year undergraduate courses in electronics for science and engineering students. The more specialised sections also provide some advanced material which is covered in third year courses.
TL;DR: In this paper, the readout of scintillators by silicon photodiodes is reviewed and the methods of using them together are described with special emphasis on the optimization of the signal-to-noise ratio.
Abstract: The readout of scintillators by silicon photodiodes is reviewed. The use of photodiodes, rather than that of phototubes, is mandatory in modern particle physics detectors due to the presence of strong magnetic fields, but such devices present also advantages in many other domains. After a brief summary of photodiode, scintillator and low-noise electronics characteristics, the methods of using them together are described with special emphasis on the optimization of the signal-to-noise ratio.
TL;DR: In this article, a metal plate is used to support the printed circuit board or film, the area of which is the same as or greater than that of the board or the film, and a plug is fitted on the metal plate in the region of the print circuit board in the immediate vicinity of the power components.
Abstract: The invention relates to a housing for installation in motor vehicles to contain SMD electronic components on a multi-layer board or film. Here there is a metal plate to support the printed circuit board or film, the area of which is the same as or greater than that of the printed circuit board or film. The latter is arranged to be insulated from and espouse the surface of the metal plate, whereby if the area of the metal plate is greater than the board, power components are fitted on the uncovered part of the metal plate and if the area is the same as the film, the power components are fitted on the film. In addition, a plug is fitted on the metal plate in the region of the printed circuit board or film in the immediate vicinity of the power components. Finally, there are mechanical means which form a housing together with the metal plate. This provides a simple and economically manufactured housing.
TL;DR: In this article, the authors describe progress over the years in developing low noise, low power and miniaturized electronics for room temperature X-ray detectors, and present the current status in processing electronics in their laboratory.
Abstract: The paper describes progress over the years in developing low noise, low power and miniaturized electronics for room temperature X-ray detectors. The current status in processing electronics in our laboratory is presented. Design difficulties of low noise amplification electronics for highly dense, two-dimensional array systems are addressed. The results with HgI2 single detectors, as well as with HgI2 array detectors, are shown for space and synchrotron radiation applications. Directions for future developments are discussed.
TL;DR: In this article, the authors describe a microprocessor-based design that addresses microwave amplitude shift, C-field, Rabi pulling, microwave spectral purity, and modulation distortion, with automatic lock-up and long term operation without operator intervention.
Abstract: A description is given of a new electronics design that addresses microwave amplitude shift, C-field, Rabi pulling, microwave spectral purity, and modulation distortion. The design is microprocessor-based, with automatic lock-up and long term operation without operator intervention. The basic architecture and algorithms are covered, as well as the design considerations necessary to limit error contributions due to electronics effects to the level of a few parts in 10/sup 14/. Frequency standards using the new electronics demonstrate the expected stability and accuracy improvements. >
TL;DR: In this paper, the authors assess the thermal conductivity of CVD diamond materials and the variation of thermal conductivities with temperature and between and within different samples, based on published analyses of heat spreading in appropriate geometries.
TL;DR: With recent developments in the field of BiCMOS, it is anticipated that the authors have a technology which will provide a transition to the next century.
Abstract: Integrated electronic circuits which are based on complementary metal-oxide-semiconductor (CMOS) technologies are firmly established in modern electronics. CMOS provides the important characteristics needed for high-density logic designs. Moreover, with recent developments in the field of BiCMOS, it is anticipated that we have a technology which will provide a transition to the next century.
TL;DR: In this paper, the basic principles underlying power/speed improvement including charge-buffering, DC/AC-coupled active pull-down schemes, and complementary push-pull approaches are examined.
Abstract: Advances in high-speed, low-power bipolar circuits aimed at achieving superior power-delay performance and load-driving capability over conventional ECL and NTL circuits are reviewed. The basic principles underlying power/speed improvement including charge-buffering, DC/AC-coupled active pull-down schemes, and complementary push-pull approaches, are examined. The utilization and combination of these basic principles to form various high-speed, low-power circuits in both n-p-n-only and complementary circuit configurations and the design tradeoffs of these circuits are discussed. >
TL;DR: It is now technically feasible to produce silicon integrated circuits with 100% single-wafer processing and in the next decade, it may also become economically feasible to do so.
Abstract: It is pointed out that one of the most significant trends in semiconductor manufacturing over the past three decades has been the gradual replacement of batch processing with single-wafer processing. Two other trends, the use of larger silicon wafers (to reduce manufacturing cost) and the necessity for more demanding process-performance specifications (to allow continued device circuit scaling), have driven this move to single-wafer equipment for many processes. It is now technically feasible to produce silicon integrated circuits with 100% single-wafer processing. In the next decade, it may also become economically feasible to do so. >
TL;DR: The authors present several basic techniques to design low-power and high-speed ASIC's based on the need to design as simple circuits as possible, and these techniques are capable of providing high- Speed chips and low- power chips for portable electronics or DSP applications.
Abstract: The authors present several basic techniques to design low-power and high-speed ASIC's. They are based on the need to design as simple circuits as possible. The same techniques are therefore capable of providing high-speed chips and low-power chips for portable electronics or DSP applications. The topics covered include: architectures of RISC, parallel and multitask type; layout techniques; schematic optimisation; and branch-based layout. >
TL;DR: In this paper, a translating wedge is drawn into a forced fit between the heat generating module and a conducting wedge which contacts the electronics case, resulting in a high efficiency conducting thermal path from the electronics to the equipment case.
Abstract: A device for dissipating heat from cased electronics where optimum heat tsfer is required, and where easy removability is desired The device finds utility in sonobuoys, buoys, missiles and mines, as well as cabling electronics such as transoceanic communications equipment The device contains a translating wedge which is drawn into a forced fit between the heat generating module and a conducting wedge which contacts the electronics case, resulting in a high efficiency conducting thermal path from the electronics to the equipment case The device is particularly efficate in circular cased electronics
TL;DR: In this paper, the authors propose a protection means for personal computers which at machine level and independently of the operating system protects the personal computer and the software and information situated thereon against unauthorized use, irrespective of the fact of whether this personal computer is used as stand-alone device or whether it is incorporated in a data communication network.
Abstract: The invention relates to a protection means for personal computers which at machine level and independently of the operating system protects the personal computer and the software and information situated thereon against unauthorized use, irrespective of the fact of whether this personal computer is used as stand-alone device or whether this personal computer is incorporated in a data communication network. The protection means consists on the one hand of an electronics board provided with printed circuits and electronic circuits consisting of ICs (integrated circuits) and electronics related thereto which together form a plug-in card which is provided with contact surfaces for input and output of information, and on the other hand of software which is stored in information carriers which per se form a component of the electronics on the plug-in card, with the object of granting access to the personal computer and the information stored thereon as well as the coding and decoding of this information after the specific conditions for obtaining access have been fulfilled.
TL;DR: A hybrid analog and digital RPS system implemented with custom ASICs is proposed, which greatly reduces the total number of components and interconnections in the RPS to further increase system reliability.
Abstract: Implementing reactor protection systems (RPS) or other engineering safeguard systems with application specific integrated circuits (ASICs) offers significant advantages over conventional analog or software based RPSs. Conventional analog RPSs suffer from setpoints drifts and large numbers of discrete analog electronics, hardware logic, and relays which reduce reliability because of the large number of potential failures of components or interconnections. To resolve problems associated with conventional discrete RPSs and proposed software based RPS systems, a hybrid analog and digital RPS system implemented with custom ASICs is proposed. The actual design of the ASIC RPS resembles a software based RPS but the programmable software portion of each channel is implemented in a fixed digital logic design including any input variable computations. Set point drifts are zero as in proposed software systems, but the verification and validation of the computations is made easier since the computational logic an be exhaustively tested. The functionality is assured fixed because there can be no future changes to the ASIC without redesign and fabrication. Subtle error conditions caused by out of order evaluation or time dependent evaluation of system variables against protection criteria are eliminated by implementing all evaluation computations in parallel for simultaneous results. On- chipmore » redundancy within each RPS channel and continuous self-testing of all channels provided enhanced assurance that a particular channel is available and faults are identified as soon as possible for corrective actions. The use of highly integrated ASICs to implement channel electronics rather than the use of discrete electronics greatly reduces the total number of components and interconnections in the RPS to further increase system reliability. A prototype ASIC RPS channel design and the design environment used for ASIC RPS systems design is discussed.« less
TL;DR: In this article, the development of silicon carbide (SiC) as a semiconductor is briefly reviewed, showing great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail.
Abstract: Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.
TL;DR: A variety of devices with promising characteristics have recently been demonstrated that confirm the potential for 6H-SiC as discussed by the authors, including optoelectronics, high temperature electronics, radiation hard electronics, and high power/high frequency devices.
Abstract: A variety of devices with promising characteristics have recently been demonstrated that confirm the potential for 6H-SiC. There are four primary application areas for 6H-SiC devices: 1) optoelectronics, 2) high temperature electronics, 3) radiation hard electronics, and 4) high power/high frequency devices. Optoelectronic devices include blue light emitting diodes and UV photodiodes. High temperature devices cover almost any device in SiC, from pn junctions to FET-based integrated circuitry. Radiation hard and EMP hard 6H-SiC devices can greatly improve the survivability of military systems and enhance nuclear reactor electronics. High power and high frequency devices in 6H-SiC can increase the power density of solid state devices by at least a factor of four over what is currently available and can also increase the operating temperature of these devices.