TL;DR: In this article, a modular and power-scalable architecture for low-power programmable frequency dividers is presented, which consists of a 17-bit UHF divider, an 18-bit L-band divider and a 12-bit reference divider.
Abstract: A truly modular and power-scalable architecture for low-power programmable frequency dividers is presented. The architecture was used in the realization of a family of low-power fully programmable divider circuits, which consists of a 17-bit UHF divider, an 18-bit L-band divider, and a 12-bit reference divider. Key circuits of the architecture are 2/3 divider cells, which share the same logic and the same circuit implementation. The current consumption of each cell can be determined with a simple power optimization procedure. The implementation of the 2/3 divider cells is presented, the power optimization procedure is described, and the input amplifiers are briefly discussed. The circuits were processed in a standard 0.35 /spl mu/m bulk CMOS technology, and work with a nominal supply voltage of 2.2 V. The power efficiency of the UHF divider is 0.77 GHz/mW, and of the L-band divider, 0.57 GHz/mW. The measured input sensitivity is >10 mV rms for the UHF divider, and >20 mV rms for the L-band divider.
TL;DR: In this article, it was shown that the current densities of Si and SOI n-channel MOSFETs are largely unchanged over technology nodes and foundries, and that the characteristic current density also remains invariant for the most common circuit topologies such as MOS-SiGe HBT cascodes, MOS CML gates, and nMOS transimpedance amplifiers (TIAs) with active pMOS FET loads.
Abstract: This paper provides evidence that, as a result of constant-field scaling, the peak fT (approx. 0.3 mA/mum), peak fMAX (approx. 0.2 mA/mum), and optimum noise figure NFMIN (approx. 0.15 mA/mum) current densities of Si and SOI n-channel MOSFETs are largely unchanged over technology nodes and foundries. It is demonstrated that the characteristic current densities also remain invariant for the most common circuit topologies such as MOSFET cascodes, MOS-SiGe HBT cascodes, current-mode logic (CML) gates, and nMOS transimpedance amplifiers (TIAs) with active pMOSFET loads. As a consequence, it is proposed that constant current-density biasing schemes be applied to MOSFET analog/mixed-signal/RF and high-speed digital circuit design. This will alleviate the problem of ever-diminishing effective gate voltages as CMOS is scaled below 90 nm, and will reduce the impact of statistical process variation, temperature and bias current variation on circuit performance. The second half of the paper illustrates that constant current-density biasing allows for the porting of SiGe BiCMOS cascode operational amplifiers, low-noise CMOS TIAs, and MOS-CML and BiCMOS-CML logic gates and output drivers between technology nodes and foundries, and even from bulk CMOS to SOI processes, with little or no redesign. Examples are provided of several record-setting circuits such as: 1) SiGe BiCMOS operational amplifiers with up to 37-GHz unity gain bandwidth; 2) a 2.5-V SiGe BiCMOS high-speed logic chip set consisting of 49-GHz retimer, 40-GHz TIAs, 80-GHz output driver with pre-emphasis and output swing control; and 3) 1-V 90-nm bulk and SOI CMOS TIAs with over 26-GHz bandwidth, less than 8-dB noise figure and operating at data rates up to 38.8 Gb/s. Such building blocks are required for the next generation of low-power 40-80 Gb/s wireline transceivers
TL;DR: A new reduced swing logic style called dynamic current mode logic (DyCML) that reduces both gate and interconnect power dissipation and is a good candidate for portable devices and battery-powered systems.
Abstract: This paper introduces a new reduced swing logic style called dynamic current mode logic (DyCML) that reduces both gate and interconnect power dissipation. DyCML circuits combine the advantages of MOS current mode logic (MCML) circuits with those of dynamic logic families to achieve high performance at a low-supply voltage with low-power dissipation. Unlike CML circuits, DyCML gates do not have a static current source, which makes DyCML a good candidate for portable devices and battery-powered systems. Simulation and test results show that DyCML circuits are superior to other logic styles in terms of power and delay. A 16-bit DyCML carry look-ahead adder (CLA), fabricated in 0.6-/spl mu/m CMOS technology, attains a delay of 1.24 ns and dissipates 19.2 mW at 400 MHz.
TL;DR: In this paper, a feedback MOS current mode logic (MCML) is proposed for high-speed operation of CMOS transistors, which is more tolerant to the threshold voltage fluctuation than the conventional MCML and is suitable for gigahertz operation of deep-submicron transistors.
Abstract: A feedback MOS current mode logic (MCML) is proposed for the high-speed operation of CMOS transistors. This logic is more tolerant to the threshold voltage fluctuation than the conventional MCML and is suitable for gigahertz operation of deep-submicron CMOS transistors. Using this logic, 8:1 multiplexer (MUX) and 1:8 demultiplexer (DEMUX) ICs for optical-fiber-link systems have been fabricated with 0.18-/spl mu/m CMOS transistors. The ICs are faster than conventional CMOS MUX and DEMUX ICs and their power consumption is less than 1/4 of that of the conventional 10-Gb/s MUX and DEMUX ICs made using Si bipolar or GaAs transistors.
TL;DR: This paper reviews several of the current-mode CMOS multiple-valued logic (MVL) circuits that have been studied over the past decade and their performance described.
Abstract: Current-mode CMOS circuits are receiving increasing attention. Current-mode CMOS multiple-valued logic circuits are interesting and may have applications in digital signal processing and computing. In this paper we review several of the current-mode CMOS multiple-valued logic (MVL) circuits that we have studied over the past decade. These circuits include a simple current threshold comparator, current-mode MVL encoders and decoders, current-mode quaternary threshold logic full adders (QFAs), current-mode MVL latches, current-mode latched QFA circuits, and current-mode analog-to-quaternary converter circuits. Each of these circuits is presented and its performance described. >