Abstract: Semiconductor Electronics. Silicon Technology. Metal--Semiconductor Contacts. pn Junctions. Currents in pn Junctions. Bipolar Transistors I: Basic Properties. Bipolar Transistors II: Limitations and Models. Properties of the Metal--Oxide--Silicon System. Mos Field--Effect Transistors I: Physical Effects and Models. Mos Field--Effect Transistors II: High--Field Effects. Answers to Selected Problems. Selected List of Symbols. Index.

Abstract: Electrooptic sampling has been shown to be a very powerful technique for making time-domain measurements of fast electronic devices and circuits. Previous embodiments relied on a hybrid connection between the device under test and a transmission line deposited on an electrooptic substrate such as LiTaO 3 . The hybrid nature of this approach leads to device packaging difficulties and can result in measurement inaccuracies and performance degradation at very high frequencies. Since GaAs is electrooptic and an attractive material for high speed devices, we have devised an approach of direct electrooptic sampling of voltage waveforms in the host semiconductor. In this paper, we review the principles and limitations of electrooptic sampling and discuss this new noninvasive technique for electronic probing with applications to characterizing high speed GaAs circuits and devices.

Abstract: A treatment of the principles of power electronics, this text covers the high-power circuits associated with thyristorised power controllers and the low-power electronic control circuitry vital to the operation of a practical system. A special feature of the book is its detailed presentation of gating and control circuits associated with each type of converter.

Abstract: Designing high quality products at low cost is an economic and technological challenge to the engineer. A systematic and efficient way to meet this challenge is a new method of design optimization for performance, quality, and cost. The method, called “robust design,” has been found effective in many areas of engineering design. In this paper, the basic concepts of robust design will be discussed and two applications will be described in detail. The first application illustrates how, with a very small number of experiments, highly valuable information can be obtained about a large number of variables for improving the life of router bits used for cutting printed wiring boards from panels. The second application shows the optimization of a differential operational amplifier circuit to minimize the dc offset voltage by moving the center point of the design, which does not add to the cost of making the circuit.

Abstract: This book presents the papers given at a conference on thermal conduction in electronic components. Topics considered at the conference included an historical overview of electronics thermal control, heat pipes and immersion cooling of microelectronics, the direct air cooling of electronic components (empirical studies), the numerical analysis of air-cooled electronic components, and the thermal analysis of multichip modules and electronic components.

Abstract: As the semiconductor industry continues to scale down the feature sizes in VLSI digital circuits, soft errors will eventually limit the reliability of these circuits. An important source of these errors will be the products of radioactive decay. It is proposed to combat these transient errors by a new technique called soft-error filtering (SEF). This is based on filtering the input to every latch in the VLSI circuit, thereby preventing these transients, generated by alpha particle hits in the combinational section, from being latched in the corresponding registers. Several approaches to the problem of designing filtering latches are compared. This comparison demonstrates the superiority of a double-filter realization. The design for a CMOS implementation of the double-filter latch is presented. Not only is the design simple and efficient, but it can be expected to be tolerant to process variations. A comparison of SEF with conventional techniques for dealing with soft errors shows the former to be generally much more attractive, from the point of view of both area and time overhead.

Abstract: Some fundamental considerations regarding power electronics and machine electronics are discussed. The historical development of ideas in this field is examined, the applications in the field of electric traction for rail vehicles are summarised and possible future developments are outlined. A systematic approach to power electronics, based upon the control of energy flow in switching convertors, is presented. This approach takes into consideration the different possible switching functions, the modulation functions, the realisation of these switching and modulation functions, the realisation of these switching and modulation functions by practical power semiconductor switches and the different classes of forced turn-off and commutation in power electronic circuits. Subsequently the concepts of topology and structure are defined, leading to different generic topologies for singular convertors. The structure of the five different families of composite convertors are examined, and practical examples are given. The systematic approach to machine electronics presented in the paper is based on a power flow model, using the unifying concept of rotating field theory. In combination with previously defined systematics for power electronics, this enables a systematic approach to the different classes of variable speed drives, based on power flow considerations. The historical developments of some power electronic and machine electronic ideas are traced, starting at the beginning of this century. Since the introduction of power semiconductor switches, applications of the older ideas have increased exponentially in all fields, making it impossible to cover all of them. As a consequence the development of power electronics and control of machines by electronic convertors in the field of electric traction is discussed in some detail, because this represents a record of important engineering achievements in this field. In conclusion, the present state and future trends of power and machine electronics are examined. This evaluation covers the development in the field of switching devices regarding the improvement of interfacing between signal and power electronics, the decrease of switching transition times, the reduction of device losses during conduction, and device developments for decreasing energy storage devices in convertors. The development of power electronic convertors for the reduction of the number of components in the topology and the development of convertors with a high frequency link are then covered, related to the expected development of switching devices. New directions of development regarding the electronic conditioning of the electromechanical energy conversion process concerning the elimination of undesirable effects and losses are important. The implementation of these trends by utilising the improved switching characteristics of power electronic switches and the information processing capability of microprocessors is discussed. This is then extended toward control aspects, where both these characteristics enable solutions not possible hitherto. Field control of AC machines imparts control characteristics equal to, or better than, those obtainable with DC machines to the systems, while the processing capability of microprocessors allows the configuration of adaptive machine electronic systems. Finally attention is given to the interfacing of power electronic and machine electronic systems to the power supply network. If the exponential growth of the installed capacity of equipment in the future is to be handled, active compensation of the distorted currents drawn from the supply by this equipment will have to be considered seriously.

Abstract: An overview of semiconductor-based and superconductor-based low-temperature electronics is presented. The general issues of reliability and thermal expansion mismatch are discussed. The discussion of semiconductor electronics starts with a description of a cryogenic supercomputer, the ETA, and then covers devices and materials, noise and applications to signal processing for sensors. Superconductor electronics is then discussed, including signal processing, digital systems, and oscillating junctions. The success of electronics with small numbers of Josephson junctions and the outlook for higher-temperature operation are addressed. Hybrid applications, combining semiconductor and superconductor technologies at the device, circuit, or system level, are examined, highlighting the problems of electrical interfacing and interconnections. >

Abstract: A brief overview of developments in power and high-voltage integrated circuits is presented. The technology can be classified into two types: 1) smart power devices that contain one or more common drain, vertical power transistors with control, and protective circuitry built on the same chip, and 2) high-voltage integrated circuits that combine lateral high-voltage with CMOS logic and analog bipolar circuits on the same chip. These technologies are being aimed at display drivers, telecommunications, motor drives, power supplies, and automotive electronics. A rapid growth in their application in the future can be expected.

Abstract: The paper gives a survey of the major commercial applications of soft magnetic metallic glasses in the field of electronics. Topics discussed in detail are current applications such as magnetic heads for audio and video recorders, magnetic cores with low losses and specifically designed hysteris loops for inductive components in switched-mode power supplies, robust and reliable magnetometers, theft detection devices and sensitive displacement or torque transducers.

Abstract: MATHEMATICS: Units and Constants Formulas Used in Engineering PROPERTIES OF MATERIALS: Insulating and Dielectric Materials COMPONENTS: Active Lumped Circuit Elements Microwave Devices PASSIVE CIRCUITS: Passive Filters Computer-Aided Circuit Analysis Active Circuits DIGITAL CIRCUITS: Flip-Flops and Registers SYSTEMS ENGINEERING, AUTOMATIC CONTROL AND MEASUREMENTS: Automatic Control Robotics MEDICAL APPLICATIONS OF ELECTRONICS: Introduction to Human Physiology Patient Monitoring SOUND AND VIDEO RECORDING AND REPRODUCTION: Audio Recording and Playback Communications Techniques RANGING, NAVIGATION AND LANDING SYSTEMS: Radar COMPUTERS: Data Structures Memory Systems Computers Communication Networks ENERGY ENGINEERING: Energy Management Index.

Abstract: The radar, electronic warfare and communications industries will benefit from the recent development of a new family of coupled-cavity traveling wave tubes The new tubes, given the generic name of MILLITRONS can now provide these industries with affordable and available devices for high power millimeter wave transmitters Conventional techniques for manufacturing coupled-cavity traveling wave tubes become impractical for millimeter wave frequencies because of extremely tight tolerances The ladder is a new circuit which eliminates cumulative errors of stacked tubes by a method of simultaneously machining cavities of a circuit The MILLITRON uniquely incorporates ladder technology in the development of millimeter wave devices A recent accomplishment is a 100 W CW coupled-cavity traveling wave tube operating from 80 to 100 GHz

Abstract: An infrared focal plane module as disclosed for interfacing a plurality of detector elements to external electronics. The module comprises a plurality of integrated circuits disposed in substantially overlapping registry to form a module body, each of the integrated circuits is formed to include a layer of semi-conductive material such as silicon disposed upon a major surface of an insulating substrate, e.g. sapphire, to form electronic circuits. Each of the integrated circuits further includes conductive areas formed along first and second edge portions of the substrate to communicate electrical signals to and from the integrated circuit.

Abstract: The paper reviews some of the typical features and problems associated with modeling and control of power electronic circuits, and highlights various questions in power electronics that may be usefully examined from the viewpoint of control theory.

Abstract: Integrated circuit technology continues to evolve at a rapid pace, driven by the requirements of new applications for electronics of higher performance at ever lower cost. The attributes of CMOS technology in a ULSI environment are an ideal match to these requirements; thus CMOS is becoming the ubiquitous integrated circuit technology. The main feature of CMOS is the existence of complementary n- and p-channel transistors, which results in circuit configurations with virtually zero steady-state current, and consequently low power dissipation. Although CMOS is conceptually a circuit technology, this has implications for fabrication and layout, as well as for functional partitioning in the circuit design environment and test. These considerations are reviewed with special attention to those areas, such as test, latchup, and the design environment, where technical problems are substantial.

Abstract: For more than a decade after the invention of the transistor in 1948, all semiconductor circuits consisted of discrete devices either connected by wires or mounted on printed circuit boards. Such circuits offered tremendous advantages over the vacuum‐tube circuits that they replaced: less power consumption, higher speed, higher reliability, lower cost, less weight and smaller size. In 1958–59, a major technological breakthrough led to the realization of all these advantages for a second time: Working independently, Jack S. Kilby, an engineer at Texas Instruments, and Robert N. Noyce, a scientist at Fairchild, showed how one could form interconnected transistors, diodes, resistors, capacitors and other active and passive components on a single piece of silicon. The resulting “integrated circuits” have revolutionized electronics ranging from radio to computers, and a decade ago these circuits surpassed discrete devices in use by the microelectronics industry. In recognition of their invention, the National ...

Abstract: 1 IntroductionPart I*Linear Electric Circuits2 Circuit Elements and Laws3 Analysis Techniques for Resistive Circuits4 The Energy Storage Elements5 AC Circuits6 TransientsPart II*Electronic Circuits7 Diodes8 Transistors and Amplifiers9 The Operational Amplifier10 Digital Electronic CircuitsPart III*Electric Power and Machines11 Polyphase Circuits12 Magnetic Circuits13 Transformers14 DC Machines15 Synchronous Machines16 Induction Motors17 Small AC Motors18 Electric Power SystemsPart IV*Control and Instrumentation19 Feedback Control Systems20 Electrical InstrumentationPart V*Digital Circuits and Systems21 Digital Logic Circuits22 Digital SystemsAppendixesA Unit ConversionB Fourier SeriesC LaPlace TransformsAnswers to ProblemsIndex

Abstract: A POWER IC embodying a vertical power MOSFET and high-voltage and low-voltage CMOS stages will be reported. Figure 1 shows the block diagram of the power IC. Its output stage is a vertical N-channel MOSFET. In the interest of safety and corrosion resistance essential in automative electronics the chip must be designed as a high-side switch; i.e., the loads, involving lamps, motors, solenoid valves, etc., are grounded. Thug the chip operates in an emitter-follower configuration. To ensure full turnon of the MOSFET, the source voltage level should approach the battery voltage as closely as possible; the voltage across the gate must exceed the battery voltage by at least 7V.

Abstract: When silicon replaced germanium in the early 1960's as the semiconductor of choice for solid state devices, it converted the entire industry in just a few years because of two important characteristics. First, silicon has a higher energy bandgap, which permits silicon-based devices to operate over a wider temperature range (a feature especially important to the military). Second, and more important, silicon has a native oxide that provided for improved stability and planar, rather than mesa, type devices. Planar technology soon spawned integrated circuits. The integrated circuit in turn brought on the electronics revolution, allowing the complexity of circuits to increase by a factor of two every year (Moore's Law) and bringing us from single transistors to megabit memory chips.

Abstract: A low-current (5-A) push-button hybrid switch is described that combines mechanical contacts and electronics to extend contact life and improve switching performance. The switch is a two-wire type and makes use of three contacts that are opened and closed in sequence. This structure provides virtually arcless switching while minimizing the number of electronic components required. The electronics, consisting of a thyristor and other control circuitry, makes and breaks the circuit, providing zero-voltage turn on and zero-current turn off. It is powered directly by the voltage across the switch and requires no external Power supply. The contacts isolate the electronics from the line, initiate the control electronics, and provide a steady-state conduction path for the current (bypassing the electronics). The arc transfer process is examined for the short arc times observed, as is the contact erosion versus the number of switch operations for both normal and "short delay" operations, and pip and crater formation on the contacts. The inverse relationship between the mechanical and electronic complexity of hybrid switches is examined. Multiple contact arrangements for obtaining the desired functions with a minimal amount of electronics are discussed.

Abstract: Lithography plays a central role in the fabrication of electronic devices, and is essential in the preparation of samples for studies of transport in 1-D. The minimum feature size required in the device is important in the choice of lithographic method. Generally for linewidths above 1μm 1inewidth optical lithography is used whilst for smaller dimensions it is necessary to use electron, ion beam or X-ray lithography. The linewidths in current production VLSI circuits range between 1 and 3μm; there are programs in the U.S and the U.K to reduce the linewidth to 0.5μm over the next few years [1]. Single conventional semiconducting electronic devices have been made with gates as small as O.1μm, and some experimental superconducting devices employ features with sizes in the 10–30nm range.