TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.
Abstract: For certain p-n junctions, it has been observed that the measured current-voltage characteristics deviate from the ideal case of the diffusion model. It is the purpose of this paper to show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics. This phenomenon dominates in semiconductors with large energy gap, low lifetimes, and low resistivity. This model not only accounts for the nonsaturable reverse current, but also predicts an apparent exp (qV/nkT) dependence of the forward current in a p-n junction. The relative importance of the diffusion current outside the space charge layer and the recombination current inside the space charge layer also explains the increase of the emitter efficiency of silicon transistors with emitter current. A correlation of the theory with experiment indicates that the energy level of the centers is a few kT from the intrinsic Fermi level.
TL;DR: In this article, the authors used an Oceanic General Circulation Model (OGCM) to simulate these currents and estimate their transports, and a 11/2-layer reduced-gravity model to investigate the processes that force them.
TL;DR: In this article, the effects of the diffusion current on the three more important low-frequency dynamic characteristics (the short-circuit gate capacitance, the transconductance, and the drain conductance) are discussed.
Abstract: A qualitative discussion of the device operation is first given using three-dimensional energy band diagrams to show the significance of the diffusion current. The theoretical static I–V characteristics are the computed including both the diffusion and the drift currents, based on the one-dimensional and gradual channel model. Drain current saturation phenomena are evident in these exact solutions which are in good agreement with the calculations based on the bulk charge approximation and with the experimental data for the entire non-saturating and saturated ranges. The relative importance of the two current components along the length of the channel is illustrated. The effects of the diffusion current on the three more important low-frequency dynamic characteristics (the short-circuit gate capacitance, the transconductance, and the drain conductance) are discussed. The surface potential, the quasi-Fermi potential, the surface electric field and the surface carrier concentration along the channel are examined. The complete one-dimensional gradual channel model is inadequate to account for the large drain conductance observed in the saturation range, and it is shown that the electric field longitudinal to the channel current flow must be taken into account near the drain junction where it is larger than the transverse field due to the voltage applied to the gate electrode.
TL;DR: A physically realistic and general model for the vertical eddy viscosity in a homogeneous fluid is proposed in this article, where explicit expressions are given for the temporal development of the drift current in the vicinity of the free surface and for the steady-state response to a suddenly applied uniform shear stress.
Abstract: A physically realistic and general model for the vertical eddy viscosity in a homogeneous fluid is proposed. For an infinitely deep ocean the vertical eddy viscosity increases linearly with depth from a value of zero at the free surface. Based on this model a general theory is developed for the drift current resulting from a time-varying surface shear stress. Explicit expressions are given for the temporal development of the drift current in the vicinity of the free surface and for the steady-state response to a suddenly applied uniform shear stress. The steady-state solution predicts the effective Ekman layer depth to be proportional to the square root of the wind shear stress and reproduces the experimentally observed logarithmic velocity deficit near the free surface. The angle between the surface drift current and the wind stress is found to be somewhat smaller (of the order 10°) than predicted by Ekman's classical solution. For the unsteady response to a suddenly applied wind stress the pres...
TL;DR: In this paper, the authors quantified the influence of the freshwater influx, the wind forcing and the Indian Ocean monsoon drift current on the property distributions and the circulation in the Bay of Bengal during southwest monsoon.
Abstract: Influence of the freshwater influx, the wind forcing and the Indian Ocean monsoon drift current on the property distributions and the circulation in the Bay of Bengal during southwest monsoon has been quantified. At the head of the Bay, waters of low salinity, affectEd. by the freshwater influx, occupy the upper 90 m water column. The isohaline 34.0 x 10 sup(-3) separating these waters from those of underlying saline waters shoals southward gradually and outcrops around 14N, 10N and 6N in the western, central and southeastern regions of the Bay respectively. The wind-stress-curl-induced upwelling effect is confined to depth limits of 50-100 m as is supportEd. by a band of cold (24 degrees -19 degrees C) water in the central Bay. In the southern and central regions of the Bay, the monsoon drift current feeds the large cale cyclonic gyre apart from maintaining the northward boundary current in the eastern Bay. A warm (27 degrees -23 degrees C), saline (35.0-35.2 x 10 sup(-3)) watermass is advected northeastward along with the monsoon drift current into the Bay up to 14N at the depth limits of 50-100 m. Below this depth, in the western Bay a well-defined southward flow in the form of a boundary current is documented. Intense vertical mixing is inferred at the zones of salinity fronts in the depth limits of 40-100 m and also a deeper depths (2200 m) and elsewhere lateral mixing is predominant