Showing papers on "Diffusion barrier published in 1972"
TL;DR: In this article, the interdiffusion and subsequent compound formation was investigated in thin film couples of Ti-Au, Ti-Pd, and Ti3Pt using transmission and glancing angle electron diffraction techniques.
Abstract: The interdiffusion and subsequent compound formation was investigated in thin film couples of Ti–Au, Ti–Pd, and Ti–Pt using transmission and glancing angle electron diffraction techniques. Aging temperatures up to 500°C and times up to 8 h were considered. For all three couples, intermetallic compound formation was observed in the as-deposited films indicating substantial diffusion during deposition (= 100–150°C). For the Ti–Au couples, the TiAu2, TiAu, and Ti3Au compounds formed during diffusion. For the Ti-Pd and Ti-Pt couples the isostructural compounds TiPd, TiPt and Ti3Pd, Ti3Pt were observed. After the formation of the Ti3Pd type compound diffusion ceased for temperatures <500°C indicating that this compound was acting as a diffusion barrier. In all cases Ti was found to be the fastest diffusing species, where it was observed that the diffusion occurred principally through the Au, Pd, or Pt grain boundaries. The effective diffusion coefficient was estimated to be about 105 times larger than expected...
154 citations
Patent•
25 Feb 1972TL;DR: In this paper, a composite article, comprising silicon carbide-containing reinforcing filaments in a titanium or titanium alloy matrix, is found to have increased strength when the filaments are initially provided with a thin coating of zirconium.
Abstract: A composite article, comprising silicon carbide-containing reinforcing filaments in a titanium or titanium alloy matrix, is found to have increased strength when the filaments are initially provided with a thin coating of zirconium. The zirconium acts as a barrier to interdiffusion of titanium and silicon carbide and prevents weakening of the composite structure which would otherwise result from such interdiffusion.
12 citations
Patent•
30 Oct 1972TL;DR: In this article, an insulating substrate is first coated with a film of tantalum and then either a layer of copper or two layers of copper separated by a diffusion barrier layer of iron, nickel or cobalt are applied by sputtering to metallize the surface.
Abstract: An insulating substrate is first coated with a film of tantalum. Then either a layer of copper or two layers of copper separated by a diffusion barrier layer of iron, nickel or cobalt are applied by sputtering to metallize the surface. With a photolithographic mask, the copper and tantalum are etched to bare the substrate. Then with a screen printed mask, the copper is selectively etched over resistor and capacitor regions, and the tantalum there is partially oxidized, the copper conductors and contact areas being protected. Solder is then applied to the copper, but does not stick to the oxide.
8 citations
TL;DR: The physical and chemical interaction processes in thin film arrangements are followed by different ageing phenomena which influence the stability of their physical parameters and determine the reliability of the electronic components existing of thin films as discussed by the authors.
Abstract: The physical and chemical interaction processes in thin film arrangements are followed by different ageing phenomena which influence the stability of their physical parameters These determine the reliability of the electronic components existing of thin films
On the base of own experimental investigations on tantalum and its oxides, beryllium oxide and tantalum-rhenium alloys technological aspects and the application of new materials for lowering the ageing intensity are considered
[Russian Text Ignored]
1 citations