Abstract: An integrated circuit device including a link point for electrically connecting a plurality of metal layers, comprising a first metal layer, a link insulating layer, a second metal layer and diffusion barrier layers between the link insulator layer and each of the first metal layer and the second metal layer. The metal layers are connected by exposing the link point to a low-power laser for a relatively long pulse width.

Abstract: An improved method for making polycide structures for use in electrode and wiring interconnection applications. It includes depositing a layer of polysilicon on an insulating layer and forming on this polysilicon layer a silicide structure and a silicon capping layer. The deposited layers are defined and etched through dry etching techniques using a dry etching mask made of a refractory metal that does not form a volatile halide in a dry etching environment. Metals with such characteristics include cobalt (Co), nickel (Ni), iron (Fe), and manganese (Mn). The metal mask and the other deposited layers may be formed and defined using a photoresist mask as a deposition mask formed to be compatible with lift-off techniques. The silicide may be deposited either through a chemical vapor deposition process or through evaporation techniques. If it is formed through the co-evaporation of metal and silicon, then the structure is subjected to a low temperature reaction annealing step at a temperature between 500° and 600° C. prior to dry etching. To avoid a diffusion of the metal mask into the silicon layer, during this low temperature annealing, the process provides for the formation of a diffusion barrier layer between the metal mask and the silicon layer. Following the removal of the metal mask and the diffusion barrier layer, the structure is annealed at a temperature sufficient to cause the homogenization of the silicide layer.

Abstract: Loss of phosphorus by evaporation, from doped polysilicon and SiO2 films, due to high temperature anneals has been investigated by use of neutron activation analysis technique. It is found that large amounts of phosphorus, as much as 99%, are lost from polysilicon films during inert ambient anneals. The loss is dependent on the temperature and time of anneal and on the initial phosphorus concentration. There is no loss in oxidizing ambients. For P‐glass films phosphorus is lost only from the top layers of the film. The top layer, when free of phosphorus, acts as diffusion barrier for further loss from underlying P glass. Also the maximum loss from P glass is ambient dependent, being ∼10% in oxygen, 20% in argon, and over 35% in steam. Mathematical modeling of the phosphorus out‐diffusion from polysilicon and P‐glass films is discussed.

Abstract: An evaluation of the processing of zirconium nitride and the usefulness of this nitride as a diffusion barrier between aluminum and silicon has been carried out. Reactive sputtering from an elemental zirconium target in a mixture of Ar/N2 makes it possible to change the nitrogen content in the deposited film. The composition variation with N2 concentration will be presented. Films have been prepared using rf‐diode reactive sputtering. The as‐deposited film resistivity dependence on bias voltage has also been studied. Zirconium deposited on silicon forms a silicide at 550–600 °C. We have found by Rutherford backscattering spectroscopy analysis that during this silicide formation on arsenic implanted silicon substrates, the arsenic is piled up at the silicon/silicide interface. This effect favors the formation of a low resistance Ohmic contact. Since the barrier height between the silicide and silicon is expected to be 0.55 eV we want to point out that this contact may be useful for both n‐ and p‐type regio...

Abstract: The diffusion barrier properties of titanium nitride between nickel silicide and aluminum have been investigated in NiSi Schottky contacts on silicon for annealing temperatures of 400–600°C. No interaction between the metals of the contact structure was detected by backscattering spectrometry, even at 600°C. The electron barrier height of Schottky diodes stays constant at ϕBn = 0.67 ± 0.01 upon thermal annealing in vacuum at 500°C for 2 h . The ideality factor is n = 1.01. After 4 h, ϕ Bn decreases by about 10 mV and n rises to 1.0 6. The diodes degrade after annealing at 550°C or 600°C for 30 min.

Abstract: OF THE DISCLOSURE An integrated semiconductor circuit including a substrate consisting of silicon having a heavily doped impurity layer formed thereon. An external contacting track level consisting of aluminum or aluminum alloy is connected to the contact regions by means of an intermediate layer consisting of tantalum silicide. The tantalum content of the compound is greater than that required stoichiometrically to produce the intermetallic compound TaSi2. The external contacting track level is preferably in the form of an aluminum or aluminum alloy-tantalum silicide double layer. The tantalum silicide layer simultaneously acts as a diffusion barrier and as a contacting material. The useful life of the electrical conducting paths under temperature and current loads as well as the reliability of the contacts is signi-ficantly increased in VLSI circuits as a result of this metallization.

Abstract: An electronic conductor and a method for manufacturing it are provided. The conductor is made of a base of substantially copper having a diffusion barrier on the base and a coating of tin-lead, or of tin, on the diffusion barrier. The diffusion barrier is either copper in combination with phosphorus, or copper in combination with boron. The method of manufacturing an electronic conductor applies the diffusion barrier to the base by means of an electro-deposition process and then applies the coating on the diffusion barrier.

Abstract: Using a high-resolution Auger microprobe the chemical structure of the interface in a SiC reinforced titanium alloy has been examined. Only two phases, TiC and Ti5Si3, are identified in the interface. A TiC layer next to the SiC fiber was proven to form a diffusion barrier for titanium. The results aid in the understanding of the fiber surface degradation process during sample production and suggests processes for the further development of these composites.

Abstract: A thermionic cathode (FIG. 1) comprises an emitter (3) comprising a matrix (4) of tungsten impregnated with an alkaline earth activator. The matrix is coated with a coating (5) of about 20-30% osmium fully alloyed with tungsten formed by cosputtering osmium and tungsten onto the matrix. A diffusion barrier (6) of osmium may be interposed between the matrix 4 and coating (5) (FIG. 2) and, optionally, osmium may be diffused into the matrix (4). Alternatively the whole matrix may comprise a mixture of about 20-30% osmium fully alloyed with tungsten (FIG. 3). Alternative to osmium and tungsten may be used, and various modifications may be made, and other methods of making the emitter may be used. In particular the proportion of osmium may be about 40%.

Abstract: A minimal corrosion resistor structure and deposition technique for superconductive circuits, with mutually protective niobium oxide passivation ring, gold corrosion barrier film and titanium resistive layer. Niobium has an intrinsic oxide of Nb2 O5, which must be removed from a contact area designated by an opening in photoresist; the development process leaves a photoresist overhang. The corrosion barrier film is deposited through the opening. The resistive metal layer is deposited over the corrosion barrier film through the same opening. The gold corrosion barrier film prevents the titanium resistive metal layer from making corrosive contact with the niobium. The titanium resistive metal layer encapsulates the gold corrosion barrier film to prevent diffusion between the gold and further layers to be deposited subsequently. It would normally be possible for the titanium to spill over the gold and make corrosive intimate contact with the niobium; a self-alignment technique prevents such contact. The gold corrosion barrier film is sharply focused to form an area corresponding to the opening in the photoresist. An unfocused plasma oxidation step, which follows the gold deposition, grows an extrinsic Nb2 O5 passivation ring about the gold. The titanium resistive metal is then deposited with a wider focus than that of the gold corrosion barrier film, through the same opening; the titanium resistive metal layer deposits over the edge of the gold, encapsulating the gold with a diffusion barrier.

Abstract: n integrated circuit has a fusible link structure (3) which comprises an alloy of platinum and silicon. The alloy comprises, by weight, approximately 23% silicon. Electrical connections to the fusible link are provided by a layer of aluminum (6) and a layer of an alloy of titanium and tungsten (5) wherein the titanium and tungsten alloy is disposed between the fusible link and the aluminum layer and serves as a diffusion barrier for preventing diffusion of the aluminum into the fusible link. The fusible link is deposited on a relatively thick dielectric layer (2) having the relatively low thermal conductivity of less than 14 milliwatts/cm 2 °C. Preferably, the dielectric layer is at least 2000A thick.

Abstract: The thermal stability of amorphous metal films is of prime importance in high temperature semiconductor device applications. Suitable thin film deposits of amorphous Ni-Nb, 58 at % Ni have been prepared by sputter deposition onto Si, GaAs, and GaP substrates. The amorphous character and crystallization behavior of the films have been monitored by x-ray diffraction (XRD). Polycrystalline Au and Ni overlayers were found to lower the NiNb crystallization temperature by about 100 and 150°C, respectively. In addition, Auger depth profiles were used to monitor the various interdiffusion reactions between the amorphous metal, polycrystalline metal overlayers and semiconductor substrates. For example, the feasibility of NiNb as a diffusion barrier between Au and a semiconductor substrate was found to depend on the substrate. Following a one hour 500°C anneal, very little interdiffusion was observed in the Au/NiNb/Si system. However on a GaAs or GaP substrate the Au and NiNb interdiffused extensively. These studies have demonstrated the viability of amorphous metal films as effective diffusion barriers in semiconductor contact applications, but emphasize the need for careful selection of compatible material combinations.

Abstract: We report on contacts to p-type GaAs formed by a GaAs/Pt/TiN/Ag system. Ohmic behavior in this system is believed to be accomplished by the solidstate reaction of Pt with GaAs. This reaction is confined by the TiN film which is thermally stable. In addition, the TiN film acts as an excellent diffusion barrier in preventing the intermixing of the top Ag layer with GaAs or Pt. Contacts formed with such controlled reaction have important implications for the stability of shallow p-n junction devices.

Abstract: Bei der Herstellung von Halbleiterschichtanordnungen ist der Verkleinerung der Feldoxidstrukturen durch die Lange des Dickoxidvogelschnabels eine Grenze gesetzt. In the manufacture of semiconductor layer arrangements of the reduction of the field oxide by the length of Dickoxidvogelschnabels there is a limit. Nach der Erfindung wird durch eine dunne Diffusionssperre aus Siliziumnitrid, die im gewunschten Temperaturbereich noch keine Kristallfehler erzeugt, die Oxidationsmitteldiffusion unterbunden. According to the invention, by a thin diffusion barrier made of silicon nitride, which still generates no crystal defects in the desired temperature range, prevented the oxidant diffusion. Durch Stickstoffimplantation und/oder spezielle Prozesfuhrung bei der Nitridabscheidung wird - falls erforderlich - auch das naturliche Oxid auf den Siliziumwafern in eine Diffusionssperre umgewandelt. and the native oxide is converted to the silicon wafers in a diffusion barrier - is by nitrogen implantation and / or special process procedure in the nitride deposition - if necessary.

Abstract: The paper reports experiments using thin coatings of TiC and TiN as diffusion barrier layers to avoid the unwanted interaction between W fibres and Ni matrix. The coatings were produced by the methods of chemical vapour deposition (CVD) and reactive sputtering. Diffusion annealings and mechanical tensile and fatigue tests at different temperatures were done on the composites in order to check the effect of the used diffusion barriers on the stability and strength properties of the composites. The results prove that the used barrier layers increase the stability and hinder the deleterious effects of interaction on the strength properties of Ni base composites reinforced with W fibres.