TL;DR: Differential gain and large hysteresis have been seen in the transmission of a Fabry-Perot interferometer containing Na vapor irradiated by light from a cw dye laser.
Abstract: Differential gain and large hysteresis have been seen in the transmission of a Fabry-Perot interferometer containing Na vapor irradiated by light from a cw dye laser. Non-linear dispersion, neglected in earlier work, dominates over nonlinear absorption in Na. The apparatus uses only optical inputs and outputs. Similar apparatus may be useful as an optical amplifier, memory element, clipper, and limiter.
TL;DR: In this article, the authors developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include carrier transport effects on the high-speed properties of quantum-well lasers.
Abstract: Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that carrier transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in quantum-well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of carrier transport. >
TL;DR: In this article, the authors investigate theoretically a number of important issues related to the performance of AlGaAs quantum well (QW) semiconductor lasers, and reveal the existence of gain saturation with current in structures with a small number of wells, pointing to a possible two-fold increase in modulation bandwidth and a ten-fold decrease in the spectral laser linewidth in a thin QW laser compared to a conventional double heterostructure laser.
Abstract: We investigate theoretically a number of important issues related to the performance of AlGaAs quantum well (QW) semiconductor lasers. These include a basic derivation of the laser gain, the linewidth enhancement factor α, and the differential gain constant in single and multiple QW structures. The results reveal the existence of gain saturation with current in structures with a small number of wells. They also point to a possible two-fold increase in modulation bandwidth and a ten-fold decrease in the spectral laser linewidth in a thin QW laser compared to a conventional double heterostructure laser.
TL;DR: In this article, a tensile strain-induced heavy-hole-light hole reversal in the valence band was demonstrated using In/sub x/Ga/sub 1-x/As-InGaAsP quantum well devices.
Abstract: Improved performance of 1.5- mu m wavelength lasers and laser amplifiers using strained In/sub x/Ga/sub 1-x/As-InGaAsP quantum well devices is reported. The device structures fabricated to study the effects of strained quantum wells on their performance are described. These devices showed TM mode gain, demonstrating the strain-induced heavy-hole-light hole reversal in the valence band. Lasers using these tensile strained quantum wells show higher and narrower gain spectra and laser amplifiers have a higher differential gain compared to compressively strained quantum well devices. Consequently, the tensile strained quantum well lasers show the smallest linewidth enhancement factor alpha =1.5 (compression alpha =2.5) and the lowest K-factor of 0.22 ns (compression K=0.58 ns), resulting in an estimated intrinsic 3 dB modulation bandwidth of 40 GHz (compression 15 GHz). >
TL;DR: In this article, the authors used the concept of electronically-coupled quantum dots (QDs) and oxide-defined 10 μm apertures for surface-emitting QD lasers (300 K).