Abstract: Digital electronics at gigabit-per-second data rates is emerging as a new branch of science and engineering. A particular field of application opens up in advanced radar and sensing systems where large amounts of data have to be dealt with in real time. Analog-to-digital (A/D) converters with microwave sampling rates and multipliers for high-data-yield processing are specifically required subcircuits. In communications, special 1 to 2 Gbit/s systems have been developed, but a further commercial need develops in domestic satellite links and in fiber-optical communications with its potential high bandwidth capabilities. Corresponding gigabit measuring and test instrumentation is required and being implemented. Gigabit circuitry has so far mainly been realized in hybrid-integrated technology. However, the full use of modern technological tools now allows for the fabrication of gigabit monolithic integrated circuits (IC's), with circuits up to 4 Gbit/s implemented. In circuit design, specific problems must be solved which are due to the involved wide bandwidths at microwave spectral frequencies. High packing density is required for low interconnection delay, but power dissipation leads to limitations. Gigabit electronics is based on devices with switching speeds in the range of a few hundred picoseconds and lower. Besides pin diodes and Schottky diodes, transistors are investigated at first. While the Si bi-polar has been improved, it is the GaAs MESFET and the GaAs junction FET which excel in speed, with LSI capabilities. Very recently, a considerable speed improvement was reported for Si n-MOSFET's. Unique properties for gigabit logic are shown by transferred-electron devices. However, the lead with regard to high speed and low power have Josephson junctions of the in-line junction and of the interferometer types. The present phase of rapid gigabit IC development, with expected LSI circuits in the 2 to 5 Gbit/s range and MSI circuits up to 15 Gbit/s, will stimulate further applications.

Abstract: Extensive characterizations of discrete devices and integrated circuits are reported over the temperature range from room temperature to 250°C and 300°C. These are the initial results of a Navy program for the evaluation and design of solid-state electronics to be operated uncooled in aircraft-engine control applications. Based on these results and results from earlier investigations, discrete semiconductor devices of essentially all generic types function with usable characteristics at junction temperatures up to at least 300°C. First-order device parameter changes result from increased leakage, reduced mobility, and increased resistivity. Both analog and digital integrated circuits were found to exhibit dc as well as useful dynamic characteristics up to temperatures near 250°C. Bipolar circuits with either junction or dielectric isolation degrade due to changes in device operating points and high leakage currents. In analog circuits the temperature capabiity is found to depend critically on the specific circuit design implemented. For a variety of CMOS devices tested a pnpn latchup mechanism between the p-channel transistor and the input protection network limits useful device operation to 260°C. Changes in device and circuit layout are needed to circumvent this failure mode. No fundamental barrier to 300°C functionality of integrated circuits (designed specifically for high-temperature application) was found.

Abstract: Semiconductors junction diodes power supplies junction transistors introduction to small-signal amplifiers more about small-signal amplifiers operational amplifiers amplifier troubleshooting oscillators radio receivers linear integrated circuits electronic control devices and circuits regulated power supplies.

Abstract: A microcomputer controls a ribbon drive assembly in a high speed wire matrix printer to eliminte ribbon slack, to insure proper ribbon positioning and to conduct diagnostics in conjunction with turning on the printer such as start-up time each day and after replacement of the ribbon with a new ribbon, the diagnostics checking to be sure that a ribbon is actually in the proper position, that it is threaded across the print line and also checking for proper operation of the ribbon drive, logic, and electronics. Tests are also made for proper ribbon drive during normal ribbon feeding operations.

Abstract: Surge voltages in ac power circuits become more significant with the increased application of miniaturized electronics in consumer and industrial products. A Working Group of IEEE has prepared a Guide describing the nature of these surges in ac power circuits up to 600 V, and is currently developing an Application Guide for using the environmental data defined in the Guide to improve protection. The Guide proposes two waveforms, one oscillatory, the other unidirectional, depending on the location within the power system. It also includes recommendations for source impedance or short-circuit current. This paper describes the data base and approach used by the Working Group and the recommendations proposed to represent typical surges, in order to obtain feedback for writing the Application Guide.

Abstract: OF THE DISCLOSURE A mounting structure for boards that can be equipped with electronic devices has structurally identical, adjacent frames, which are linked to each other on right angle lugs and can be flipped open like the pages of a book.

Abstract: Pressure Tolerant Electronics (PTE) is the technique of submitting electronic components to the full ambient pressure of the ocean by packaging them in a thin-walled housing filled with oil. Several PTE systems have been fabricated at the Naval Ocean System Center, including amplifiers, signal processing subassemblies, power control systems, command and control subsystems, and a television camera. Two of these systems will be described-one an acoustic imaging system, the other a command and control system for a submersible tools system called the Work Systems Package. The strategies for selecting components, developing circuits, testing, and maintaining of PTE systems as well as when to use and when not to use PTE systems will be presented using these two systems as examples.

Abstract: Apparatus for supervising the operation of a rotary machine such as a heat engine driving an electric generator, pump, etc., includes electronic circuits responsive to the alternating output of a tachometer-type alternator for recording performance details, such as speed, running hours, running hours in excess of normal speed, running hours with improper parameters (oil or water pressure or temperature), these electronic circuits being powered by rectifying the alternator output.

Abstract: A system of 19 large drift chambers has been built and used in an experiment in the FNAL muon beam. The design of the chambers and electronics enabled the system to perform with incident particle rates of up to 107 per second.

Abstract: Basic concepts electrical quantities and units basic circuits, laws and measurements circuit components multiple-load circuits complex-circuit analysis magnetism and electromagnetism alternating current and voltage power in AC circuits capacitance inductance transformers R, C and L circuits electric motors instruments and measurements.

Abstract: Applications of the Nonlinear Circuit Analysis Program NCAP to calculate RFI effects in electronic circuits containing discrete semiconductor devices and small scale linear bipolar integrated circuits (differential pairs) have been reported upon previously. The objective of this paper is to demonstrate that the computer program NCAP can also be used to calculate RFI effects in linear bipolar integrated circuits (ICs) of greater complexity. The IC reported upon is the μA741 operational amplifier (op amp) which is one of the most widely used ICs. The μA741 op amp was used as the active component in a unity gain buffer amplifier. The computer program NCAP was used to predict how amplitude modulated RF signals are demodulated in the op amp to cause undesired low frequency responses. The predicted and measured results for RF frequencies in the .050 to 100 MHz range are in good agreement. Contained in the paper is a complete set of NCAP parameter values for all the transistors in the μA741 op amp. These parameter values may be used as typical data for similar transistors in other bipolar integrated circuits.

Abstract: ELECTRONICS ASSEMBLY EVALUATOR ABSTRACT An electronics assembly evaluator for evaluating the skill and knowledge of a prospective electronics assembler. The evaluator provides the assembler with considerable amount of work to perform in the fabrica-tion of a test circuit and a wire harness while main-taining a completely safe electrical environment inde-pendent of the work performed by the assembler. The evaluator includes means for determining the accuracy as well as the quality of the work performed.

Abstract: This paper presents a method of studying RLC circuits with the help of the oscilloscope in the XYZ mode, complemented by an electronic device which generates a marker‐trace on the screen and which is used to measure frequencies without needing any reference point on the screen. Although the electronic device can be used in a fairly quantitative manner, the authors have proved its special utility in the teaching of electric resonance, since it shows the phenomena associated with electric resonance in a very intuitive way.

Abstract: During the past decade, ultrasonic medical diagnostic instruments have advanced significantly as a result of the resourceful application of electronic-system and acoustic-transducer designs to the problem of noninvasive information acquisition from clinical patients. These advancements are reviewed, with emphasis on the electronic technology by which they were achieved. Current instruments that enable imaging through real-time scanning and gray-scale display are described. It is predicted that future ultrasonic diagnostic instruments will be based on increasingly sophisticated integrated electronic technology that should greatly enhance the imaging performance of these systems; it should also provide the foundation for ultrasonic imaging instruments that will extend the state of the art in quantitative analysis and diagnosis through doppler processing. This growing technology most likely will include 1) high-current DMOS multiplexer transmit/ receive switches, 2) precision preamplifier array circuits, 3) advanced beamsteer/focus delay lines, 4) multielement integrated transducer arrays, and 5) Doppler-processing integrated circuits.

Abstract: The impacts of VLSI on the field of consumer electronics are briefly discussed. VLSI devices and process technology are considered to have a realistic influence on the future of consumer electronics, mainly through digital signal processing and the application of microprocessors.

Abstract: Impact on corrosion testing technology of improved and miniaturized circuitry developed by the electronics component industry is described. Parts lists, component identifications, and circuit diagrams are given which can be used to construct inexpensive devices for corrosion tests. Devices which can be made include potentiostats, power sources, zero resistance ammeters, and buffer amplifiers. Special attention is paid to corrosion monitoring applications and miniaturized impressed current integrated units for cathodic protection suitable for use in places where space is limited.

Abstract: Crucial to the design of digital switching systems for local switching applications is the line circuit interface. It forms the boundary between the analog, 2-wire, subscriber loop, with its attendant environment hostile to low-voltage electronics, and the digital logic environment. ITT North's DSS uses a Quad Line Circuit (QLC) that provides the line circuit interface between four subscriber loops and two PCM multiplexed highways. The QLC contains per-line elements consisting of an electronic 2W/4W hybrid, transmit and receive PCM filters, a codec, two card-mounted relays, and distributed logic for various gating and clocking functions. In addition, there is digital logic common to all four lines for interfacing with redundant microprocessors common to 320 lines. Design of the QLC in a dynamic technology evolution is discussed, and several evolutions of the initial design are presented.

Abstract: The successful evolution of III -V optical and electronic devices from laboratorycuriosities to production components has opened exciting new possibilities for vastlyimproved electronic and optical electronic systems. GaAs FETs and semiconductor laserscan now be commercially obtained from a number of companies in the United States and Japan.Researchers have recently demonstrated GaAs digital integrated circuits1 and CCDs2 that canreach speeds and low- powered dissipations that cannot be achieved with similar geometrysilicon devices. The complexity (i.e., number of active components) of these circuits israpidly growing. Laboratory GaAs circuits with - 100 gates have been demonstrated.An entirely new technology is now possible by combining the optical and electronic III -Vdevice technology to achieve monolithic integrated circuits. Vastly more complex andsuperior performance optical systems can be contemplated because the problem of interfacingoptical devices with control and signal processing circuitry can be eliminated. Possibleapplications of this technology will include: large arrays avalanche detectors; integratedmultichannel transmitters, receivers, and repeaters; optical A -D converters; two -dimensional ultrahigh sensitivity monolithic imaging focal planes; and a host of othersignal devices that can incorporate optical and electronic functions. This approach isfundamentally different from integrated optics where all the signal processing is donewith optical interactions. In monolithic ICs, both optical and electronic devices will beutilized on the same chip. The use of each type of device in combination will depend onthe particular requirements of a given system. The significance of this approach is notbeing limited to either a solely optical or electronic signal processing technique, butusing a combination of the two to achieve results superior to either alone.There are a number of unique characteristics of III -V alloys in general and ofGaA1As /GaAs in particular (compared to silicon) that allow the monolithic integration ofoptical and electronic functions on a single substrate. These characteristics include:

Abstract: The semiconductor industry's ability to make laboratory VLSI devices is no longer seriously doubted. What to do with those ICS is really the challenge.

Abstract: I feel that a very significant if not the most significant impact of computer technology in the next decade will be networks of independent processors dedicated to analyzing experimental data. It is unlikely that there will be a factor of ten increase in computer speed unless there are striking technological breakthroughs such as practical Josepheson junction gates. The semiconductor industry's emphasis appears to be more on extending the capacity and speed of microprocessors than on developing the chips for very fast main frame computers. However, by networking several computers together, it is possible to gain much more than a factor of ten in computing power.