CMOS sensor

Abstract: Event-based dynamic vision sensors (DVSs) asynchronously report log intensity changes. Their high dynamic range, sub-ms latency and sparse output make them useful in applications such as robotics and real-time tracking. However they discard absolute intensity information which is useful for object recognition and classification. This paper presents a dynamic and active pixel vision sensor (DAVIS) which addresses this deficiency by outputting asynchronous DVS events and synchronous global shutter frames concurrently. The active pixel sensor (APS) circuits and the DVS circuits within a pixel share a single photodiode. Measurements from a 240×180 sensor array of 18.5 μm 2 pixels fabricated in a 0.18 μm 6M1P CMOS image sensor (CIS) technology show a dynamic range of 130 dB with 11% contrast detection threshold, minimum 3 μs latency, and 3.5% contrast matching for the DVS pathway; and a 51 dB dynamic range with 0.5% FPN for the APS readout.

Abstract: Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On-chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip.

Abstract: In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance, and specify several key performance measures. One of the most important advantages of CMOS image sensors over CCDs is the ability to integrate sensing with analog and digital processing down to the pixel level. Finally, we focus on recent developments and future research directions that are enabled by pixel-level processing, the applications of which promise to further improve CMOS image sensor performance and broaden their applicability beyond current markets.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.