Topic
Electrical junction
About: Electrical junction is a research topic. Over the lifetime, 956 publications have been published within this topic receiving 17015 citations.
Papers published on a yearly basis
1 / 2
Papers
TL;DR: The tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes in atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides.
Abstract: In heterostructures of the transition metal dichalcogenides MoS2 and WSe2, atomically thin p–n junctions are created that show gate-tunable rectifying and photovoltaic behaviour mediated by tunnelling-assisted interlayer recombination. Semiconductor p–n junctions are essential building blocks for electronic and optoelectronic devices1,2. In conventional p–n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p–n junction at the ultimate thickness limit3,4,5,6,7,8,9,10. Van der Waals junctions composed of p- and n-type semiconductors—each just one unit cell thick—are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions10,11,12. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p–n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p–n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p–n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p–n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.
2,293 citations
TL;DR: The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium, resulting in an admittance for a simple case varying as (1 + iωτ p )1/2 where τ p is the lifetime of a hole in the n-region.
Abstract: In a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτ p )1/2 where τ p is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.
2,094 citations
TL;DR: This study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping process.
Abstract: This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p–n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p–n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 1010 Jones, and light switching ratio of ∼103) and ideal rectifying behavior. The enhanced photoresponse and generation of open-circuit voltage (VOC) and short-circuit current (ISC) were understood to originate from the formation of a p–n junction after chemical doping. Due to the high photoresponse at low VD and VG attributed to its built-in potential, our MoS2 p–n diode made progress toward the realization of low-power operating photodevices. Thus, this study suggests an effective way to form a lateral p–n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping process.
598 citations
Book•
1 Oct 1991
TL;DR: In this article, a homogeneous semiconductor at equilibrium drift, diffusion, generation, recombination, trapping and tunneling metaloxide-semiconductor capacitor P/N and other junction diodes metal-oxide semiconductor and other field effect transistors bipolar junction transistor and other bipolar transistor devices.
Abstract: Electrons, bonds, bands and holes homogeneous semiconductor at equilibrium drift, diffusion, generation, recombination, trapping and tunneling metal-oxide-semiconductor capacitor P/N and other junction diodes metal-oxide-semiconductor and other field-effect transistors bipolar junction transistor and other bipolar transistor devices.
292 citations
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TL;DR: Gap junctions are essentially sieve-like structures that permit free diffusion through all the coupled cytoplasms, of low molecular weight, watersoluble components and are ubiquitous structures; all cells of metazoan animals appear to form these junctions, though in a few special cases they are lost in the terminal stages of differentiation.
Abstract: Intercellular communication is necessary in complex, differentiated organisms to coordinate the activities, differentiation and growth of the component cells. Two forms of cell-cell communication contribute to this coordination in metazoan animals. One form involves the secretion by cells of signal substances (e.g. neuro transmitters, hormones, growth factors) into the extracellular fluids. Target cells, which may be immediately adjacent or in some distant tissue, respond appropriately if they have the right receptors. The other form of communication operates within the limiting plasma membranes of groups of cells coupled into integrated units by specialized junctions. These junctions are essentially sieve-like structures that permit free diffusion through all the coupled cytoplasms, of low molecular weight, watersoluble components. They are ubiquitous structures; all cells of metazoan animals appear to form these junctions, though in a few special cases they are lost in the terminal stages of differentiation. From their appearance in electron micrographs, these structures have been termed gap junctions.
289 citations
Related Topics (5)
Performance Metrics
| Year | Papers |
|---|---|
| 2025 | 1 |
| 2024 | 1 |
| 2023 | 2 |
| 2022 | 3 |
| 2021 | 3 |
| 2020 | 15 |